CM400DU-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Dual IGBTMOD™
400 Amperes/250 Volts
TC MEASURE POINT
A
D
T - (4 TYP.)
H
G2
F
B E
C
L
CM
C2E1
E2
C1
E2
E1
G1
J
H
U
S - NUTS
(3 TYP)
Q
Q
P
N
G
K
K
K
R
M
C
L
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400DU-5F is a
250V (V
CES
), 400 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
400
V
CES
Volts (x 50)
5
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
Inches
4.25
2.44
Millimeters
108.0
62.0
Dimensions
L
M
N
P
Q
R
S
T
U
Inches
0.87
0.33
0.10
0.85
0.98
0.11
M6
0.26 Dia.
0.002
Millimeters
22.0
8.5
2.5
21.5
25.0
2.8
M6
6.5 Dia.
0.05
1.14 +0.04/-0.02 29.0 +1.0/-0.5
3.66±0.01
1.88±0.01
0.67
0.16
0.24
0.59
0.55
93.0±0.25
48.0±0.25
17.0
4.0
6.0
15.0
14.0
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-5F
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM400DU-5F
-40 to 150
-40 to 125
250
±20
400
800*
400
800*
890
40
40
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 10V, T
j
= 25°C
I
C
= 400A, V
GE
= 10V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 100V, I
C
= 400A, V
GE
= 10V
I
E
= 400A, V
GE
= 0V
Min.
–
–
3.0
–
–
–
–
Typ.
–
–
4.0
1.2
1.1
1500
–
Max.
1.0
0.5
5.0
1.7
–
–
2.0
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 100V, I
C
= 400A,
V
GE1
= V
GE2
= 10V,
R
G
= 6.3 , Resistive
Load Switching Operation
I
E
= 400A
I
E
= 400A
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
16.0
Max.
110
7.0
3.8
850
400
1100
500
300
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c´)
Q
R
th(c-f)
Test Conditions
Per IGBT 1/2 Module
Per FWDi 1/2 Module
Per IGBT 1/2 Module*
Per Module, Thermal Grease Applied
Min.
–
–
–
–
Typ.
–
–
–
0.04
Max.
0.14
0.24
0.08
–
Units
°C/W
°C/W
°C/W
°C/W
2
* T
C
measured point is just under chip.
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-5F
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
800
COLLECTOR CURRENT, I
C
, (AMPERES)
540
480
V
GE
= 15V
6.5
640
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
T
j
= 25
o
C
10
8
800
6.25
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
2.0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
1.6
1.2
0.8
0.4
6
5.75
480
320
5.5
320
160
0
160
5.25
5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
2
4
6
8
10
0
160
320
480
640
800
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
10
2
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
C
ies
8
6
4
2
EMITTER CURRENT, I
E
, (AMPERES)
10
1
C
oes
10
2
I
C
= 800A
I
C
= 400A
I
C
= 160A
10
0
C
res
V
GE
= 0V
f = 1MHz
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
REVERSE RECOVERY TIME, t
rr
, (ns)
t
d(off)
t
d(on)
t
f
t
r
10
3
10
3
20
I
C
= 400A
16
12
8
4
SWITCHING TIME, (ns)
V
CC
= 50V
t
rr
I
rr
10
2
10
2
10
2
V
CC
= 100V
V
CC
= 100V
V
GE
=
±10V
R
G
= 6.3
Ω
T
j
= 125°C
V
CC
= 100V
V
GE
=
±10V
R
G
= 6.3
Ω
T
j
= 125°C
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
1
10
3
10
2
EMITTER CURRENT, I
E
, (AMPERES)
0
0
500 1000 1500 2000 2500 3000
GATE CHARGE, Q
G
, (nC)
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-5F
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.14°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.24°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-3
10
-4
10
-3
10
-3
10
-5
TIME, (s)
10
-3
10
-4
10
-3
4
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