CM600HU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
U-Series Module
600 Amperes/1200 Volts
2 - M4 NUTS
E
H
A
B
K
L
2 - M8 NUTS
N 4 - Mounting
Holes
F
J
G
C
D
E
G
E
C
CM
T
C
Measured Point
P
M
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
E
C
E
G
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
Inches
4.33
3.66±0.01
3.15
2.44±0.01
0.53
0.37
0.57
Millimeters
110.0
93.0±0.25
80.0
62.0±0.25
13.5
9.5
14.5
Dimensions
H
J
K
L
M
N
P
Inches
0.96
0.22
1.14
0.85
1.34 +0.04/-0.02
0.26 Dia.
Millimeters
24.5
5.5
29.0
21.5
34 +1.0/-0.5
6.5 Dia.
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-24H is a
1200V (V
CES
), 600 Ampere Single
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
600
V
CES
Volts (x 50)
24
1.02 +0.04/-0.02 26 +1.0/-0.5
11
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-24H
Single IGBTMOD™ U-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
–
V
iso
CM600HU-24H
-40 to 150
-40 to 125
1200
±20
600
1200*
600
1200*
3100
95
40
15
600
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 60mA, V
CE
= 10V
I
C
= 600A, V
GE
= 15V, T
j
= 25°C
I
C
= 600A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 600V, I
C
= 600A, V
GE
= 15V
I
E
= 600A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.9
2.85
2250
–
Max.
2
0.5
7.5
3.7
–
–
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 600V, I
C
= 600A,
V
GE1
= V
GE2
= 15V,
R
G
= 2.1 , Resistive
Load Switching Operation
I
E
= 600A, di
E
/dt = -1200A/µs
I
E
= 600A, di
E
/dt = -1200A/µs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
3.3
Max.
90
31.5
18
300
700
450
350
300
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT Module
Per FWDi Module
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.015
Max.
0.04
0.06
–
Units
°C/W
°C/W
°C/W
12
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-24H
Single IGBTMOD™ U-Series Module
600 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
1200
COLLECTOR CURRENT, I
C
, (AMPERES)
960
720
V
GE
= 20V
11
960
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
T
j
= 25
o
C
1200
15
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
12
COLLECTOR CURRENT, I
C
, (AMPERES)
4
3
2
1
720
480
240
10
480
240
0
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
0
240
480
720
960
1200
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
4
T
j
= 25°C
10
2
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
8
6
4
2
EMITTER CURRENT, I
E
, (AMPERES)
I
C
= 1200A
C
ies
I
C
= 600A
10
3
10
1
C
oes
10
2
10
0
C
res
V
GE
= 0V
f = 1MHz
I
C
= 240A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
1.0
1.5
2.0
2.5
3.0
3.5
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
di/dt = -1200A/µsec
T
j
= 25°C
I
rr
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
t
d(off)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 600A
V
CC
= 400V
16
12
8
4
V
CC
= 600V
SWITCHING TIME, (ns)
t
f
t
d(on)
10
2
t
r
10
2
t
rr
10
1
V
CC
= 600V
V
GE
=
±15V
R
G
= 2.1
Ω
T
j
= 125°C
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
0
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
800
1600
2400
3200
GATE CHARGE, Q
G
, (nC)
13
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-24H
Single IGBTMOD™ U-Series Module
600 Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.04°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.06°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
14
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