BCR569
PNP Silizium Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 4.7k )
C
3
3
Thermal Resistance
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Junction - soldering point
1)
2
1
VPS05161
R
1
1
B
2
E
EHA07180
Type
BCR569
Maximum Ratings
Parameter
Marking
XLs
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Value
50
50
5
30
500
330
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
T
S
= 79 °C
Junction temperature
Storage temperature
mA
mW
°C
R
thJS
215
K/W
Jul-23-2001
BCR569
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
DC current gain 1)
I
C
= 50 mA,
V
CE
= 5 V
Collector-emitter saturation voltage1)
I
C
= 50 mA,
I
B
= 2.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on Voltage
I
C
= 10 mA,
V
CE
= 0.3 V
Input resistor
V
i(on)
R
1
0.5
3.2
-
4.7
1.5
6.2
V
i(off)
0.4
-
0.8
V
CEsat
-
-
0.3
h
FE
120
-
630
I
CBO
-
-
100
V
(BR)EBO
5
-
-
V
(BR)CBO
50
-
-
V
(BR)CEO
50
-
-
typ.
max.
Unit
V
V
nA
-
V
V
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
-
150
-
MHz
1) Pulse test: t < 300 s; D < 2%
2
Jul-23-2001
k
BCR569
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-Emitter Saturation Voltage
V
CEsat
=
f
(I
C
),
h
FE
= 20
10
3
-
mA
h
FE
10
2
10
2
10
1
I
C
10
1
10
0 -1
10
0
1
2
10
10
10
mA
10
3
10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
I
C
V
CEsat
Input on Voltage
V
i(on)
=
f
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
3
mA
Input off voltage
V
i(off)
=
f
(I
C
)
V
CE
= 5V (common emitter configuration)
10
1
mA
10
2
10
0
I
C
10
1
10
0
10
-1
10
-1
10
-2 -1
10
I
C
0
1
10
10
V
10
2
10
-2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
V
i(on)
V
i(off)
3
Jul-23-2001
BCR569
Total power dissipation
P
tot
=
f
(T
S
)
400
mW
300
P
tot
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
f
(t
p
)
10
3
K/W
10
4
-
10
2
P
totmax
/ P
totDC
10
3
10
1
10
2
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
4
Jul-23-2001
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