RN1101ACT ~ RN1106ACT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101ACT, RN1102ACT, RN1103ACT
RN1104ACT, RN1105ACT, RN1106ACT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
１
0.25±0.03
２
•
Complementary to RN2101ACT to RN2106ACT
0.35±0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1101ACT
RN1102ACT
R2
RN1103ACT
RN1104ACT
E
RN1105ACT
RN1106ACT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.15±0.03
0.65±0.02
0.05±0.03
•
３
Incorporating a bias resistor into a transistor reduces the number of parts,
which enables the manufacture of ever more compact equipment and
saves assembly cost.
B
R1
1.BASE
CST3
JEDEC
JEITA
TOSHIBA
2. EMITTER
3.COLLECTOR
2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101ACT to 1106ACT
RN1101ACT to 1106ACT
RN1101ACT to 1104ACT
RN1105ACT, 1106ACT
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
50
50
10
5
80
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note1: Mounted on FR4 board (10 mm
×
10 mm
×
1 mm)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
―
―
2004-08
1
2014-03-01
RN1101ACT ~ RN1106ACT
RN1101ACT
IC - VI(ON)
100
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE= 0.2V
RN1102ACT
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE = 0.2V
10
10
Ta=100°C
1
25
-25
Ta=100°C
1
25
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
100
COLLECTOR CURRENT IC (mA)
RN1103ACT
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
RN1104ACT
IC - VI (ON)
COMMON EMMITER
VCE= 0.2V
COMMON EMITTER
VCE= 0.2V
10
Ta=100°C
25
1
-25
10
Ta=100°C
25
1
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
RN1105ACT
100
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
RN1106ACT
IC - VI (ON)
COMMON EMITTER
VCE = 0.2V
COMMON EMITTER
VCE = 0.2V
10
10
Ta=100°C
1
25
-25
Ta=100°C
1
25
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
3
2014-03-01
RN1101ACT ~ RN1106ACT
RN1101ACT
IC - VI(OFF)
10000
COLLECTOR CURRENT IC (uA)
COMMON EMITTER
VCE = 5V
RN1102ACT
IC - VI (OFF)
10000
COLLECTOR CURRENT
IC
(uA)
COMMON EMITTER
VCE = 5V
1000
Ta=100°C
25
-25
1000
Ta=100°C
25
-25
100
100
10
0.2
0.6
1
1.4
1.8
2.2
INPUT VOLTAGE
VI (OFF) (V)
10
0.2
0.6
1
1.4
1.8
2.2
INPUT VOLTAGE
VI (OFF) (V)
RN1103ACT
10000
COLLECTOR CURRENT IC (uA)
IC - VI (OFF)
10000
COLLECTOR CURRENT IC (uA)
RN1104ACT
IC - VI (OFF)
COMMON EMMITER
VCE= 5V
COMMON EMITTER
VCE= 5V
1000
Ta=100°C
25
-25
1000
Ta=100°C
-25
100
100
25
10
0.4
0.8
1.2
1.6
2
2.4
INPUT VOLTAGE
VI (OFF) (V)
10
0
0.5
1
1.5
2
2.5
3
INPUT VOLTAGE
VI (OFF) (V)
RN1105ACT
10000
COLLECTOR CURRENT IC (uA)
IC - VI (OFF)
10000
COLLECTOR CURRENT IC (uA)
RN1106ACT
IC - VI (OFF)
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
1000
Ta=100°C
25
-25
1000
Ta=100°C
25
-25
100
100
10
0.2
0.4
0.6
0.8
1
1.2
INPUT VOLTAGE
VI (OFF) (V)
10
0.2
0.4
0.6
0.8
1
1.2
INPUT VOLTAGE
VI (OFF) (V)
4
2014-03-01
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