Storage Temperature ............................................................................................................................. -55°C to +150°C
.........................................................................................................-40°C to +85°C
ESD Protection on All Pins (HBM) .........................................................................................................................
≥
4 kV
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
AC/DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
IN
= V
R
+ 1V
(Note
2),
I
OUT
= 1 mA,
C
IN
= C
OUT
= 1
μF
(MCP1811X) or 2.2
μF
(MCP1812X) ceramic (X7R), T
A
= +25°C, SHDN > 1.4V.
Boldface
type applies for junction temperatures T
J
of -40°C to +85°C
(Note
4).
Parameters
Input Operating Voltage
Sym.
V
IN
Min.
1.8
2.0
2.4
Output Voltage Range
Input Quiescent Current
Input Quiescent Current for
SHDN Mode
Ground Current
Maximum Continuous
Output Current
Current Limit
1:
V
OUT
I
Q
I
SHDN
I
GND
I
OUT
I
LIMIT
V
R
– 4%
—
—
—
—
—
150
300
—
—
Typ.
—
—
—
V
R
250
10
5
90
180
—
—
250
500
Max.
5.5
5.5
5.5
V
R
+ 4%
500
250
125
110
220
—
—
420
840
mA
mA
nA
nA
nA
μA
Units
V
V
V
Conditions
I
OUT
≤
50 mA
(MCP1811X, MCP1812X)
I
OUT
≤
150 mA
(MCP1811X, MCP1812X)
I
OUT
≤
300 mA (MCP1812X)
(MCP1811X, MCP1812X)
(Note
2)
I
OUT
= 0
(MCP1811X, MCP1812X)
SHDN = GND (MCP1811A/12A)
SHDN = GND (MCP1811B/12B)
I
OUT
= 0 to 150 mA (MCP1811X)
I
OUT
= 0 to 300 mA (MCP1812X)
MCP1811X
MCP1812X
MCP1811X
MCP1812X
2:
3:
4:
5:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
).
Exceeding the maximum allowable power dissipation will cause the operating junction temperature to exceed
the maximum +85°C rating. Sustained junction temperatures above +85°C can impact device reliability.
V
R
is a nominal regulator output voltage. The minimum V
IN
must meet two conditions: V
IN
≥
V
IN(MIN)
and
V
IN
≥
V
R
+ V
DROPOUT(MAX)
.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load
regulation is tested over a load range from 1 mA to the maximum specified output current.
The junction temperature is approximated by soaking the device under test at an ambient temperature
equal to the desired Junction temperature. The test time is small enough such that the rise in the junction
temperature over the ambient temperature is not significant.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2%
below its nominal value that was measured with an input voltage of V
IN
= V
R
+ 1V.
2018-2019 Microchip Technology Inc.
DS20006088B-page 4
MCP1811A/11B/12A/12B
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, V
IN
= V
R
+ 1V
(Note
2),
I
OUT
= 1 mA,
C
IN
= C
OUT
= 1
μF
(MCP1811X) or 2.2
μF
(MCP1812X) ceramic (X7R), T
A
= +25°C, SHDN > 1.4V.
Boldface
type applies for junction temperatures T
J
of -40°C to +85°C
(Note
4).
Parameters
Foldback Current
Start-up Voltage Overshoot
Line Regulation
Load Regulation
V
OVER
V
OUT
V
OUT
Sym.
Min.
—
—
—
—
—
—
Dropout Voltage
V
DROPOUT
—
Typ.
50
100
5
±20
±25
±50
400
Max.
—
—
10
—
—
—
600
mV
mV
mV
Units
mA
Conditions
R
LOAD
= 1MCP1811X)
R
LOAD
= 1MCP1812X)
%V
OUT
V
IN
= 0V to 5.5V
1.8V < V
IN
< 5.5V (MCP1811X),
2.4V < V
IN
< 5.5V (MCP1812X)
I
OUT
= 1 mA to 150 mA
(MCP1811X)
(Note
3)
I
OUT
= 1mA to 300 mA
(MCP1812X)
(Note
3)
I
OUT
= 150 mA (MCP1811X),
I
OUT
= 300 mA (MCP1812X)
(Note
5)
Shutdown Input
Logic High Input
Logic Low Input
Shutdown Input Leakage
Current
Discharge Transistor R
DCH
AC Performance
Start-up Delay from SHDN
T
DELAY
—
400
—
μs
SHDN = GND to V
IN
,
V
OUT
= GND to 10%V
R
,
V
IN
= V
R
+ 1V to 5.5V
SHDN = GND to V
IN
,
V
OUT
= 10%V
R
to 95% V
R
,
V
IN
= V
R
+ 1V to 5.5V
C
IN
= 0
μF,
V
IN
= V
R
+ 1V + V
INAC
/2 or
V
IN
= V
IN_Min
+ 1V + V
INAC
/2,
I
OUT
= 10 mA and Full Load,
V
INAC
= 0.2V
pk-pk
,
f = 1 kHz
V
SHDN-HIGH
V
SHDN-LOW
SHDN
ILK
70
—
—
—
—
—
—
0.100
1.0
100
—
20
0.500
20.0
—
%V
IN
%V
IN
nA
nA
SHDN = GND
SHDN = 5.5V
MCP1811A/12A
Start-up Rise Time
T
RISE
200
—
1000
μs
Power Supply Ripple
Rejection Ratio
PSRR
—
-50
—
dB
1:
2:
3:
4:
5:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
).
Exceeding the maximum allowable power dissipation will cause the operating junction temperature to exceed
the maximum +85°C rating. Sustained junction temperatures above +85°C can impact device reliability.
V
R
is a nominal regulator output voltage. The minimum V
IN
must meet two conditions: V
IN
≥
V
IN(MIN)
and
V
IN
≥
V
R
+ V
DROPOUT(MAX)
.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load
regulation is tested over a load range from 1 mA to the maximum specified output current.
The junction temperature is approximated by soaking the device under test at an ambient temperature
equal to the desired Junction temperature. The test time is small enough such that the rise in the junction
temperature over the ambient temperature is not significant.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2%
below its nominal value that was measured with an input voltage of V
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