MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
CM10MD-24H
¡I
C .....................................................................
10A
¡V
CES .........................................................
1200V
¡Insulated
Type
¡CIB
Module
3φ Inverter+3φ Converter+Brake
¡UL
Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics
OUTLINE DRAWING & CIRCUIT DIAGRAM
P
P1
GU
R
S
T
B
EU
GV
EV
GW
EW
Dimensions in mm
D
2.54
2.54
2.54
2.54
2.54 2.54 2.54
12.28 7.62 7.62 7.62
GW
EU
EV
GV
EW
GW
GV
GU
GB
E
GB
GU
GV
GW
E
7.5 8
8
N
2 -
φ4.8
±0.1
MOUNTING HOLES
U
V
CIRCUIT DIAGRAM
W
P
P1
N
GU
9
±0.1
54
64
±0.5
9
±0.1
LABEL
53
±0.5
R
S
T
B
U
V
W
2 -
φ4.8
±0.2
GUIDE HOLE
8
26.5
±0.3
26.5
±0.3
32
2
1
t = 0.5
(30°)
0.8
t = 0.5
16.5
5
+1.0
–0.5
8
8
12.5 12.5
80
±0.3
90
±0.5
8
8
5.3
5
+1.0
–0.5
MAIN CIRCUIT
TERMINAL
CONTROL CIRCUIT
TERMINAL
Note. Not use the guiding holes to mount on the cooling fin.
Feb.1999
MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
INVERTER PART
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note. 1)
I
EM (Note. 1)
P
C (Note. 3)
(T
j
= 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Emitter Current
Maximum collector dissipation
G – E Short
C – E Short
T
C
= 25°C
PULSE
T
C
= 25°C
PULSE
T
f
= 25°C
Condition
(Note. 2)
(Note. 2)
Rating
1200
±20
10
20
10
20
57
Unit
V
V
A
A
A
A
W
BRAKE PART
Symbol
V
CES
V
GES
I
C
I
CM
P
C (Note. 3)
V
RRM
I
FM (Note. 3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Maximum Collector dissipation
Repetitive peak reverse voltage
Forward current
G – E Short
C – E Short
T
C
= 25°C
PULSE
T
f
= 25°C
Clamp diode part
Clamp diode part
Condition
Rating
1200
±20
10
20
57
1200
10
Unit
V
V
A
A
W
V
A
(Note. 2)
CONVERTER PART
Symbol
V
RRM
E
a
I
O
I
FSM
I
2
t
Parameter
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2
t for fusing
Condition
Rating
1600
440
10
100
42
Unit
V
V
A
A
A
2
s
3φ rectifying circuit
1 cycle at 60Hz, peak value Non-repetitive
Value for one cycle of surge current
COMMON RATING
Symbol
T
j
T
stg
V
iso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Condition
Rating
–40 ~ +150
–40 ~ +125
2500
1.47 ~1.96
60
Unit
°C
°C
V
N.m
g
AC 1 min.
Mounting M4 screw
Typical value
Feb.1999
MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
INVERTER PART
Symbol
I
CES
Parameter
(T
j
= 25°C)
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 1.0mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 10A, V
GE
= 15V
T
j
= 150°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 10A, V
GE
= 15V
V
CC
= 600V, I
C
= 10A
V
GE1
= V
GE2
= 15V
R
G
= 31Ω
Resistive load
I
E
= 10A, V
GE
= 0V
I
E
= 10A, V
GE
= 0V
di
e
/ dt = – 20A /
µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
Collector cutoff current
Gate-emitter
V
GE(th)
threshold voltage
Gate-emitter cutoff current
I
GES
Collector-emitter
V
CE(sat)
saturation voltage
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer capacitance
C
res
Total gate charge
Q
G
Turn-on delay time
t
d (on)
Turn-on rise time
t
r
t
d (off)
Turn-off delay time
t
f
Turn-off fall time
V
EC (Note. 1)
Emitter-collector voltage
t
rr (Note. 1)
Reverse recovery time
Q
rr (Note. 1)
Reverse recovery charge
R
th(j-f)
Q
(Note. 5)
Thermal resistance
R
th(j-f)
R
(Note. 5)
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.7
2.45
—
—
—
50
—
—
—
—
—
—
0.08
—
—
Max.
1
7.5
0.5
3.4
—
2.0
1.5
0.4
—
100
200
150
350
3.5
250
—
2.2
3.1
Unit
mA
V
µ
A
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µ
C
°C/W
°C/W
(Note. 4)
BRAKE PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
Parameter
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-to-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
V
CE
= V
CES
, V
GE
= 0V
I
C
= 1.0mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 10A, V
GE
= 15V
T
j
= 150°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 10A, V
GE
= 15V
I
F
= 10A, Clamp diode part
IGBT part
Clamp diode part
Condition
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.7
2.45
—
—
—
50
—
—
—
Max.
1
7.5
0.5
3.4
—
2.0
1.5
0.4
—
1.7
2.2
2.7
Unit
mA
V
µ
A
V
nF
nF
nF
nC
V
°C/W
°C/W
(Note. 4)
C
ies
C
oes
C
res
Q
G
V
FM
R
th(j-f)
Q
(Note. 5)
Thermal resistance
R
th(j-f)
R
(Note. 5)
CONVERTER PART
Symbol
Parameter
V
R
= V
RRM
, T
j
= 150°C
I
F
= 10A
Per 1/6 module
Condition
Min.
—
—
—
Limits
Typ.
—
—
—
Max.
8
1.7
2.7
Unit
mA
V
°C/W
Repetitive reverse current
I
RRM
Forward voltage drop
V
FM
R
th(j-f) (Note. 5)
Thermal resistance
Note 1.
2.
3.
4.
5.
I
E
, V
EC
, t
rr,
Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Thermal resistance is specified under following conditions.
•
The conductive greese applied, between module and fin.
•
Al plate is used as fin.
Feb.1999
MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
20
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
V
CE
= 10V
COLLECTOR CURRENT I
C
(A)
V
GE
= 20
(V)
T
j
= 25°C
15
12
15
15
11
10
10
5
9
8 7
0
0
1
2
3
4
5
6
7
8
9 10
10
5
T
j
= 25°C
T
j
= 125°C
0
0
2
4
6
8 10 12 14 16 18 20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16 18 20
I
C
= 4A
I
C
= 10A
I
C
= 20A
T
j
= 25°C
4
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
3
2
1
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
CAPACITANCE VS. V
CE
(TYPICAL)
10
1
7
V
GE
= 0V
5
3
2
T
j
= 25°C
EMITTER CURRENT I
E
(A)
3
2
C
ies
10
0
7
5
3
2
10
1
7
5
3
2
C
oes
10
–1
7
5
3
2
10
0
7
C
res
3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3
1.0
1.5
2.0
2.5
3.0
3.5
10
–2
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Feb.1999
MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
f
t
d(off)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
3
10
1
– di/dt = 20A / µs
7
7
T
j
= 25°C
5
3
2
5
3
2
SWITCHING TIMES (ns)
3
2
10
2
7
5
3
2
REVERSE RECOVERY TIME t
rr
(ns)
7
5
10
2
7
5
3
2
t
rr
I
rr
10
0
7
5
3
2
t
r
t
d(on)
V
CC
= 600V
V
GE
= ±15V
R
G
= 31Ω
T
j
= 125°C
5 7
10
0
2
3
5 7
10
1
2
3
5
10
1
7
10
1
7
10
0
2
3
5 7
10
1
10
–1
2
3
5 7
COLLECTOR CURRENT I
C
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
f
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
f
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j – f)
10
0
R
th(j – f)
= 2.2°C/ W
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j – f)
10
0
R
th(j – f)
= 3.1°C/ W
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
10
–2
10
–2
10
–2
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
V
GE
– GATE CHARGE
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
18
16
14
12
10
8
6
4
2
0
0
I
C
= 10A
V
CC
= 400V
V
CC
= 600V
20
40
60
80
GATE CHARGE Q
G
(nC)
Feb.1999
REVERSE RECOVERY CURRENT l
rr
(A)
嵌入式系统
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