CM50TU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six IGBTMOD™
KA-Series Module
50 Amperes/1700 Volts
S - NUTS
(5 TYP)
K
CM
J
K
R
T - (4 TYP.)
TC
Measuring
Point
N
P
P
G
V
P E
V
P
G
W
P E
W
P
G
U
P E
U
P
TC
Measuring
Point
L
B E
N
L
N
L
M
Q
G
U
N E
U
N
U
G
V
N E
V
N
V
W
G
W
N E
W
N
R
J
L
N
D
A
W - THICK x X - WIDE
TAB (12 PLACES)
J
L
N
L
V
H
C
F
G
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50TU-34KA is a
1700V (V
CES
), 50 Ampere Six-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
50
V
CES
Volts (x 50)
34
P
G
U
P
E
U
P
U
G
U
N
E
U
N
N
G
V
P
E
V
P
V
G
V
N
E
V
N
G
W
P
E
W
P
W
G
W
N
E
W
N
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
4.21
4.02
Millimeters
107.0
102.0
Dimensions
M
N
P
Q
R
S
T
V
W
X
Inches
0.57
0.85
0.67
1.91
0.15
M5
0.26 Dia.
0.03
0.02
0.110
Millimeters
14.4
21.7
17.0
48.5
3.75
M5
6.5 Dia.
0.8
0.5
2.79
1.14 +0.04/-0.02 29.0 +1.0/-0.5
3.54±0.01
3.15±0.01
0.16
1.02
0.31
0.91
0.47
0.43
90.0±0.25
80.0±0.25
4.0
26.0
8.1
23.0
12.0
11.0
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-34KA
Six IGBTMOD™ KA-Series Module
50 Amperes/1700 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM50TU-34KA
-40 to 150
-40 to 125
1700
±20
50
100*
50
100*
600
31
31
680
3500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 5mA, V
CE
= 10V
I
C
= 50A, V
GE
= 15V, T
j
= 25°C
I
C
= 50A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 1000V, I
C
= 50A, V
GE
= 15V
I
E
= 50A, V
GE
= 0V, T
j
= 25°C
I
E
= 50A, V
GE
= 0V, T
j
= 125°C
Min.
–
–
4.0
–
–
–
–
–
Typ.
–
–
5.5
3.2
3.8
225
–
2.2
Max.
1
0.5
7.0
4.0
–
–
4.6
–
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 1000V, I
C
= 50A,
V
GE1
= V
GE2
= 15V,
R
G
= 6.3 , Resistive
Inductive Load
Switching Operation
I
E
= 50A
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
3.9
Max.
7.0
1.2
0.38
100
100
400
800
200
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-34KA
Six IGBTMOD™ KA -Series Module
50 Amperes/1700 Volts
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
R
th(j-c')
Q
Test Conditions
Per IGBT 1/6 Module
Per FWDi 1/6 Module
Per Module, Thermal Grease Applied
T
c
Measured Point
(Under Chips - IGBT Part)
* If you use this value, R
th(f-a)
should be measured just under the chips.
Min.
–
–
–
–
Typ.
–
–
0.09
–
Max.
0.21
0.47
–
0.17*
Units
°C/W
°C/W
°C/W
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
100
COLLECTOR CURRENT, I
C
, (AMPERES)
80
60
40
V
GE
= 20V
11
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
T
j
= 25
o
C
15
14
100
12
6
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
80
5
4
3
2
1
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
60
9
40
20
0
20
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
5
10
15
20
0
20
40
60
80
100
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
1
C
ies
8
6
I
C
= 100A
10
0
C
oes
C
res
10
2
4
2
I
C
= 50A
10
-1
I
C
= 20A
V
GE
= 0V
0
0
5
10
15
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-2
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-34KA
Six IGBTMOD™ KA-Series Module
50 Amperes/1700 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
4
t
f
t
d(off)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 1000V
V
GE
=
±15V
R
G
= 6.3
Ω
T
j
= 125°C
INDUCTIVE
LOAD
V
CC
= 1000V
V
GE
=
±15V
R
G
= 6.3
Ω
T
j
= 125°C
INDUCTIVE
LOAD
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 50A
SWITCHING TIME, (ns)
10
3
16
12
8
4
V
CC
= 800V
V
CC
= 1000V
10
2
t
d(on)
10
2
t
rr
I
rr
10
1
10
1
t
r
10
0
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
100
200
300
GATE CHARGE, Q
G
, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.21°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.47°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
4
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
