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BC337A_J35Z

产品描述trans npn eptxl 45v 800ma TO-92
产品类别半导体    分立半导体   
文件大小23KB,共3页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准  
下载文档 详细参数 全文预览

BC337A_J35Z概述

trans npn eptxl 45v 800ma TO-92

BC337A_J35Z规格参数

参数名称属性值
Datasheets
BC337-38
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
系列
Packaging
Bulk
Transistor TypeNPN
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Power - Max625mW
Frequency - Transiti100MHz
Mounting TypeThrough Hole
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

文档预览

下载PDF文档
BC337/338
BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328
TO-92
1
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Parameter
Collector-Emitter Voltage
: BC337
: BC338
Collector-Emitter Voltage
: BC337
: BC338
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
30
45
25
5
800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC337
: BC338
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10mA, I
B
=0
Min.
45
25
I
C
=0.1mA, V
BE
=0
50
30
I
E
=0.1mA, I
C
=0
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA, f=50MHz
V
CB
=10V, I
E
=0, f=1MHz
100
12
100
60
5
2
2
100
100
630
0.7
1.2
V
V
MHz
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002

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