RN4612
TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process)
(Transistor with Built-in Bias Resistor)
RN4612
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 22kΩ
(Q1, Q2 Common)
JEDEC
―
SC-74
2-3N1A
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
JEITA
TOSHIBA
Weight: 15 mg (typ.)
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
5
100
Unit
V
V
V
mA
Start of commercial production
2002-12
1
2014-03-01
RN4612
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
300
150
−55
to 150
Unit
mW
°C
°C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Note:
Marking
Equivalent Circuit
(Top View)
2
2014-03-01
RN4612
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−1mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
Min
―
―
120
―
―
―
Typ.
―
―
―
−0.1
200
3
Max
−100
−100
400
−0.3
―
6
Unit
nA
nA
―
V
MHz
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0, f = 1 MHz
Min
―
―
120
―
―
―
Typ.
―
―
―
0.1
250
3
Max
100
100
700
0.3
―
6
Unit
nA
nA
―
V
MHz
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Input resistor
Symbol
R1
Test
Circuit
―
Test Condition
―
Min
15.4
Typ.
22
Max
28.6
Unit
kΩ
3
2014-03-01
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