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SG-636SCW32.00001MB3:ROHS

产品描述IC,CRYSTAL OSCILLATOR,1-CHANNEL,32.0001MHZ-135MHZ,DIP,4PIN,PLASTIC
产品类别无源元件    振荡器   
文件大小329KB,共5页
制造商Seiko Epson Corporation
标准
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SG-636SCW32.00001MB3:ROHS概述

IC,CRYSTAL OSCILLATOR,1-CHANNEL,32.0001MHZ-135MHZ,DIP,4PIN,PLASTIC

SG-636SCW32.00001MB3:ROHS规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
Objectid1148242189
包装说明SMDIP4,.23,200
Reach Compliance Codecompliant
JESD-609代码e3/e6
安装特点SURFACE MOUNT
端子数量4
最大工作频率135 MHz
最小工作频率32.0001 MHz
标称工作频率32.0001 MHz
最高工作温度70 °C
最低工作温度-20 °C
最大输出低电流8 mA
封装主体材料PLASTIC/EPOXY
封装等效代码SMDIP4,.23,200
电源3.3 V
认证状态Not Qualified
最大压摆率28 mA
标称供电电压3.3 V
表面贴装YES

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Crystal oscillator
CRYSTAL OSCILLATOR
SPXO
SG - 636
series
•Frequency
range
•Supply
voltage
•Function
•Thickness
•Lead(Pb)-free
:
:
:
:
:
2.21675 MHz to 135 MHz
2.5 V / 3.3 V / 5.0 V
Output enable(OE) Standby(
ST
)
2.7 mm Max.
Contains high melting temperature type
Actual size
solder (Pb85 %) exempted by RoHS directive.
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage
Temperature temperature
range
Operating
temperature
Frequency tolerance
Current consumption
Output disable current
Stand-by current
Symmetry
High output voltage
Low output voltage
Output load condition
(TTL)
Output load condition
(CMOS)
Output enable /
disable input voltage
Output rise and fall time
Oscillation start up time
Frequency aging
Symbol
f
0
V
CC
T_stg
T_use
F_tol(osc)
I
CC
I_dis
I_std
SYM
V
OH
V
OL
L_TTL
L_CMOS
V
IH
V
IL
tr / tf
10 TTL Max.
50 pF Max.
Specifications
PTF
PH
PCE
/
SCE
2.21675 MHz
41.001 MHz
2.21675 MHz
to 41.000 MHz
to 70.000 MHz
to 40.000 MHz
5.0 V
±0.5
V
3.3 V
±0.3
V
-55
°C
to +100
°C
-20
°C
to +70
°C
C:
±100
× 10
-6
17 mA Max.
35 mA Max.
9 mA Max.
5 mA Max.
10 mA Max.
20 mA Max.
5 mA Max.
3 mA Max.
-
2
µA
Max.
-
40 % to 60 %
45 % to 55 %
-
45 % to 55 %
V
CC
-0.4 V Min.
0.4 V Max.
-
-20
°C
to +70
°C
No load condition
OE=GND
ST
=GND(SCE)
CMOS load:50 % V
CC
level
TTL load: 1.4 V level
I
OH
=-8 mA(PTF)/-4 mA(PH,SCE,PCE),
/-3.2 mA(PDE)
I
OL
=16 mA(PTF)/4mA(PH,SCE,PCE)
/3.2 mA(PDE)
L_CMOS
15 pF
PDE
2.21675 MHz
to 40.000 MHz
2.5 V
±0.25
V
Remarks
Stored as bare product after unpacking
t
OSC
F_aging
20 pF Max.(≤55 MHz)
30 pF Max.
15 pF Max.
15 pF Max.(>55 MHz)
2.0 V Min.
80 % V
CC
Min.
0.8 V Max.
20 % V
CC
Max.
7 ns Max.
5 ns Max.
-
5 ns Max.
4 ms Max.
10 ms Max.
4 ms Max.
±5 ×
10
-6
/ year Max.
OE Terminal,
ST
Terminal (SCE)
CMOS load:20 % V
CC
to 80 % V
CC
level
TTL load:0.4 V to 2.4 V level
Time at minimum supply voltage to be 0 s
+25
°C,
V
CC
=5.0 V/3.3 V/2.5 V, First year
Specifications (characteristics)
Item
Symbol
PTG
Output frequency range
f
0
Supply voltage
V
CC
Storage
T_stg
Temperature temperature
range
Operating
T_use
temperature
Frequency tolerance
F_tol(osc)
Current consumption
I
CC
Output disable current
I_dis
Stand-by current
I_std
Symmetry
High output voltage
Low output voltage
Output load condition
Output enable /
disable input voltage
Output rise and fall time
Oscillation start up time
Frequency aging
SYM
V
OH
V
OL
L_CMOS
V
IH
V
IL
tr / tf
-
40 % to 60 %
2.4 V Min.
-
Specifications
PHG
2.21675 MHz to 33.000 MHz
*1
4.5 V to 5.5 V
-55
°C
to +100
°C
-20
°C
to +70
°C
B:
±50 ×
10
-6
25 mA Max.
20 mA Max.
-
C:
±100 ×
10
-6
12 mA Max.
10 mA Max.
50
µA
Max.
-20
°C
to +70
°C
No load condition
OE=GND (PTG,PHG,PCG)
ST
=GND (SCG)
50 % V
CC
level, L_CMOS=25 pF
1.4 V level, L_CMOS=25 pF
I
OH
=-8 mA
I
OH
=-16 mA
I
OL
=8 mA
I
OL
=16 mA
OE Terminal ,
ST
Terminal
20 % V
CC
to 80 % V
CC
level, L_CMOS
25 pF
TTL load:0.4 V to 2.4 V level, L_CMOS
25 pF
t=0 at 90 % V
CC
+25
°C,
V
CC
=5.0 V/ 3.3 V, First year
PCG
/
SCG
2.7 V to 3.6 V
Stored as bare product after unpacking
Remarks
t
OSC
F_aging
-
2.4 ns Max.
45 % to 55 %
-
-
V
CC
-0.4 V Min.
V
CC
-0.4 V Min.
-
-
0.4 V Max.
-
0.4 V Max.
25 pF Max.
2.0 V Min.
70 % V
CC
Min.
0.8 V Max.
20 % V
CC
Max.
3.4 ns Max.
4 ns Max.
-
12 ms Max.
±5 ×
10
-6
/ year Max.
*1
4.1250 MHz < f
o
< 4.4336 MHz, 8.2500 MHz < f
o
< 8.8672 MHz, 16.500 MHz < f
o
< 17.7344 MHz : Unavailable
38
http://www.epsontoyocom.co.jp

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