IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
UL recognised, File No. E91231
IL* Package Code " GG "
ILD*/ILQ* Package Code " FF "
'X' SPECIFICATIONAPPROVALS
Add 'X' after part number
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
IL1
IL2
IL5
IL74
2.54
7.0
6.0
1.2
7.62
6.62
1
2
3
Dimensions in mm
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
DESCRIPTION
The IL*, ILD*, ILQ* series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
Three package types
High Current Transfer Ratio (50% min)
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
High BV
CEO
(70V min)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
APPLICATIONS
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
ILD1
ILD2
ILD5
ILD74
3.0
0.5
2.54
1
7.0
6.0
2
3
4
10.16
9.16
7.62
4.0
3.0
0.5
3.35
8
7
6
5
1.2
3.0
13°
Max
0.26
1
2
3
16
15
14
13
12
11
10
9
7.62
4.0
3.0
0.5
13°
Max
0.26
ILQ1
ILQ2
ILQ5
ILQ74
2.54
0.5
3.35
4
5
7.0
6.0
6
7
8
7.62
1.2
20.32
19.32
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
DB91088
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 125°C
Operating Temperature
-25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
IL1, ILD1, ILQ1, IL74, ILD74, ILQ74
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
MIN TYP MAX UNITS
1.2
1.65
10
V
μA
TEST CONDITION
I
F
= 50mA
V
R
= 4V
50mA
6V
70mW
70V
50V
6V
50mA
150mW
Output
70
50
6
50
V
V
V
nA
I
C
= 1mA , ( Note 2 )
I
C
= 1mA , ( Note 2 )
I
E
= 100μA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR) (Note 2)
IL1, ILD1, ILQ1
20
IL2, ILD2, ILQ2
100
IL5, ILD5, ILQ5
50
IL74, ILD74, ILQ74
12.5
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1
IL2, ILD2, ILQ2
IL5, ILD5, ILQ5
IL74, ILD74, ILQ74
12.5
Collector-emitter Saturation Voltage,V
CE (SAT)
Input to Output Isolation Voltage V
ISO
5300
Input to Output Isolation Voltage V
ISO
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
Output Fall Time
tf
300
500
400
%
%
%
%
%
%
%
%
V
V
RMS
V
PK
Ω
μs
μs
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
16mA I
F
, 5V V
CE
10mA I
F
, 0.4V V
CE
10mA I
F
, 0.4V V
CE
10mA I
F
, 0.4V V
CE
16mA I
F
, 0.5V V
CE
16mA I
F
, 2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
I
F
= 10mA
V
CC
= 5V, R
L
= 75Ω
75
170
100
0.4
2
2
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
17/7/08
DB91088m-AAS/A7
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
150
I
F
= 10mA
V
CE
= 0.4V
1.0
100
0.5
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
50
Forward current I
F
(mA)
Relative current transfer ratio
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1
2
V
CE
= 0.4V
T
A
= 25°C
5
10
20
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
V
CE
= 10V
T
A
= 25°C
Relative current transfer ratio
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
17/7/08
Relative current transfer ratio
I
F
= 10mA
V
CE
= 10V
10
20
50
Forward current I
F
(mA)
DB91088m-AAS/A7
嵌入式系统
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