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PN4249_D26Z

产品描述trans GP pnp 60v 500ma TO-92
产品类别半导体    分立半导体   
文件大小293KB,共7页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准  
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PN4249_D26Z概述

trans GP pnp 60v 500ma TO-92

PN4249_D26Z规格参数

参数名称属性值
Datasheets
PN4249
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
系列
Packaging
Tape & Reel (TR)
Transistor TypePNP
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100µA, 5V
Power - Max625mW
Mounting TypeThrough Hole
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3

文档预览

下载PDF文档
PN4249
Discrete POWER & Signal
Technologies
PN4249
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
5.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN4249
625
5.0
83.3
200
Units
mW
mW/
°
C
°
C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

PN4249_D26Z相似产品对比

PN4249_D26Z PN4249_D75Z PN4249_D74Z PN4249D26Z
描述 trans GP pnp 60v 500ma TO-92 trans GP pnp 60v 500ma TO-92 trans GP pnp 60v 500ma TO-92 Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
Standard Package 2,000 2,000 2,000 -
Category Discrete Semiconductor Products Discrete Semiconductor Products Discrete Semiconductor Products -
Family Transistors (BJT) - Single Transistors (BJT) - Single Transistors (BJT) - Single -
系列
Packaging
Tape & Reel (TR) Tape & Box (TB) Tape & Box (TB) -
Transistor Type PNP PNP PNP -
Current - Collector (Ic) (Max) 500mA 500mA 500mA -
Voltage - Collector Emitter Breakdown (Max) 60V 60V 60V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA 250mV @ 500µA, 10mA 250mV @ 500µA, 10mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100µA, 5V 100 @ 100µA, 5V 100 @ 100µA, 5V -
Power - Max 625mW 625mW 625mW -
Mounting Type Through Hole Through Hole Through Hole -
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads -
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 -

 
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