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A2F060M3F-CS288I

产品描述Field Programmable Gate Array, 1536 CLBs, 60000 Gates, CMOS, PBGA288
产品类别可编程逻辑器件    可编程逻辑   
文件大小9MB,共182页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
下载文档 详细参数 全文预览

A2F060M3F-CS288I概述

Field Programmable Gate Array, 1536 CLBs, 60000 Gates, CMOS, PBGA288

A2F060M3F-CS288I规格参数

参数名称属性值
Objectid4016551234
包装说明0.50 MM PITCH, CSP-288
Reach Compliance Codecompliant
YTEOL7
JESD-30 代码S-PBGA-B288
长度11 mm
可配置逻辑块数量1536
等效关口数量60000
输入次数112
逻辑单元数量1536
输出次数112
端子数量288
最高工作温度100 °C
最低工作温度-40 °C
组织1536 CLBS, 60000 GATES
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状SQUARE
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
座面最大高度1.05 mm
最大供电电压1.575 V
最小供电电压1.425 V
标称供电电压1.5 V
表面贴装YES
技术CMOS
端子形式BALL
端子节距0.5 mm
端子位置BOTTOM
宽度11 mm

文档预览

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Revision 7
SmartFusion Customizable System-on-Chip (cSoC)
Microcontroller Subsystem (MSS)
Hard 100 MHz 32-Bit ARM
®
Cortex™-M3
– 1.25 DMIPS/MHz Throughput from Zero Wait State
Memory
– Memory Protection Unit (MPU)
– Single Cycle Multiplication, Hardware Divide
– JTAG Debug (4 wires), Serial Wire Debug (SWD, 2
wires), and Single Wire Viewer (SWV) Interfaces
Internal Memory
– Embedded Nonvolatile Flash Memory (eNVM), 128
Kbytes to 512 Kbytes
– Embedded High-Speed SRAM (eSRAM), 16 Kbytes
to 64 Kbytes, Implemented in 2 Physical Blocks to
Enable Simultaneous Access from 2 Different
Masters
Multi-Layer AHB Communications Matrix
– Provides up to 16 Gbps of On-Chip Memory
Bandwidth,
1
Allowing Multi-Master Schemes
10/100 Ethernet MAC with RMII Interface
2
Programmable External Memory Controller, Which
Supports:
– Asynchronous Memories
– NOR Flash, SRAM, PSRAM
– Synchronous SRAMs
Two I
2
C Peripherals
Two 16550 Compatible UARTs
Two SPI Peripherals
Two 32-Bit Timers
32-Bit Watchdog Timer
8-Channel DMA Controller to Offload the Cortex-M3
from Data Transactions
Clock Sources
– 32 KHz to 20 MHz Main Oscillator
– Battery-Backed 32 KHz Low Power Oscillator with
Real-Time Counter (RTC)
– 100 MHz Embedded RC Oscillator; 1% Accurate
– Embedded Analog PLL with 4 Output Phases (0, 90,
180, 270)
Based on proven ProASIC
®
3 FPGA Fabric
Low Power, Firm-Error Immune 130-nm, 7-Layer Metal,
Flash-Based CMOS Process
Nonvolatile, Live at Power-Up, Retains Program When
Powered Off
350 MHz System Performance
Embedded SRAMs and FIFOs
– Variable Aspect Ratio 4,608-Bit SRAM Blocks
– x1, x2, x4, x9, and x18 Organizations
– True Dual-Port SRAM (excluding x18)
– Programmable Embedded FIFO Control Logic
Secure ISP with 128-Bit AES via JTAG
FlashLock
®
to Secure FPGA Contents
Five Clock Conditioning Circuits (CCCs) with up to 2
Integrated Analog PLLs
– Phase Shift, Multiply/Divide, and Delay Capabilities
– Frequency: Input 1.5–350 MHz, Output 0.75 to
350 MHz
Programmable Analog
Analog Front-End (AFE)
Up to Three 12-Bit SAR ADCs
– 500 Ksps in 12-Bit Mode
– 550 Ksps in 10-Bit Mode
– 600 Ksps in 8-Bit Mode
Internal 2.56 V Reference or Optional External
Reference
One First-Order
ΣΔ
DAC (sigma-delta) per ADC
– 12-Bit 500 Ksps Update Rate
Up to 5 High-Performance Analog Signal Conditioning
Blocks (SCB) per Device, Each Including:
– Two High-Voltage Bipolar Voltage Monitors (with 4
input ranges from ±2.5 V to –11.5/+14 V) with 1%
Accuracy
– High Gain Current Monitor, Differential Gain = 50, up
to 14 V Common Mode
– Temperature Monitor (Resolution = ¼°C in 12-Bit
Mode; Accurate from –55°C to 150°C)
Up to Ten High-Speed Voltage Comparators
(t
pd
= 15 ns)
Offloads Cortex-M3–Based MSS from Analog
Initialization and Processing of ADC, DAC, and SCBs
Sample Sequence Engine for ADC and DAC Parameter
Set-Up
Post-Processing Engine for Functions such as Low-
Pass Filtering and Linear Transformation
Easily Configured via GUI in Libero
®
Integrated Design
(IDE) Software
FPGA I/Os
– LVDS, PCI, PCI-X, up to 24 mA IOH/IOL
– Up to 350 MHz
MSS I/Os
– Schmitt Trigger, up to 6 mA IOH, 8 mA IOL
– Up to 180 MHz
Single 3.3 V Power Supply with On-Chip 1.5 V Regulator
External 1.5 V Is Allowed by Bypassing Regulator
(digital VCC = 1.5 V for FPGA and MSS, analog VCC =
3.3 V and 1.5 V)
Analog Compute Engine (ACE)
High-Performance FPGA
I/Os and Operating Voltage
1 Theoretical maximum
2 A2F200 and larger devices
August 2011
© 2011 Microsemi Corporation
I
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