Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBT5551
SILICON N–P–N HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT5551 = G1
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T
amb
= 25 °C
Junction temperature
Collector–emitter saturation voltage
I
C
= 50 mA; I
B
= 5 mA
D.C. current gain
I
C
= 10 mA; V
CE
= 5 V
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
V
CBO
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
max.
max.
max.
max
max.
max.
min.
180
160
600
250
150
V
V
mA
mW
°C
0.2 V
80
V
CBO
V
CEO
V
EBO
max.
max.
max.
180 V
160 V
6 V
Continental Device India Limited
Data Sheet
Page 1 of 3
CMBT5551
Collector current
Total power dissipation up to T
amb
= 25 °C
Junction temperature
Storage temperature range
THERMAL RESISTANCE
from junction to ambient
I
C
P
tot
T
j
T
stg
max.
600
max
250
max.
150
–55 to +150
mA
mW
°C
°C
R
th j–a
500
K/W
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector cut–off current
I
CBO
I
E
= 0; V
CB
= 120 V
I
CBO
I
E
= 0; V
CB
= 120 V; T
amb
= 100 °C
Emitter cut–off current
I
EBO
I
C
= 0; V
EB
= 4 V
Breakdown voltages
V
(BR)CEO
I
C
= 1 mA; I
B
= 0
V
(BR)CBO
I
C
= 100
µA;
I
E
= 0
V
(BR)EBO
I
C
= 0; I
E
= 10
µA
Saturation voltages
V
CEsat
I
C
= 10 mA; I
B
= 1 mA
V
BEsat
V
CEsat
I
C
= 50 mA; I
B
= 5 mA
V
BEsat
D.C. current gain
h
FE
I
C
= 1 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
C
= 50 mA; V
CE
= 5 V
Small–signal current gain
I
C
= 1 mA; V
CE
= 10 V; f = 1 kHz
Output capacitance at f = 1 MHz
I
E
= 0; V
CB
= 10 V
Input capacitance at f = 1 MHz
I
C
= 0; V
EB
= 0.5 V
Transition frequency at f = 100 MHz
I
C
= 10 mA; V
CE
= 10 V
h
FE
h
FE
h
fe
C
o
C
i
f
T
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
min.
max.
min.
min.
max.
max.
max.
min.
max.
50 nA
50
µA
50 nA
160 V
180 V
6 V
0.15
1
0.2
1
80
80
250
30
50
200
6 pF
30 pF
100
MHz
300
MHz
V
V
V
V
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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