CD4076BMS
December 1992
CMOS 4 -Bit D-Type Registers
Pinout
CD4076BMS
TOP VIEW
M
N
Q1
Q2
Q3
Q4
CLOCK
VSS
1
2
3
4
5
6
7
8
16 VDD
15 RESET
14 DATA 1
13 DATA 2
12 DATA 3
11 DATA 4
10 G2
9 G1
DATA
INPUT
DISABLE
Features
• High Voltage Type (20V Rating)
• Three State Outputs
• Input Disabled Without Gating the Clock
• Gated Output Control Lines for Enabling or Disabling
the Outputs
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
OUTPUT
DISABLE
Functional Diagram
DATA INPUT
DISABLE
G1
9
14
D1
13
D2
12
4D - TYPE
FLIP-FLOPS
WITH
AND-OR
LOGIC
4
Q2
5
10
G2
CLOCK
7
1
OUTPUT
DISABLE
M
2
3
Q1
N
Description
CD4076BMS types are four-bit registers consisting of D-type
flip-flops that feature three-state outputs. Data Disable inputs
are provided to control the entry of data into the flip-flops.
When both Data Disable inputs are low, data at the D inputs
are loaded into their respective flip-flops on the next positive
transition of the clock input. Output Disable inputs are also
provided. When the Output Disable inputs are both low, the
normal logic states of the four outputs are available to the
load. The outputs are disabled independently of the clock by
a high logic level at either Output Disable input, and present
a high impedance.
The CD4076BMS is supplied in these 16 lead outline pack-
ages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4T
H1E
H6W
D3
Q3
11
D4
15
RESET
6
Q4
VSS = 8
VDD = 16
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3325
7-1029
Specifications CD4076BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ
ja
θ
jc
Ceramic DIP and FRIT Package . . . . . 80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . . 70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUP
S
1
2
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
VDD = 18V
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current
(Source)
Output Current
(Source)
Output Current
(Source)
Output Current
(Source)
N Threshold Voltage
P Threshold Voltage
Functional
VOL15
VOH15
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Tri-State Output
Leakage
VIL
VIH
VIL
VIH
IOZL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIN = VDD or GND
VOUT = 0V
VDD = 20V
VDD = 18V
3
1
2
3
1
2
3
1, 2, 3
1, 2, 3
1
1
1
1
1
1
1
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2
3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C,
+125
o
C,
-
55
o
C
+25
o
C, +125
o
C, -
55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -
55
o
C
+25
o
C, +125
o
C, -
55
o
C
+25
o
C, +125
o
C, -
55
o
C
+25
o
C, +125
o
C, -
55
o
C
+25
o
C
+125
o
C
-55
o
C
-
3.5
-
11
-0.4
-12
-0.4
1.5
-
4
-
-
-
-
V
V
V
V
µA
µA
µA
14.95
0.53
1.4
3.5
-
-
-
-
-2.8
0.7
VOH >
VDD/2
-
-
-
-
-0.53
-1.8
-1.4
-3.5
-0.7
2.8
VOL
<
VDD/2
V
mA
mA
mA
mA
mA
mA
mA
V
V
V
MIN
-
-
-
-100
-1000
-100
-
-
-
-
MAX
10
1000
10
-
-
-
100
1000
100
50
UNIT
S
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
(NOTE 1)
VDD = 20V, VIN = VDD or GND
7-1030
Specifications CD4076BMS
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUP
S
1
2
VDD = 18V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C
-55
o
C
MIN
-
-
-
MAX
0.4
12
0.4
UNIT
S
µA
µA
µA
PARAMETER
Tri-State Output
Leakage
SYMBOL
IOZH
CONDITIONS
(NOTE 1)
VIN = VDD or GND
VOUT = VDD
VDD = 20V
3. For accuracy, voltage is measured differentially to VDD.
Limit is 0.050V max.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
VDD = 5V, VIN = VDD or GND
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
MIN
-
-
-
-
MAX
600
810
200
270
UNITS
ns
ns
ns
ns
PARAMETER
Propagation Delay
Clock to Q Output
Transition Time
SYMBOL
TPHL
TPLH
TTHL
TTLH
CONDITIONS
(Notes 1, 2)
VDD = 5V, VIN = VDD or GND
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
NOTES
1, 2
TEMPERATURE
-55
o
C, +25
o
C
+125
o
C
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL
VOL
VOH
VOH
IOL5
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, VOUT = 0.4V
1, 2
1, 2
1, 2
1, 2
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+125
o
C
-55
o
C
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
-55
o
C
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-55
o
C
MIN
-
-
-
-
-
-
-
-
4.95
9.95
0.36
0.64
0.9
1.6
2.4
4.2
-
-
-
-
-
-
MAX
5
150
10
300
10
600
50
50
-
-
-
-
-
-
-
-
-0.36
-0.64
-1.15
-2.0
-0.9
-2.6
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
7-1031
Specifications CD4076BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
LIMITS
PARAMETER
Output Current (Source)
SYMBOL
IOH15
CONDITIONS
VDD =15V, VOUT = 13.5V
NOTES
1, 2
TEMPERATURE
+125
o
C
-55
o
C
Input Voltage Low
Input Voltage High
Propagation Delay
Clock to Q Output
Propagation Delay
Reset
VIL
VIH
TPHL1
TPLH1
TPHL2
VDD = 10V, VOH > 9V, VOL <
1V
VDD = 10V, VOH > 9V, VOL <
1V
VDD = 10V
VDD = 15V
VDD = 5V
VDD = 10V
VDD = 15V
Propagation Delay
3 - State
TPHZ
TPLZ
VDD = 5V
VDD = 10V
VDD = 15V
Propagation Delay
3 - State
TPZH
TPZL
VDD = 5V
VDD = 10V
VDD = 15V
Transition Time
TTHL
TTLH
TTLH
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
Maximum Clock Input
Frequency
FCL
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Data Setup
Time
TS
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Data Hold Time
Reset Pulse Width
TW
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Clock Pulse
Width
TW
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Data Input Set-
Up Time
TS
VDD = 5V
VDD = 10V
VDD = 15V
Maximum Clock Input
Rise and Fall Time
TRCL
TFCL
VDD = 5V
VDD = 10V
VDD = 15V
Input Capacitance
CIN
Any Input
1, 2
1, 2
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3, 5
1, 2, 3, 5
1, 2, 3, 5
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-
-
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
6
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-2.4
-4.2
3
-
250
180
460
200
150
300
150
120
300
150
120
100
80
-
-
-
-
-
200
80
60
120
50
40
200
100
80
180
100
70
15
5
5
7.5
UNITS
mA
mA
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
pF
Transition Time
7-1032
Specifications CD4076BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
LIMITS
PARAMETER
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
5. If more than one unit is cascaded, TRCL should be made less than or equal to the sum of the transition time and the fixed propagation
delay of the output of the driving stage for the estimated capacitive load.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
SYMBOL
IDD
VNTH
∆VTN
VTP
∆VTP
F
CONDITIONS
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
-
MAX
25
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25
o
C
Limit
UNITS
µA
V
V
V
V
V
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
Supply Current - MSI-2
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
IOL5
IOH5A
±
1.0µA
±
20% x Pre-Test Reading
±
20% x Pre-Test Reading
DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
Group B
Subgroup B-5
Subgroup B-6
Group D
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
Subgroups 1, 2, 3, 9, 10, 11
IDD, IOL5, IOH5A
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
7-1033
分立器件
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