CM100TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD™
H-Series Module
100 Amperes/600 Volts
X
Z - M4 THD
(7 TYP.)
B
u
P E
u
P
A
C
Q X
S
Q X
N
B
v
P E
v
P
B
w
P E
w
P
P
B
u
N E
u
N
P
B
v
N E
v
N
B
w
N E
w
N
P
G
B
E
D
G
U
V
W
N
R
K
J
N
U
T
N
W
AA
L
M
M
AA
L
Y DIA. (4 TYP.)
.110 TAB
V
F
H
AB
P
BuP
P
EuP
BvP
EvP
BwP
EwP
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
□
High Frequency Operation
(20-25kHz)
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-12H
is a 600V (V
CES
), 100 Ampere
Six-IGBT IGBTMOD™ Power
Module.
Type
CM
Current Rating
Amperes
100
V
CES
Volts (x 50)
12
BuN
EuN
u
N
BvN
EvN
v
BwN
EwN
w
N
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.02±0.02
3.58±0.02
3.15±0.01
2.913±0.01
1.69
Millimeters
102±0.5
91.0±0.5
80.0±0.25
74.0±0.25
43.0
Dimensions
P
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
Inches
0.65
0.55
0.47
0.43
0.39
0.33
0.32
0.24 Rad.
0.24
0.22 Dia.
M4 Metric
0.08
0.28
Millimeters
16.5
14.0
12.0
11.0
10.0
8.5
8.1
Rad. 6.0
6.0
Dia. 5.5
M4
2.0
7.0
1.18+0.06/-0.02 30.0+1.5/-0.5
1.18
1.16
1.06
0.96
0.87
0.79
0.67
30.0
29.5
27.0
24.5
22.0
20.0
17.0
315
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-12H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M4 Terminal Screws
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
d
–
–
–
V
RMS
CM100TF-12H
–40 to 150
–40 to 125
600
±20
100
200*
100
200*
400
13
17
540
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
FM
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V
I
C
= 100A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Diode Forward Voltage
V
CC
= 300V, I
C
= 100A, V
GS
= 15V
I
E
= 100A, V
GS
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
300
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µ
A
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 100A, di
E
/dt = –200A/
µ
s
I
E
= 100A, di
E
/dt = –200A/
µ
s
V
CC
= 300V, I
C
= 100A,
V
GE1
= V
GE2
= 15V, R
G
= 6.3Ω
V
GE
= 0V, V
CE
= 10V, f = 1MHz
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.27
Max.
10
3.5
2
120
300
200
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
µ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.31
0.70
0.033
Units
°C/W
°C/W
°C/W
316
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-12H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
T
j
= 25
o
C
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
200
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
GE
= 20V
15
12
150
11
4
150
3
100
10
100
2
50
7
9
8
50
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
50
100
150
200
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
I
C
= 200A
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
2
8
10
1
C
ies
6
I
C
= 100A
10
2
4
C
oes
10
0
V
GE
= 0V
f = 1MHz
2
I
C
= 40A
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
2
t
f
I
rr
t
rr
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
16
SWITCHING TIME, (ns)
V
CC
= 200V
t
d(off)
12
10
2
t
d(on)
V
CC
= 300V
V
GE
= ±15V
R
G
= 6.3Ω
T
j
= 125°C
10
1
10
1
V
CC
= 300V
8
t
r
di/dt = -200A/µsec
T
j
= 25
o
C
4
10
1
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
0
10
2
0
0
100
200
300
400
500
GATE CHARGE, Q
G
, (nC)
317
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-12H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.31°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.7°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
318
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