CM100TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Six IGBTMOD™
100 Amperes/600 Volts
J
S - NUTS (5 TYP)
CM
N
K
P
K
R
T (4 TYP.)
P
GUP EUP
GVP EVP
GWP EWP
L
B E
N
L
N
L
M
Q
TC
MEASURING
POINT
TC
MEASURING
POINT
GUN EUN
GVN EVN
GWN EWN
U
V
W
J
L
N
D
A
W - THICK x X - WIDE
TAB (12 PLACES)
J
L
N
L
V
H
C
F
G
P
GUP
RTC
EUP
U
GUN
RTC
EUN
N
EVN
GVN
RTC
EWN
EVP
V
GWN
RTC
GVP
RTC
EWP
W
A
GWP
RTC
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
UPS
□
Battery Powered Supplies
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
4.02
3.58
Millimeters
102.0
91.0
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.47
0.75
0.74
1.55
0.05
M4
0.22 Dia.
0.02
0.12
0.02
0.110
Millimeters
11.85
19.1
18.7
39.3
1.25
M4
5.5 Dia.
0.5
3.05
0.5
2.79
1.14 +0.04/-0.02 29.0 +1.0/-0.5
3.15±0.01
2.91±0.01
0.16
1.02
0.31
0.79
0.39
0.43
80.0±0.25
74.0±0.25
4.0
26.0
8.1
20.0
10.0
11.0
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12F is a
600V (V
CES
), 100 Ampere Six-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
100
V
CES
Volts (x 50)
12
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12F
Trench Gate Design Six IGBTMOD™
100 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T
j
< 150°C)
Mounting Torque, M4 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM100TU-12F
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
350
15
31
570
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V, T
j
= 25°C
I
C
= 100A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
V
CC
= 300V, I
C
= 100A, V
GE
= 15V
I
E
= 100A, V
GE
= 0V
Min.
–
–
5
–
–
–
–
Typ.
–
–
6
1.6
1.6
620
–
Max.
1
20
7
2.2
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12F
Trench Gate Design Six IGBTMOD™
100 Amperes/600 Volts
Dynamic Electrical Characteristics,
T
j
= 2 5
°C
unless othe rwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 300V, I
C
= 100A,
V
GE1
= V
GE2
= 15V,
R
G
= 6.3 ,
Inductive Load
Switching Operation
I
E
= 100A
V
CE
= 10V, V
GE
= 0V
Test Conditions
–
–
–
–
–
–
–
–
–
Min.
–
–
–
–
–
–
–
–
1.9
Typ.
27
1.8
1
100
80
300
250
150
–
Max.
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics,
T
j
= 2 5
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
'Q
R
th(c-f)
Test Conditions
Per IGBT 1/6 Module, T
c
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per FWDi 1/6 Module, T
c
Reference
Point per Outline drawing
Thermal Resistance, Junction to Case
Per IGBT 1/6 Module,
T
c
Reference Point Under Chip
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.018
–
°C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
–
Typ.
Max.
0.35
Units
°C/W
°C/W
°C/W
–
–
0.70
–
0.23
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12F
Trench Gate Design Six IGBTMOD™
100 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT, I
C
, (AMPERES)
15
9.5
160
120
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25
o
C
11
10
2.5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
5
T
j
= 25°C
V
GE
= 20V
9
2.0
1.5
1.0
0.5
4
3
I
C
= 200A
80
40
8
7.5
8.5
2
1
I
C
= 100A
I
C
= 40A
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
40
80
120
160
200
COLLECTOR-CURRENT, I
C
, (AMPERES)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
2
V
GE
= 0V
C
ies
10
3
V
CC
= 300V
V
GE
=
±15V
t
d(off)
R
G
= 6.3
Ω
t
f
T
j
= 125°C
Inductive Load
t
d(on)
10
2
10
1
SWITCHING TIME, (ns)
10
2
10
1
10
0
C
oes
C
res
10
1
t
r
10
0
0
.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
10
0
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
2
REVERSE RECOVERY TIME, t
rr
, (ns)
10
2
t
rr
I
rr
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
10
-3
10
-2
10
-1
10
0
10
1
I
C
= 100A
16
12
8
4
V
CC
= 200V
V
CC
= 300V
10
0
Per Unit Base
R
th(j-c)
= 0.35°C/W (IGBT)
R
th(j-c)
= 0.7°C/W (FWDi)
Single Pulse
T
C
= 25°C
10
1
V
CC
= 300V
V
GE
=
±15V
R
G
= 6.3
Ω
T
j
= 25°C
Inductive Load
10
1
10
-1
10
-1
10
-2
10
-2
10
0
10
0
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
10
-3
10
-5
TIME, (s)
300
600
900
10
-4
10
-3
10
-3
GATE CHARGE, Q
G
, (nC)
4
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