MITSUBISHI IGBT MODULES
CM75TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
B
D
X Q X Q X
Z - M5 THD
(7 TYP.)
S
N
G
u
P E
u
P
G
v
P E
v
P
G
w
P E
w
P
P
R
L
C
N
P
P
G
u
N E
u
N
G
v
N E
v
N
G
w
N E
w
N
J
U
N
V
W
A
E
T
G
F
K
U
AA
M
M
M
M
AA
Y - DIA.
(4 TYP.)
TAB #110, t = 0.5
H
V
P
GuP
EuP
U
GvP
EvP
V
GwP
EwP
W
GwN
EwN
N
P
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge con-
figuration, with each transistor hav-
ing a reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75TF-28H
is a 1400V (V
CES
), 75 Ampere
Six-IGBT Module.
Type
CM
Current Rating
Amperes
75
V
CES
Volts (x 50)
28
GuN
EuN
N
GvN
EvN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.21
4.02
3.54±0.01
3.15±0.01
2.01
1.38
1.28
1.26 Max.
1.18
0.98
0.96
0.79
0.67
Millimeters
107.0
102.0
90.0±0.25
80.0±0.25
51.0
35.0
32.5
32.0 Max
30.0
25.0
24.5
20.0
17.0
Dimensions
P
Q
R
S
T
U
V
X
Y
Z
AA
Inches
0.57
0.55
0.47
0.43
0.39
0.33
0.30
0.24
0.22
M5 Metric
0.08
Millimeters
14.5
14.0
12.0
11.0
10.0
8.5
7.5
6.0
5.5
M5
2.0
Sep.1998
MITSUBISHI IGBT MODULES
CM75TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E-SHORT)
Gate-Emitter Voltage (C-E-SHORT)
Collector Current (T
C
= 25°C)
Peak Collector Current
Emitter Current** (T
C
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
C
= 25°C, T
j
≤
150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM75TF-28H
–40 to 150
–40 to 125
1400
±20
75
150*
75
150*
600
1.47 ~ 1.96
1.47 ~ 1.96
830
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 7.5mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V
I
C
= 75A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 800V, I
C
= 75A, V
GE
= 15V
I
E
= 75A, V
GE
= 0V
Min.
–
–
5.0
–
–
–
–
Typ.
–
–
6.5
3.1
2.95
383
–
Max.
1.0
0.5
8.0
4.2**
–
–
3.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 75A, di
E
/dt = –150A/µs
I
E
= 75A, di
E
/dt = –150A/µs
V
CC
= 800V, I
C
= 75A,
V
GE1
= V
GE2
= 15V, R
G
= 4.2Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.75
Max.
15
5.3
3
150
350
250
500
300
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.21
0.47
0.025
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM75TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
150
V
GE
= 20V
COLLECTOR CURRENT, I
C
, (AMPERES)
120
T
j
= 25 C
o
120
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
15
14
150
13
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
4
12
90
11
90
3
60
10
60
2
30
9
8
30
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
30
60
90
120
150
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
2
8
10
1
C
ies
10
2
6
I
C
= 150A
10
0
C
oes
4
I
C
= 75A
10
1
2
10
-1
V
GE
= 0V
I
C
= 30A
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-2
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
I
rr
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
4
V
CC
= 800V
V
GE
= ±15V
R
G
= 4.2
Ω
T
j
= 125°C
10
3
10
1
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 75A
16
SWITCHING TIME, (ns)
10
3
t
d(off)
V
CC
= 600V
V
CC
= 800V
t
rr
12
10
2
10
0
t
f
10
2
t
d(on)
8
di/dt = -150A/µsec
T
j
= 25°C
4
10
1
10
1
t
r
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
0
10
-1
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
150
300
450
600
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM75TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.21°C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.47°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Sep.1998
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