CM100BU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Four IGBTMOD™
U-Series Module
100 Amperes/600 Volts
A
B
F
E
H
E
G
R
S 4 - Mounting
Holes
L
M
GuP
EuP
D
GvP
EvP
GuN
EuN
U
V
C
T
C
Measured
Point
GvN
EvN
P
T
C
Measured
Point
Q
4 - M4 NUTS
J
E
J
H
K
F
G
V
T
U
N
L
0.110 - 0.5 Tab
V
W
X
P
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of four IGBT Transistors in an
H-Bridge configuration, with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100BU-12H is a
600V (V
CES
), 100 Ampere Four-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
100
V
CES
Volts (x 50)
12
GuP
EuP
U
GvP
EvP
V
GuN
EuN
N
GvN
EvN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
2.83
2.17±0.01
3.58
2.91±0.01
0.43
0.79
0.69
0.75
0.39
0.41
0.05
Millimeters
72.0
55±0.25
91.0
74.0±0.25
11.0
20.0
17.5
19.1
10.0
10.5
1.25
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.74
0.02
1.55
0.63
0.57
0.22 Dia.
0.32
1.02
0.59
0.20
1.61
Millimeters
18.7
0.5
39.3
16.0
14.4
5.5 Dia.
8.1
26.0
15.0
5.0
41.0
71
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100BU-12H
Four IGBTMOD™ U-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M4 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM100BU-12H
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
15
31
390
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V, T
j
= 25°C
I
C
= 100A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 300V, I
C
= 100A, V
GE
= 15V
I
E
= 100A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.4
2.6
200
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 300V, I
C
= 100A,
V
GE1
= V
GE2
= 15V,
R
G
= 6.3 , Resistive
Load Switching Operation
I
E
= 100A, di
E
/dt = -200A/µs
I
E
= 100A, di
E
/dt = -200A/µs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.24
Max.
8.8
4.8
1.3
100
250
200
300
160
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT 1/4 Module
Per FWDi 1/4 Module
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.025
Max.
0.31
0.7
–
Units
°C/W
°C/W
°C/W
72
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100BU-12H
Four IGBTMOD™ U-Series Module
100 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT, I
C
, (AMPERES)
V
GE
= 20V
160
15
13
160
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
T
j
= 25
o
C
200
14
COLLECTOR CURRENT, I
C
, (AMPERES)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
4
3
2
1
12
120
11
120
80
10
80
40
0
40
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
0
50
100
150
200
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
10
1
T
j
= 25°C
C
ies
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
8
6
4
2
I
C
= 200A
EMITTER CURRENT, I
E
, (AMPERES)
10
0
C
oes
I
C
= 100A
10
2
C
res
10
-1
V
GE
= 0V
f = 1MHz
I
C
= 40A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-2
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
di/dt = -200 A/µsec
T
j
= 25°C
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 300V
V
GE
=
±15V
R
G
= 6.3
Ω
T
j
= 125°C
t
d(off)
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 100A
16
12
8
4
V
CC
= 200V
V
CC
= 300V
SWITCHING TIME, (ns)
t
f
10
2
t
d(on)
10
2
t
rr
I
rr
10
1
t
r
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
50
100
150
200
250
300
GATE CHARGE, Q
G
, (nC)
73
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100BU-12H
Four IGBTMOD™ U-Series Module
100 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.31°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.7°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
74
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