CM75DY-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
H-Series Module
75 Amperes/600 Volts
A
B
C
F
F
K
E2 G2
Q - DIA.
(2 TYP.)
D
M
G1 E1
J
C2E1
E2
C1
N
(3 TYP.)
R
S - M5 THD
(3 TYP.)
R
R
.110 TAB
H
L
H
P
E
G
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
G2
E2
C2E1
E2
C1
E1
G1
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
□
High Frequency Operation
(20-25kHz)
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75DY-12H
is a 600V (V
CES
), 75 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
75
V
CES
Volts (x 50)
12
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.57
1.34
1.22 Max.
0.90
0.85
0.79
0.71
Millimeters
94.0
80.0±0.25
40.0
34.0
31.0 Max.
23.0
21.5
20.0
18.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.67
0.63
0.51
0.47
0.28
0.256 Dia.
0.16
M5 Metric
Millimeters
17.0
16.0
13.0
12.0
7.0
Dia. 6.5
4.0
M5
229
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75DY-12H
Dual IGBTMOD™ H-Series Module
75 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
d
–
–
–
V
RMS
CM75DY-12H
–40 to 150
–40 to 125
600
±20
75
150*
75
150*
310
17
26
190
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
FM
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 7.5mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V
I
C
= 75A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Diode Forward Voltage
V
CC
= 300V, I
C
= 75A, V
GS
= 15V
I
E
= 75A, V
GS
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
225
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µ
A
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 75A, di
E
/dt = –150A/
µ
s
I
E
= 75A, di
E
/dt = –150A/
µ
s
V
CC
= 300V, I
C
= 75A,
V
GE1
= V
GE2
= 15V, R
G
= 8.3Ω
V
GE
= 0V, V
CE
= 10V, f = 1MHz
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.2
Max.
7.5
2.6
1.5
120
300
200
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
µ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.40
0.90
0.075
Units
°C/W
°C/W
°C/W
230
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75DY-12H
Dual IGBTMOD™ H-Series Module
75 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
150
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
150
125
100
75
50
25
0
0
2
4
6
8
10
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 25 C
o
125
100
75
VG
E
= 20V
15
12
4
11
3
10
2
50
9
25
0
1
7
8
0
0
25
50
75
100
125
150
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
I
C
= 150A
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
2
8
10
2
10
1
C
ies
6
I
C
= 75A
4
10
1
10
0
C
oes
2
I
C
= 30A
V
GE
= 0V
f = 1MHz
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
f
t
d(off)
10
2
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
20
16
SWITCHING TIME, (ns)
V
CC
= 200V
10
2
t
d(on)
10
2
t
rr
I
rr
10
1
12
V
CC
= 300V
8
10
1
t
r
V
CC
= 300V
V
GE
= ±15V
R
G
= 8.3Ω
T
j
= 125°C
10
1
di/dt = -150A/µsec
T
j
= 25°C
10
0
4
10
0
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
0
10
0
10
-1
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
50
100
150
200
250
300
GATE CHARGE, Q
G
, (nC)
231
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75DY-12H
Dual IGBTMOD™ H-Series Module
75 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.4°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.9°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
232
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
