RN1107ACT ~ RN1109ACT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107ACT, RN1108ACT, RN1109ACT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Extra small package(CST3) is applicable for extra high density
fabrication.
Incorporating a bias resistor into a transistor reduces the number of parts,
which enables the manufacture of ever more compact equipment and
saves assembly cost.
Complementary to RN2107ACT to RN2109ACT
Unit: mm
TOP View
0.6±0.05
0.5±0.03
0.25±0.03
３
0.65±0.02
１
0.25±0.03
２
0.35±0.02
0.15±0.03
1.0±0.05
•
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1107ACT
RN1108ACT
R2
RN1109ACT
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
0.05±0.03
B
R1
CST3
JEDEC
JEITA
TOSHIBA
1: BASE
2: EMITTER
3: COLLECTOR
―
―
2-1J1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1107ACT to RN1109ACT
RN1107ACT
Emitter-base voltage
RN1108ACT
RN1109ACT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107ACT to RN1109ACT
I
C
P
C
(Note1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
80
100
150
−55
to 150
V
Weight: 0.75 mg (typ.)
Unit
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1 : Mounted on FR4 board (10 mm
×
10 mm
×
1 mmt)
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
2004-08
1
2014-03-01
RN1107ACT ~ RN1109ACT
RN1107ACT
IC - VI (ON)
10000
COLLECTOR CURRENT IC
(μA
）
(uA)
RN1107ACT
IC - VI (OFF)
100
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE = 5V
10
Ta=100°C
1000
Ta=100°C
25
-25
1
25
-25
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
10
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE
VI (OFF) (V)
RN1108ACT
100
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
10000
RN1108ACT
IC - VI (OFF)
(μA
）
COLLECTOR CURRENT IC (uA)
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE= 5V
Ta=100°C
1000
10
Ta=100°C
25
100
1
25
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
-25
25
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE
VI (OFF) (V)
RN1109ACT
100
COLLECTOR CURRENT IC (mA)
IC- VI (ON)
10000
COLLECTOR CURRENT IC
(μA
）
(uA)
RN1109ACT
IC - VI (OFF)
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE= 5V
10
1000
Ta=100°C
25
-25
Ta=100°C
1
25
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
100
10
0
1
2
3
4
5
INPUT VOLTAGE
VI (OFF) (V)
3
2014-03-01
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