MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
T
C
Measured
Point
A
D
F
S (4 - Mounting
Holes)
H
B
E
T
CM
3 - M6 Nuts
Q
Q
P
N
G
K
K
K
R
M
C
L
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management
.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Application:
Brake
E2
G2
C2E1
E2
C1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
K
Inches
4.25
2.44
Millimeters
108.0
62.0
Dimensions
K
L
M
N
P
Q
R
S
T
Inches
0.71
0.87
0.33
0.10
0.85
0.98
0.11
0.25 Dia.
0.6
Millimeters
18.0
22.0
8.5
2.5
21.5
25.0
2.8
6.5 Dia.
15.15
Type
CM
1.14 +0.04/-0.02 29 +1.0/-0.5
3.66±0.01
1.88±0.01
0.87
0.16
0.24
0.71
93.0±0.25
48.0±0.25
22.0
4.0
6.0
18.0
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM300E3U-12H is a
600V (V
CES
), 300 Ampere IGBT
Module.
Current Rating
Amperes
300
V
CES
Volts (x 50)
12
Sep.1998
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C, T
j
≤
150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM300E3U-12H
-40 to 150
-40 to 125
600
±20
300
600*
300
600*
890
3.5~4.5
3.5~4.5
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
V
FM
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V, T
j
= 25°C
I
C
= 300A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
V
CC
= 300V, I
C
= 300A, V
GE
= 15V
I
E
= 300A, V
GE
= 0V
I
F
= 300A, Clamp Diode Part
Min.
–
–
4.5
–
–
–
–
–
Typ.
–
–
6
2.4
2.6
600
–
–
Max.
1
0.5
7.5
3.0
–
–
2.6
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
rr
Q
rr
V
CC
= 300V, I
C
= 300A,
V
GE1
= V
GE2
= 15V,
R
G
= 2.1Ω, Resistive
Load Switching Operation
I
E
= 300A, di
E
/dt = -600A/µs
I
E
= 300A, di
E
/dt = -600A/µs
I
F
= 300A, Clamp Diode Part
di
F
/dt = -600A/µs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.72
–
0.72
Max.
26.4
14.4
4
250
600
350
300
160
–
160
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Sep.1998
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Clamp Diode Part
Per Module, Thermal Grease Applied
Min.
–
–
–
–
Typ.
–
–
–
0.020
Max.
0.14
0.24
0.24
–
Units
°C/W
°C/W
°C/W
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
600
COLLECTOR CURRENT, I
C
, (AMPERES)
500
400
300
200
100
0
V
GE
= 20V
15
500
400
300
200
100
0
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
T
j
= 25
o
C
14
600
COLLECTOR CURRENT, I
C
, (AMPERES)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
13
4
3
2
1
12
11
10
9
8
0
0
4
8
12
16
20
0
100
200
300
400
500
600
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
10
2
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
V
GE
= 0V
8
6
4
2
I
C
= 600A
EMITTER CURRENT, I
E
, (AMPERES)
C
ies
10
1
I
C
= 300A
10
2
C
oes
10
0
C
res
I
C
= 120A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0.6
1.0
1.4
1.8
2.2
2.6
3.0
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
Sep.1998
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
di/dt = -600A/µsec
T
j
= 25°C
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
t
f
SWITCHING TIME, (ns)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 300A
15
V
CC
= 200V
V
CC
= 300V
t
d(off)
t
d(on)
I
rr
10
2
t
r
V
CC
= 300V
V
GE
=
±15V
R
G
= 2.1Ω
T
j
= 125°C
10
2
t
rr
10
1
10
5
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
0
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
200
400
600
800
GATE CHARGE, Q
G
, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.14°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.24°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Sep.1998
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