BYW72 / 73 / 74 / 75 / 76
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
e2
949588
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case:
SOD-64 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 858 mg
Applications
Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Parts Table
Part
BYW72
BYW73
BYW74
BYW75
BYW76
Type differentiation
V
R
= 200 V; I
FAV
= 3 A
V
R
= 300 V; I
FAV
= 3 A
V
R
= 400 V; I
FAV
= 3 A
V
R
= 500 V; I
FAV
= 3 A
V
R
= 600 V; I
FAV
= 3 A
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYW72
BYW73
BYW74
BYW75
BYW76
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
I
(BR)R
= 0.4 A
t
p
= 10 ms, half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
T
j
= T
stg
E
R
Value
200
300
400
500
600
100
15
3
- 55 to + 175
10
Unit
V
V
V
V
V
A
A
A
°C
mJ
Document Number 86050
Rev. 1.6, 13-Apr-05
www.vishay.com
1
BYW72 / 73 / 74 / 75 / 76
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing
25 mm
Symbol
R
thJA
R
thJA
Value
25
70
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse recovery time
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
Test condition
Symbol
V
F
I
R
I
R
t
rr
Min
Typ.
0.95
1
60
Max
1.1
5
150
200
Unit
V
µA
µA
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
–Therm. Resist. Junction/ Ambient ( K/W)
40
3.5
I
FAV
–Average Forward Current( A )
30
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sinewave
R
thJA
= 45 K/W
l = 10 mm
20
l
l
10
T
L
= constant
0
0
5
10
15
20
25
30
l – Lead Length ( mm )
94 9548
16356
60 80 100 120 140 160 180
T
amb
– Ambient Temperature (°C )
40
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100
– Forward Current (A)
I
R
– Reverse Current (A)
1000
V
R
= V
RRM
10
T
j
= 175 °C
1
T
j
= 2 5°C
0.100
0.010
100
10
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
16355
V
F
– Forward Voltage ( V )
I
F
1
25
16357
50
75
100 125 150 175
T
j
– Junction Temperature (°C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
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2
Document Number 86050
Rev. 1.6, 13-Apr-05
BYW72 / 73 / 74 / 75 / 76
Vishay Semiconductors
P – Reverse Power Dissipation ( mW )
R
300
C
D
– Diode Capacitance ( pF )
90
V
R
= V
RRM
80
70
60
50
40
30
20
10
f = 1 MHz
250
200
150
100
50
0
25
50
75
100 125 150 175
T
j
– Junction Temperature (°C )
P
R
–Limit
@100 % V
R
P
R
–Limit
@80 % V
R
0
0.1
16359
16358
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Z
thp
- Thermal Resistance f. Pulse Cond. (K/W
Figure 6. Diode Capacitance vs. Reverse Voltage
1000
V
RRM
= 600 V
R
thJA
= 70 K/W
100
t
p
/T= 0.5
t
p
/T= 0.2
10
t
p
/T= 0.1
t
p
/T= 0.05
0.02
1
10
-4
t
p
/T= 0.01
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
p
- Pulse Length ( s )
10
0
10
1
10
2
I
FRM
- Repetitive Peak
Forward Current ( A )
70°C
T
amb
= 25°C
100
°C
45°C
94 9562
Figure 7. Thermal Response
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
ISO Method E
1.35 (0.053) max.
26(1.014) min.
4.0 (0.156) max.
26 (1.014) min.
94 9587
Document Number 86050
Rev. 1.6, 13-Apr-05
www.vishay.com
3
BYW72 / 73 / 74 / 75 / 76
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 86050
Rev. 1.6, 13-Apr-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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