Datasheet> 器件分类 > 无源元件> 电容器> C2225Q163J1GAL7800

文档预览

C2225Q163J1GAL7800: 产品描述Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, BP, -/+30ppm/Cel TC, 0.016uF, 2225,; 产品类别无源元件电容器; 文件大小160KB，共8页; 制造商KEMET(基美); 官网地址http://www.kemet.com

下载文档详细参数全文预览

C2225Q163J1GAL7800概述

Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, BP, -/+30ppm/Cel TC, 0.016uF, 2225,

C2225Q163J1GAL7800规格参数

参数名称	属性值
是否Rohs认证	不符合
Objectid	926667617
包装说明	, 2225
Reach Compliance Code	not_compliant
ECCN代码	EAR99
YTEOL	5.25
电容	0.016 µF
电容器类型	CERAMIC CAPACITOR
介电材料	CERAMIC
高度	2.03 mm
JESD-609代码	e0
长度	5.59 mm
多层	Yes
负容差	5%
端子数量	2
最高工作温度	125 °C
最低工作温度	-55 °C
封装形式	SMT
包装方法	TR, Plastic, 7 Inch
正容差	5%
额定（直流）电压（URdc）	100 V
系列	C2225(BP,100V)
尺寸代码	2225
温度特性代码	BP
温度系数	30ppm/Cel ppm/°C
端子面层	Tin/Lead (Sn70Pb30) - with Nickel (Ni) barrier
宽度	6.35 mm

文档预览

下载PDF文档

全文
预览

CERAMIC HIGH RELIABILITY

GENERAL INFORMATION GR900 SERIES

HIGH RELIABILITY — GR900

GR900 capacitors are intended for use in any application where

the chance of failure must be reduced to the lowest possible

level. While any well-made multilayer ceramic capacitor is an

inherently reliable device, GR900 capacitors receive special

attention in all phases of manufacture including:

— Raw Materials Selection

— Special Designs

— Clean Room Production

— Individual Batch Testing

— C-SAM (when applicable)

— Singular Batch Identity is Maintained

— Destructive Physical Analysis

These parts are well worth the added investment in comparison

to the cost of a device or system failure.

Typical applications include:

Medical, Aerospace, Communication Satellites, Radar, Guidance

Systems.

SCREENING AND SAMPLE TESTS

Each batch receives the following testing/inspections:

Preliminary:

1. Destructive Physical Analysis: (DPA) - A sample is pulled from

each lot and examined per EIA-469 and KEMET’s strict internal

void and delamination criteria. Sampling plan is per MIL-PRF-123.

2. C-SAM - May be performed on batches failing to meet the

DPA criteria for removal of marginal product. Not required on

each lot.

Group A

1. Thermal Shock

— Materials used in the construction of mul-

tilayer ceramic capacitors possess various thermal coefficients of

expansion. To assure maximum uniformity, each part is temper-

ature cycled in accordance to MIL-STD-202, Method 107,

Condition A with Step 3 being 125°C. Number of cycles shall be

20 (100% of lot).

2. Voltage Conditioning

— One of the most strenuous environ-

ments for any capacitor is the high temperature/high voltage test.

All units are subject to twice-rated voltage to the units at the max-

imum rated temperature of 125°C for a minimum of 168 hours

and a maximum of 264 hours. The voltage conditioning may be

terminated at any time during 168 hours to 264 hours time inter-

val that confirmed failures meet the requirements of the PDA dur-

ing the last 48 hours of 1 unit or .4% (100% of lot).

Optional Voltage Conditioning (Accelerated Voltage

Conditioning)

— All conditions of the standard voltage condi-

tioning apply with the exception of increased voltage and

decreased test time. Refer to MIL-PRF-123 for the proper formula.

*Step 5 is performed on chips at this point (100% of lot).

3. Dielectric Withstanding Voltage

— 250% of the dc rated volt-

age at 25°C (100% of lot).

4. Insulation Resistance

— The 25°C measurement with rated

voltage applied shall be the lesser of 100 GΩ or 1000 megohm-

microfarads (100% of lot).

*5. Insulation Resistance

— The 125°C measurement with

rated voltage applied shall be the lesser of 10 GΩ or 100

megohm-microfarads (100% of lot). For chips, 125°C IR is per-

formed prior to Step 3 above.

6. Storage

at 150°C for 2 hours minimum without voltage applied

followed by a 12-hour minimum stabilization period (temperature

characteristic BX only).

7. Capacitance

— Shall be within specified tolerance at 25°C

(100% of lot). (Aging phenomenon is taken into account for BX

dielectric to obtain capacitance.)

8. Dissipation Factor

— Shall not exceed 2.5% for X7R (BX)

dielectric, 0.15% for C0G (BP) dielectric at 25°C. (100% of lot.)

9. Percent Defective Allowable (PDA)

— The overall PDA is 8%

for parts outside the MIL-PRF-123 values. The PDA is per MIL-

PRF-123 for all parts that are valid MIL-PRF-123 values. The PD

includes steps 1 through 8 above with the following exceptions.

Capacitance exclusion - capacitance values no more than 5% or

.5pF, whichever is greater for BX characteristic or 1% or .3pF,

whichever is greater for BP characteristic beyond specified toler-

ance limit, shall be removed from the lot but shall not be consid-

ered defective for determination of the PD.

Insulation Resistance at 25°C — Product which is not acceptable

for twice the military limit but is acceptable per the military limit,

is removed from the lot but shall not be considered defective for

determination of the PD.

10. Visual and Mechanical Examination

— Performed per MIL-

PRF-123 criteria.

11. Radiographic Examination (Leaded Devices Only)

—

Radial devices receive a one-plane X-ray.

12. Destructive Physical Analysis (DPA)

— A sample is exam-

ined on each lot per EIA-469. Sampling Plan is per MIL-PRF-123.

STANDARD PACKAGING

All products are packaged in trays except C512 capacitors which

are packaged 1 piece per bag.

DATA PACKAGE

A data package is sent with each shipment which contains:

Final Destructive Physical Analysis (DPA) report.

Certificate of Compliance stating that the parts meet all applic-

able requirements of the appropriate military specification to the

best failure level to which KEMET is approved.

Summary of Group A Testing.

推荐资源

DSPC6678的片上存储空间的分配机制: 嵌入式的设备如DSP上的栈空间是Kb级别，在函数内定义数组或申请空间都不能像linux下那样直接定义和申请，要么定义成全局的，要么指向一块划分好的空间，否则就会造成覆盖代码段等的问题。 ......; Aguilera DSP 与 ARM 处理器

pxa270+wince 5.0,SD卡中运行大型应用程序卡死: 系统如上:PXA270+WINCE5.0,系统目前存在如下问题: 1.播放存储在SD卡中的MP3歌曲,会隔一段时间(大概7s)左右就会出现不明显的卡顿 2.如果传输数据,如拷贝到SD卡或者从SD卡拷出来,都回影响系 ......; fjiahao 嵌入式系统

AM335X套件官方详解及从视频中抓出的网址: 套件手册 http://processors.wiki.ti.com/index.php/AM335xStarterKitHardwareUsersGuide AM335x Starter Kit详解 http://processors.wiki.ti.com/index.php/AM335x_Starter_Kit#Hardwar ......; 柠檬酸钠 DSP 与 ARM 处理器

咨询一个关于f_mount()比较傻的问题！: 当FATFS同时挂载了FLASH(spi）芯片和U盘时，f_mount(&fs, "0:", 0);系统如何知道这个“0：”是挂载flash芯片，还是挂载U盘？ ...; mini_peng stm32/stm8

M8 学习资料: 从网上找到的。...; hizzx 单片机

verilog 中if的使用，以及input output inout 使用: if 语句只能用于过程块中，所谓过程块语句是指由initial和always语句引导的执行语句集合。除了这两块语句引导的begin end块中可以编译条件语句外，模块的其他地方都不能编写。 input 不能被 ......; eeleader FPGA/CPLD

器件捷径: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多