CM100DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Dual IGBTMOD™
100 Amperes/1200 Volts
N
P - NUTS (3 PLACES)
TC MEASURING
POINT
A
D
Q (2 PLACES)
E
E2G2
CM
C2E1
E2
C1
F
G
B
H
G1E1
F
M
K
K
J
R
C
L
G2
E2
RTC
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
UPS
□
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24F is a
1200V (V
CES
), 100 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
100
V
CES
Volts (x 50)
24
C2E1
E2
C1
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
3.70
1.89
Millimeters
94.0
48.0
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.53
0.91
1.13
0.67
0.28
M5
0.26 Dia.
0.16
Millimeters
13.5
23.0
28.7
17.0
7.0
M5
6.5 Dia.
4.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5
3.15±0.01
0.43
0.16
0.71
0.02
80.0±0.25
11.0
4.0
18.0
0.5
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-24F
Trench Gate Design Dual IGBTMOD™
100 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C, T
j
≤
150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM100DU-24F
-40 to 150
-40 to 125
1200
±20
100
200*
100
200*
500
31
40
310
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V, T
j
= 25°C
I
C
= 100A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
I
E
= 100A, V
GE
= 0V
Min.
–
–
5
–
–
–
–
Typ.
–
–
6
1.8
1.9
1100
–
Max.
1
20
7
2.4
–
–
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-24F
Trench Gate Design Dual IGBTMOD™
100 Amperes/1200 Volts
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 600V, I
C
= 100A,
V
GE1
= V
GE2
= 15V,
R
G
= 3.1 ,
Inductive Load
Switching Operation
I
E
= 100A
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
4.1
Max.
39
1.7
1
100
50
400
300
150
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
'Q
R
th(c-f)
Test Conditions
Per IGBT 1/2 Module, T
c
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per FWDi 1/2 Module, T
c
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per IGBT 1/2 Module,
T
c
Reference Point Under Chip
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.035
–
°C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
–
Typ.
Max.
0.25
Units
°C/W
°C/W
°C/W
–
–
0.35
–
0.15
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-24F
Trench Gate Design Dual IGBTMOD™
100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT, I
C
, (AMPERES)
160
120
V
GE
= 20V
9
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25
o
C
11
15
10 9.5
3
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
5
T
j
= 25°C
4
3
I
C
= 200A
2
80
40
8.5
2
1
I
C
= 100A
I
C
= 40A
1
8
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
40
80
120
160
200
COLLECTOR-CURRENT, I
C
, (AMPERES)
0
0
6
8
10
12
14
16
18 20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
2
C
ies
10
3
10
2
10
1
SWITCHING TIME, (ns)
10
2
t
d(off)
V
CC
= 600V
t
f
V
GE
=
±15V
R
G
= 3.1
Ω
T
j
= 125°C
Inductive Load
t
d(on)
10
1
10
0
C
oes
V
GE
= 0V
C
res
10
1
t
r
10
0
0
1.0
2.0
3.0
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
10
0
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 600V
V
GE
=
±15V
R
G
= 3.1
Ω
T
j
= 25°C
Inductive Load
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
10
-3
10
-2
10
-1
10
0
10
1
I
C
= 100A
16
V
CC
= 400V
10
0
Per Unit Base
R
th(j-c)
= 0.25°C/W (IGBT)
R
th(j-c)
= 0.35°C/W (FWDi)
Single Pulse
T
C
= 25°C
12
8
4
V
CC
= 600V
10
2
I
rr
t
rr
10
2
10
-1
10
-1
10
-2
10
-2
10
1
10
0
10
1
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
400
800
1200
1600
GATE CHARGE, Q
G
, (nC)
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
4
4
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