BCW67, BCW68
PNP Silicon AF Transistors
•
For general AF applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary types: BCW66... (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
Type
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
Marking
DAs
DBs
DCs
DFs
DGs
DHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1
2011-09-15
BCW67, BCW68
Maximum Ratings
Parameter
Collector-emitter voltage
BCW67
BCW68
Collector-base voltage
BCW67
BCW68
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation,
T
S
≤
79°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Symbol
V
CEO
Value
32
45
Unit
V
V
CBO
45
60
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
5
800
1
100
200
330
150
-65 ... 150
Value
≤
215
Unit
K/W
mA
A
mA
mW
°C
Junction - soldering point
1)
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-09-15
BCW67, BCW68
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BCW67
I
C
= 10 mA,
I
B
= 0 , BCW68
Unit
V
32
45
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BCW67
I
C
= 10 µA,
I
E
= 0 , BCW68
45
60
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 32 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0
V
CB
= 32 V,
I
E
= 0 ,
T
A
= 150 °C; BCW67
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C; BCW68
-
-
-
-
I
EBO
h
FE
-
-
-
-
-
0.02
0.02
20
20
20
nA
-
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
-
DC current gain
1)
I
C
= 100 µA,
V
CE
= 10 V,
h
FE
-grp.A/F
I
C
= 100 µA,
V
CE
= 10 V,
h
FE
-grp.B/G
I
C
= 100 µA,
V
CE
= 10 V,
h
FE
-grp.C/H
I
C
= 10 mA,
V
CE
= 1 V,
h
FE
-grp.A/F
I
C
= 10 mA,
V
CE
= 1 V,
h
FE
-grp.B/G
I
C
= 10 mA,
V
CE
= 1 V,
h
FE
-grp.C/H
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp.A/F
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp.B/G
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp.C/H
I
C
= 500 mA,
V
CE
= 2 V,
h
FE
-grp.A/F
I
C
= 500 mA,
V
CE
= 2 V,
h
FE
-grp.B/G
I
C
= 500 mA,
V
CE
= 2 V,
h
FE
-grp.C/H
35
50
80
75
120
180
100
160
250
35
60
100
-
-
-
-
-
-
160
250
350
-
-
-
-
-
-
-
-
-
250
400
630
-
-
-
3
2011-09-15
BCW67, BCW68
DC Electrical Characteristics
Parameter
Characteristics
Symbol
min.
Values
typ.
max.
Unit
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
V
-
-
-
-
-
-
0.3
0.7
1.25
2
Base emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
I
C
= 500 mA,
I
B
= 50 mA
V
BEsat
-
-
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
C
eb
-
-
-
200
6
60
-
-
-
MHz
pF
test: t < 300µs; D < 2%
4
2011-09-15
BCW67, BCW68
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 1 V
10
3
5
BCW 67/68
EHP00403
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
10
3
mA
BCW 67/68
EHP00402
100 ˚C
25 ˚C
h
FE
Ι
C
10
2
5
150 ˚C
25 ˚C
-50 ˚C
10
2
-50 ˚C
5
10
1
5
10
1
5
10
5
0
10
0
10
-1
5 10
0
5 10
1
5 10
2
mA 10
3
10
-1
0
200
400
600 mV 800
V
CE sat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ
(
V
BEsat
),
h
FE
= 10
10
3
mA
BCW 67/68
EHP00401
Collector cutoff current
I
CBO
=
ƒ
(
T
A
)
V
CBO
= 25 V
10
5
nA
BCW 67/68
EHP00400
Ι
C
10
2
5
150 ˚C
25 ˚C
-50 ˚C
Ι
CB0
10
4
5
10
3
10
1
5
5
10
2
5
max
10
0
typ
10
1
5
5
10
-1
0
1
2
3
V
4
10
0
0
50
100
˚C
T
A
150
V
BE sat
5
2011-09-15