Features
•
Operating voltage: 5V
•
Access time: 30, 45ns
•
Very low power consumption
– active: 250mW (Typ)
– standby: 1 µW (Typ)
– data retention: 0.5 µW (Typ)
Wide temperature Range: -55°C to +125°C
400Mils width package
TTL compatible inputs and outputs
Asynchronous
Single 5 volt supply
Equal Cycle and access time
Gated inputs:
– no pull-up/down
– resistors are required
QML Q and V with SMD 5962-89598
•
•
•
•
•
•
•
•
Rad Tolerant
5V 128 K x 8
Very Low Power
CMOS SRAM
M65608E
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8bits.
Atmel Wireless & Microcontrollers brings the solution to applications where fast com-
puting is as mandatory as low consumption, such as aerospace electronics, portable
instruments, or embarked systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value= 20µA) with a fast access time at
30ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. F–20-Aug-01
1
M65608E
Interface
Block Diagram
2
Rev. F–20-Aug-01
Pin Configuration
32 pins DIL side-brazed
32 pins Flatpack
400 MILS
400 MILS
Table 1.
Pin Names
A0-A16
I/O0- I/O7
CS1
CS2
W
OE
VCC
GND
Address inputs
Data Input/Output
Chip select 1
Chip select 2
Write Enable
Output Enable
Power
Ground
Table 2.
Truth Table
CS1
H
CS2
X
W
X
OE
X
INPUTS/
OUTPUTS
Z
MODE
Deselect/
Power-down
Deselect/
Power Down
Read
Write
Output Disable
X
L
L
L
L
H
H
H
X
H
L
H
X
L
X
H
Z
Data Out
Data In
Z
L = low, H = high, X = H or L, Z = high impedance.
3
M65608E
Rev. F–20-Aug-01
M65608E
Electrical Characteristics
Absolute Maximum
Ratings
Supply voltage to GND potential:..................................... -0.5V + 7.0V
DC input voltage: ............................................................. GND - 0.3V to VCC + 0.3
DC output voltage high Z state: .......................................GND - 0.3V to VCC + 0.3
Storage temperature: ....................................................... -65°C to +150°C
Output current into outputs (low):..................................... 20mA
Electro statics discharge voltage: .................................... > 2001V
(MIL STD 883D method 3015.3)
Operating Range
OPERATING VOLTAGE
Military
5V + 10%
OPERATING TEMPERATURE
-55
°
C to + 125
°
C
Recommended DC Operating Conditions
PARAMETER
Vcc
Gnd
VIL
VIH
DESCRIPTION
Supply voltage
Ground
Input low voltage
Input high voltage
MINIMUM
4.5
0.0
GND - 0.3
2.2
TYPICAL
5.0
0.0
0.0
-
MAXIMUM
5.5
0.0
0.8
VCC + 0.3
UNIT
V
V
V
V
Capacitance
PARAMETER
Cin
(1)
DESCRIPTION
Input low voltage
Output high voltage
MINIMUM
-
-
TYPICAL
-
-
MAXIMUM
8
8
UNIT
pF
pF
Cout
(1)
1.
Guaranteed but not tested.
4
Rev. F–20-Aug-01
DC Parameters
PARAMETER
IIX
(1)
DESCRIPTION
Input leakage current
Output leakage current
Output low voltage
Output high voltage
MINIMUM
-1
-1
-
2.4
TYPICAL
-
-
-
-
MAXIMUM
1
1
0.4
-
UNIT
µA
µA
V
V
IOZ
(1)
VOL
VOH
(2)
(3)
1.
2.
3.
Gnd < Vin < Vcc, Gnd < Vout < Vcc Output Disabled.
Vcc min. IOL = 1 mA.
Vcc min. IOH = -0.5 mA.
Consumption
65608E
SYMBOL
ICCSB
(1)
(2)
65608E
- 45
2
300
100
UNIT
mA
µA
mA
VALUE
max
max
max
DESCRIPTION
Standby supply current
Standby supply current
Dynamic operating
current
- 30
2
300
130
ICCSB1
ICCOP
(3)
1.
2.
3.
CS1 > VIH or CS2 < VIL and CS1 < VIL.
CS1 > Vcc - 0.3V or, CS2 < Gnd + 0.3 V and CS1 < 0.2V
F = 1/TAVAV, Iout = 0 mA, W = OE = VIH, Vin = Gnd or Vcc, Vcc max.
AC Parameters
Input pulse levels:............................................. Gnd to 3.0 V
Input rise: ......................................................... 5 ns
Input timing reference levels: ........................... 1.5 V
Output loading IOL/IOH (see figure 1a and 1b):.....+30 pF
AC Test Loads Waveforms
Figure 1a
Figure 1b
Figure 2
5
M65608E
Rev. F–20-Aug-01
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