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DSC612RI2A-012PT: 产品描述Clock Generator, 100MHz, CMOS, PBGA6; 产品类别嵌入式处理器和控制器微控制器和处理器; 文件大小876KB，共28页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com; 标准

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DSC612RI2A-012PT概述

Clock Generator, 100MHz, CMOS, PBGA6

DSC612RI2A-012PT规格参数

参数名称	属性值
是否Rohs认证	符合
Objectid	8366759433
包装说明	VFLGA-6
Reach Compliance Code	compliant
Country Of Origin	Thailand
ECCN代码	EAR99
Factory Lead Time	52 weeks
YTEOL	7.18
其他特性	MEMS CLOCK GENERATORS AS EXT CLOCK
JESD-30 代码	R-PBGA-N6
长度	2.5 mm
湿度敏感等级	1
端子数量	6
最高工作温度	85 °C
最低工作温度	-40 °C
最大输出时钟频率	100 MHz
封装主体材料	PLASTIC/EPOXY
封装代码	LGA
封装等效代码	SOLCC6,.08,32
封装形状	RECTANGULAR
封装形式	GRID ARRAY
峰值回流温度（摄氏度）	260
筛选级别	TS 16949
座面最大高度	0.89 mm
最大压摆率	6 mA
最大供电电压	3.63 V
最小供电电压	1.71 V
标称供电电压	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	NO LEAD
端子节距	0.825 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
宽度	2 mm
uPs/uCs/外围集成电路类型	CLOCK GENERATOR, OTHER

DSC612RI2A-012PT文档预览

DSC612

Two-Output Low Power MEMS Clock Generator

Features

• MEMS-Based Clock Generator Eliminates the

Need for External Crystal or Reference Clock

• Two LVCMOS Output Clocks: 2 kHz to 100 MHz

• Low Power Consumption: ~5 mA (Both Outputs

Active)

• Wide Supply Voltage Range: 1.71V to 3.63V

• Ultra-Small Package Sizes:

- 1.6 mm x 1.2 mm

- 2.0 mm x 1.6 mm

- 2.5 mm x 2.0 mm

• High Frequency Stability: ±20 ppm, ±25 ppm,

±50 ppm

• Wide Temperature Range:

- Automotive: –40°C to +125°C

- Ext. Industrial: –40°C to +105°C

- Industrial: –40°C to +85°C

- Commercial: –20°C to +70°C

• Excellent Shock and Vibration Immunity:

- Shock: Qualified to MIL-STD-883E Method

2002.3. Test Condition G (30,000g)

- Vibration: Qualified to MIL-STD-883E Method

2007.2, Test Condition C (70g)

• High Reliability

• Lead-Free and RoHS-Compliant

• Automotive Option AEC-Q100 Available

General Description

The DSC612 is a MEMS low power, ultra-small

footprint, crystal-less family of clock generators. The

DSC612 family is factory-configurable and generates

up to two independent LVCMOS outputs. Each output

can be configured to generate any frequency from

2 kHz to 100 MHz.

The DSC612 implements Microchip’s proven

PureSilicon™ MEMS technology to provide low jitter

and high stability across a wide range of supply

voltages and temperatures. By eliminating the external

quartz crystal, Microchip’s crystal-less™ clock

generators significantly enhance reliability and

accelerate product development.

The DSC612 has two control inputs that can be

configured to function as output enable/disable,

standby, sleep, spread spectrum enable, and

frequency select. The DSC612 is available in space

saving 6-pin, 1.6 mm x 1.2 mm, 2.0 mm x 1.6 mm, and

2.5 mm x 2.0 mm VFLGA plastic packages.

The DSC612 spread spectrum function includes both

center and down spreading, and is explained further in

the

Spread Spectrum

section.

The DSC612 is a highly configurable device and is

factory programmed to meet the customer’s needs.

Microchip’s

ClockWorks Configurator

must be used to

choose the necessary options, create the final part

number, data sheet, and order samples.

Applications

• Low Power/Portable Applications: IoT,

Embedded/Smart Devices

• Consumer: Home Healthcare, Fitness Devices,

Home Automation

• Industrial: Building/Factory Automation,

Surveillance Cameras

Package Type

DSC612

6-Lead VFLGA

(Top View)

OE/STDBY/SLEEP/SSEN/FS/NC

6 VDD

OE/STDBY/SLEEP/FS/NC

5 CLK2

VSS

4 CLK1



2018 Microchip Technology Inc.

DS20006023A-page 1

DSC612

Functional Block Diagram

PIN1

PIN2

DIGITAL

CONTROL

SUPPLY

REGULATION

VDD

OUT DIV1

MEMS

RESONATOR

TEMP SENSOR +

CONTROL &

COMPENSATION

CLK1

PLL1

OUT DIV2

CLK2

PLL2

DS20006023A-page 2



2018 Microchip Technology Inc.

DSC612

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage .......................................................................................................................................... –0.3V to +4.0V

Input Voltage .....................................................................................................................................–0.3V to V

+ 0.3V

ESD Protection (HBM) ............................................................................................................................................... 4 kV

ESD Protection (MM) ................................................................................................................................................400V

ESD Protection (CDM) ............................................................................................................................................... 2 kV

† Notice:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

TABLE 1-1:

Parameter

Supply Voltage

ELECTRICAL CHARACTERISTICS

Symbol

DDSL

DD32k

STDBY

Min.

1.71

—

0.7 x

—

0.8 x

—

Typ.

—

1.4

1.0

1.5

—

1.0

300

—

Max.

3.63

—

±20

±25

±50

±5

±1

1.5

—

0.3 x

200 + 2

Periods

Electrical Characteristics:

= 1.8V ±5% to 3.3V ±10%; T

= –40°C to +125°C, unless noted.

Units

µA

Conditions

Note 1

CLK1

= 27 MHz, f

CLK2

= 25 MHz,

= 1.8V, No Load

CLK2 = SLEEP, f

CLK1

= 25 MHz,

= 1.8V, No Load

CLK2 = SLEEP, f

CLK1

32.768 kHz, V

= 1.8V, No Load

= 1.8V/2.5V

= 3.3V

All temperature ranges

1st year @ +25°C

Per year after the first year

From 90% V

to valid clock

output, T = +25°C

Input logic high

Input logic low

µs

kΩ

Note 5

Note 6

Note 7

I = 6 mA (high drive) or I = 3 mA

(standard drive)

I = –6 mA (high drive) or I = –3 mA

(standard drive)

Active Supply Current

Active Supply Current (Sleep

Mode, 1 PLL Off)

Active Supply Current

(32.768 kHz Output Only)

Standby Supply Current,

Note 2

Frequency Stability,

Note 3

∆f

ppm

Aging

Startup Time

∆f

ppm

Input Logic Levels,

Note 4

Output Disable Time

Output Enable Time

Enable Pull-Up Resistor

Output Logic Levels

OLY

—

OHY

—

0.2 x



2018 Microchip Technology Inc.

DS20006023A-page 3

DSC612

TABLE 1-1:

Parameter

ELECTRICAL CHARACTERISTICS (CONTINUED)

Symbol

Min.

—

RY1

FY1

Typ.

1.2

0.6

1.0

0.5

—

120

100

105

Max.

2.0

1.2

1.5

1.0

100

—

Units

MHz

Conditions

Standard drive 20% - 80% C

10 pF, V

= 1.8V

Standard drive 20% - 80% C

10 pF, V

= 2.5V/3.3V

High drive 20% - 80% C

= 15 pF,

= 1.8V

High drive 20% - 80% C

= 15 pF,

= 2.5V/3.3V

—

CLK1

= 24 MHz, f

CLK2

= 27 MHz,

= 1.8V

CLK1

= 24 MHz, f

CLK2

= 27 MHz,

= 3.3V

CLK1

= 27 MHz, f

CLK2

= 27 MHz or

32.768 kHz, V

= 3.3V

CLK1

= 24 MHz, f

CLK2

= 27 MHz,

= 1.8V

CLK1

= 24 MHz, f

CLK2

= 27 MHz,

= 3.3V

CLK1

= 27 MHz, f

CLK2

= 27 MHz or

32.768 kHz, V

= 3.3V

CLK1

= 24 MHz, f

CLK2

= 27 MHz,

= 1.8V

CLK1

= 24 MHz, f

CLK2

= 27 MHz,

= 3.3V

CLK1

= 27 MHz, f

CLK2

= 27 MHz or

32.768 kHz, V

= 3.3V

Electrical Characteristics:

= 1.8V ±5% to 3.3V ±10%; T

= –40°C to +125°C, unless noted.

Output Transition Time, Rise

Time/Fall Time

RY2

FY2

—

Frequency

Output Duty Cycle

SYM

0.002

—

Period Jitter, RMS

PER

—

Period Jitter, Peak-to-Peak

PER

—

Cycle-to-Cycle Jitter (peak)

Cy-Cy

—

Note 1:

pin should be filtered with a 0.1 µF capacitor.

Excludes input pull-up current.

Includes frequency variations due to initial tolerance, temperature, and power supply voltage.

Input waveform must be monotonic with rise/fall time < 10 ms.

Output disable time takes up to two Periods of the output waveform, plus 200 ns.

For parts configured with OE, not Standby.

Output is enabled if pad is floated or not connected.

DS20006023A-page 4



2018 Microchip Technology Inc.

DSC612

TEMPERATURE SPECIFICATIONS (Note

Parameters

Temperature Ranges

Junction Operating Temperature

Storage Temperature Range

Lead Temperature

Note 1:

—

–55

—

+260

+150

—

°C

—

Soldering, 40s

Sym.

Min.

Typ.

Max.

Units

Conditions

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., T

, T



). Exceeding the

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.



2018 Microchip Technology Inc.

DS20006023A-page 5

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DSC612RI2A-012PT

DSC612RI2A-012PT概述

DSC612RI2A-012PT规格参数

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