CM200HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
H-Series Module
200 Amperes/1200 Volts
A
S
P
W - M6 THD.
(2 TYP.)
D
F
G
C
T
X - M4 THD.
(2 TYP.)
Q
M
B
H
N
V - DIA.
(4 TYP.)
U
K
R
K
E
J
L
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□
High Frequency Operation
(20-25kHz)
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e.
CM200HA-24H is a 1200V (V
CES
),
200 Ampere Single IGBTMOD™
Power Module.
Type
CM
Current Rating
Amperes
200
V
CES
Volts (x 50)
24
T
E
E
G
C
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
4.21
3.661±0.01
2.44
1.89±0.01
1.42 Max.
1.34
1.18
1.14
0.98 Max.
0.94
0.93
Millimeters
107.0
93.0±0.25
62.0
48.0±0.25
36.0 Max.
34.0
30.0
29.0
25.0 Max.
24.0
23.5
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.83
0.69
0.63
0.51
0.43
0.35
0.28
0.12
0.26 Dia.
M6 Metric
M4 Metric
Millimeters
21.0
17.5
16.0
13.0
11.0
9.0
7.0
3.0
Dia. 6.5
M6
M4
181
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HA-24H
Single IGBTMOD™ H-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M6 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
d
–
–
–
V
RMS
CM200HA-24H
–40 to 150
–40 to 125
1200
±20
200
400*
200
400*
1500
26
26
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
FM
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 20mA, V
CE
= 10V
I
C
= 200A, V
GE
= 15V
I
C
= 200A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Diode Forward Voltage
V
CC
= 600V, I
C
= 200A, V
GS
= 15V
I
E
= 200A, V
GS
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.5
2.25
1000
–
Max.
1.0
0.5
7.5
3.4**
–
–
3.4
Units
mA
µ
A
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 200A, di
E
/dt = –400A/
µ
s
I
E
= 200A, di
E
/dt = –400A/
µ
s
V
CC
= 600V, I
C
= 200A,
V
GE1
= V
GE2
= 15V, R
G
= 1.6Ω
V
GE
= 0V, V
CE
= 10V, f = 1MHz
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
1.49
Max.
40
14
8
250
400
300
350
250
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.085
0.18
0.040
Units
°C/W
°C/W
°C/W
182
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HA-24H
Single IGBTMOD™ H-Series Module
200 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
400
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
400
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25 C
o
15
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
12
320
V
GE
= 20V
11
320
4
240
10
240
3
160
160
2
80
7
9
8
80
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
80
160
240
320
400
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
I
C
= 400A
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
2
8
C
ies
10
1
C
oes
6
I
C
= 200A
10
2
4
10
0
C
res
2
I
C
= 80A
V
GE
= 0V
f = 1MHz
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
f
t
d(off)
t
d(on)
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 200A
16
SWITCHING TIME, (ns)
V
CC
= 400V
V
CC
= 600V
I
rr
10
2
t
r
10
2
t
rr
12
10
1
8
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6
Ω
T
j
= 125°C
di/dt = -400A/µsec
T
j
= 25°C
4
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
0
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
400
800
1200
1600
GATE CHARGE, Q
G
, (nC)
183
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HA-24H
Single IGBTMOD™ H-Series Module
200 Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.085°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.18°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
184
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