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SM572168088E4G6

产品描述DRAM
产品类别存储    存储   
文件大小232KB,共25页
制造商SMART Modular Technology Inc
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SM572168088E4G6概述

DRAM

SM572168088E4G6规格参数

参数名称属性值
Objectid110131203
包装说明,
Reach Compliance Codeunknown
ECCN代码EAR99

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SMART
Features
®
SM5721680UUEUGU
September 23, 1997
Modular Technologies
128MByte (16M x 72) DRAM Module - 8Mx8 based
168-pin DIMM, Buffered, ECC
Part Numbers
SM57216800UEUGU
SM57216801UEUGU
SM57216808UEUGU
SM57216809UEUGU
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Standard
:
JEDEC
Configuration
:
ECC
Access Time
:
50/60/70ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
4K/8K
Device Physicals
:
400mil SOJ/TSOP
Lead Finish
:
Gold
Length x Height
:
5.250" x 1.100"
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390052-1 (5.0V)/390052-4 (3.3V)
Note: Refer last page for all "U” options.
Related Products
SM5721640UUEUGU
:
16Mx72,
16x4 based.
Functional Diagram
RAS0#
CAS0#
WE0#
OE0#
A0
8Mx40
Block
8Mx32
Block
RAS2#
CAS4#
WE2#
OE2#
B0
RAS1#
CAS1#
8Mx40
Block
8Mx32
Block
RAS3#
CAS5#
DQ0~DQ39
DQ40~DQ71
DQ0~DQ71
Notes : 1. A0~A11/A12 are connected to all DRAMs through buffers
(A12 is NC for 4K refresh module).
2. All signals including PDs (with exception of RAS#, Data and IDs)
are buffered.
3. Each 8x40 Block comprises of five 8Mx8 DRAMs and each
8Mx32 Block comprises of four 8Mx8 DRAMs.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
V
CC
V
SS
Decoupling capacitors
to all devices.
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1

 
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