MULTILAYER CERAMIC CAPACITORS
-
GUQ SERIES
-
ULTRA HIGH Q & LOW ESR SERIES
INTRODUCTION
-
MLCC Consists of a conducting material and electrodes.
To manufacture a chip-type SMT and achieve
miniaturization,high density and high efficiency, ceramic
condensers are used.
-
Cal-Chip GUQ series MLCC is used at high frequencies
and generally have a small temperature coefficient of
capacitance, typical within the +/-30ppm/C required for
NPO (COG) classification and have excellent conductivity
internal electrode. Thus, Cal-Chip GUQ
FEATURES
-
High Q and low ESR performance at high frequency
-
Ultra low capacitance to 0.1pF
-
Can offer high precision tolerance to ±0.05pF
-
Quality improvement of telephone calls for low
power loss and better performance
APPLICATIONS
-
Telecommunication products & equipments: Mobile
phone, WLAN, Base station
-
RF module: Power amplifier, VCO
-
Tuners
CONSTRUCTION AND DIMENSIONS
L
T
3
4
W
5
M
b
M
b
2
SIZE INCH
(MM)
(MM)
L
(MM)
W
(MM) / SYMBOL
T
REMARK
#
#
#
(MM)
M
b
1
01005 (0402)
0201 (0603)
0402 (1005)
0603 (1608)
0805 (2012)
0505 (1414)
1111 (2828)
0.40±0.02
0.60±0.03
1.00±0.05
1.60±0.10
2.00±0.15
2.00±0.15
1.40 +0.38/-0.25
2.79+0.51/-0.25
0.20±0.02
0.30±0.03
0.50±0.05
0.80±0.10
1.25±0.10
1.25±0.20
1.40±0.38
2.79±0.38
0.20±0.02
0.30±0.03
0.50±0.05
0.80±0.07
0.60±0.10
0.85±0.10
1.15±0.15
≤1.78
V
L
N
S
H
A
T
J
G
0.10±0.03
0.15±0.05
0.25+0.05/-0.10
0.40±0.15
0.50±0.20
NO.
1
2
3
4
5
NAME
Ceramic Material
Inner electrode
Inner layer
Termination
Middle layer
Outer layer
NP0
BaTiO
3
based
Cu
Cu
Ni
Sn (Matt)
1.60+0.15/-0.10 0.80+0.15/-0.10 0.50±0.10
#
#
0.25+0.25/-0.13
0.38±0.25
#Reflow soldering only is recommended
ORDERING INFORMATION
GUQ
SERIES
GUQ - Ultra High Q
& Low ESR
10
SIZE
01 - 01005 (0402)
02 - 0201 (0603)
04 - 0402 (1005)
11 - 0505 (1414)
10 - 0603 (1608)
21 - 0805 (2012)
22 - 1111 (2828)
CG
DIELECTRIC
CG - NPO / C0G
101
CAPACITANCE
Two significant digits
followed b no. of
zeros. An R is in
olace of decimal
point eg.:
0R5: 0.5pF
1R0: 1.0uF
100: 10uF
J
TOLERANCE
A: ±0.05pF
B: ± 0.1pF
C: ± 0.25pF
D: ± 0.5pF
F: ± 1%
G: ± 2%
J: ± 5%
250
VOLTAGE
Two significant digits
followed b no. of
zeros. An R is in
Place of decimal
point eg.:
6R3: 6.3
25: 25 VDC
50: 50 VDC
100: 100 VDC
250: 250 VDC
1K5: 1500
N
TERMINATION
N- Cu/Ni/Sn
T
PACKAGING
T - 7” reel
TD - 13 reel
ELECTRICAL SPECIFICATIONS
DIALECTRIC
SIZE
CAPACITANCE RANGE*
CAPACITANCE TOLERANCE**
RATED VOLTAGE (WVDC)
TAN
δ*
INSULATION RESISTANCE AT UR
OPERATING TEMPERATURE
CAPACITANCE CHARACTERISTIC
TERMINATION
NP0
01005, 0201, 0402, 0505, 0603, 0805, 1111
0.1pF to 10000pF
Cap<10pF: A (±0.05pF ), B (±0.1pF), C (±0.25pF), D (±0.5pF)
Cap≥10pF: F (±1%), G (±2%), J (±5%)
6.3V, 10V, 25V, 50V, 100V, 200V 250V, 500V, 1500V
01005, 0201, 0402/25V~50V: Cap<30pF:Q≥400+20C; Cap≥30pF:Q≥1000
0402/100V~200V, 0603, 0805, 0505, 1111: Cap<30pF:Q≥800+20C; Cap≥30pF:Q≥1400
PACKAGING STYLE AND QUANTITY
SIZE
01005 (0402)
0201 (0603)
0402 (1005)
0505 (1414)
0603 (1608)
0805 (2012)
1111 (2828)
THICKNESS (mm)/SYMBOL
0.20±0.02
0.30±0.03
0.50±0.05
1.15±0.15
0.80±0.07
0.85±0.10
1.78
V
L
N
J
S
T
G
PAPER TAPE
7” REEL
20k
15k
10k
3k
4k
4k
2k
15k
15k
70k
50k
13” REEL
≥10GΩ or RxC≥100Ω-F whichever is smaller
-55 TO +125°C
±30ppm/ °C
Ni/Sn (lead-free termination)
* Measured at the condition of 25°C ambient temperature and 30~70% related humidity.
Apply 1.0±0.2Vrms, 1.0MHz±10% for Cap≤1000pF and 1.0±0.2Vrms, 1.0kHz±10% for Cap>1000pF.
1
嵌入式系统
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