Ordering number:EN4890
FX607
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching,
Motor Driver Applications
Features
· Composite type composed of two low ON-resistance
N-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX607 is formed with two chips, each being
equivalent to the 2SK2260, placed in one package.
· Matched pair characteristics.
Package Dimensions
unit:mm
2120
[FX607]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
PT
Tch
Tstg
PW
≤
10µs, duty cycle
≤
1%
Conditions
Ratings
150
±20
1.2
4.8
6
Unit
V
V
A
A
W
W
W
Tc=25˚C, 1 unit
Mounted on ceramic board
Mounted on ceramic board
(750mm
2
×0.8mm)
(750mm
2
×0.8mm)
1 unit
1.5
2
150
–55 to +150
˚C
˚C
· Marking:607
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO(KOTO) TA-0113 No.4890-1/4
FX607
Continued from preceding page.
Electrical Characteristics
at Ta = 25˚C
Parameter
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0
VDS=150V, VGS=0
VGS=±18V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=600mA
ID=600mA, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=1.2A, VGS=0
1.5
0.8
1.1
1.6
80
25
8.5
10
15
50
30
1.0
2.2
Conditions
Ratings
min
150
100
±10
2. 5
typ
max
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
No.4890-2/4
FX607
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4890-4/4
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
