电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BCR 129T E6327

产品描述trans prebias npn 250mw sc75
产品类别半导体    分立半导体   
文件大小488KB,共10页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准  
下载文档 详细参数 选型对比 全文预览

BCR 129T E6327概述

trans prebias npn 250mw sc75

BCR 129T E6327规格参数

参数名称属性值
Datasheets
BCR129 (2006)
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
系列
Packaging
Tape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti150MHz
Power - Max250mW
Mounting TypeSurface Mou
封装 / 箱体
Package / Case
SC-75, SOT-416
Supplier Device PackagePG-SC-75
Other NamesBCR129TE6327XTSP000012800

文档预览

下载PDF文档
BCR129.../SEMH4
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=10kΩ)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR129/F/L3
BCR129T/W
C
3
BCR129S
SEMH4
C1
6
B2
5
E2
4
R
1
R
1
TR1
R
1
TR2
1
B
2
E
EHA07264
1
E1
2
B1
3
C2
EHA07265
Type
BCR129
BCR129F
BCR129L3
BCR129S
BCR129T
BCR129W
SEMH4
Marking
WVs
WVs
WV
WVs
WVs
WVs
WV
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-17-2004

BCR 129T E6327相似产品对比

BCR 129T E6327 BCR 129L3 E6327
描述 trans prebias npn 250mw sc75 trans prebias npn 250mw tslp-3
Standard Package 3,000 15,000
Category Discrete Semiconductor Products Discrete Semiconductor Products
Family Transistors (BJT) - Single, Pre-Biased Transistors (BJT) - Single, Pre-Biased
系列
Packaging
Tape & Reel (TR) Tape & Reel (TR)
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) (Ohms) 10k 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
Frequency - Transiti 150MHz 150MHz
Power - Max 250mW 250mW
Mounting Type Surface Mou Surface Mou
封装 / 箱体
Package / Case
SC-75, SOT-416 SC-101, SOT-883
Supplier Device Package PG-SC-75 PG-TSLP-3
Other Names BCR129TE6327XTSP000012800 BCR129L3E6327XTSP000014855

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1252  2055  825  2709  1445  3  18  5  50  1 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved