BC807.../BC808...
PNP Silicon AF Transistor
•
For general AF applications
•
High collector current
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary type:
BC817.../W, BC818.../W (NPN)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
Type
BC807-16
BC807-16W
BC807-25
BC807-25W
BC807-40
BC807-40W
BC808-25
BC808-25W
BC808-40
BC808-40W
1
Pb-containing
Marking
5As
5As
5Bs
5Bs
5Cs
5Cs
5Fs
5Fs
5Gs
5Gs
Pin Configuration
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
package may be available upon special request
1
2007-06-08
BC807.../BC808...
Maximum Ratings
Parameter
Collector-emitter voltage
BC807...
BC808...
Collector-base voltage
BC807...
BC808...
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
79 °C BC807, BC808
T
S
≤
130 °C BC807W, BC808W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BC807, BC808
BC807W, BC808W
1
For
Symbol
V
CEO
Value
45
25
Unit
V
V
CBO
50
30
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
330
250
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
≤
215
≤
80
Unit
K/W
°C
5
500
1000
100
200
mW
mA
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-06-08
BC807.../BC808...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BC807...
I
C
= 10 mA,
I
B
= 0 , BC808...
45
25
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC807...
I
C
= 10 µA,
I
E
= 0 , BC808...
50
30
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.1
50
100
nA
-
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
-
DC current gain
1)
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp. 16
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp. 25
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
grp. 40
I
C
= 500 mA,
V
CE
= 1 V
100
160
250
40
V
CEsat
V
BEsat
160
250
350
-
-
-
250
400
630
-
0.7
1.2
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
Base emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
1
Pulse
-
-
test: t < 300µs; D < 2%
3
2007-06-08
BC807.../BC808...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
60
-
C
cb
-
8
-
pF
f
T
-
200
-
MHz
Symbol
min.
Values
typ.
max.
Unit
4
2007-06-08
BC807.../BC808...
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
h
FE
-grp. 16
10
3
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
h
FE
-grp. 25
10
3
h
FE
10
2
h
FE
10
2
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10
1 -5
10
10
-4
10
-3
10
-2
10
-1
A
10
0
10
1 -5
10
10
-4
10
-3
10
-2
10
-1
0
A
10
I
C
I
C
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
h
FE
-grp. 40
10
3
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 10
10
3
EHP00215
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
2
h
FE
5
10
2
105 °C
85 °C
65 °C
25 °C
-40 °C
10
1
5
10
0
5
10
1 -5
10
10
-4
10
-3
10
-2
10
-1
A
10
0
10
-1
0
0.2
0.4
0.6
V
0.8
I
C
V
CEsat
5
2007-06-08
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