RN1114MFV∼RN1118MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
0.8 ± 0.05
Unit: mm
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
With built-in bias resistors
1.2 ± 0.05
0.22 ± 0.05
1
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2114MFV to RN2118MFV
0.4
0.4
1
3
2
0.13 ± 0.05
Equivalent Circuit and Bias Resister Values
Type No.
RN1114MFV
RN1115MFV
RN1116MFV
RN1117MFV
RN1118MFV
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
1.BASE
0.5 ± 0.05
VESM
JEDEC
JEITA
TOSHIBA
Weight: 1.5 mg (typ.)
2.EMITTER
3.COLLECTOR
―
―
2-1L1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1114MFV
to 1118MFV
RN1114MFV
RN1115MFV
Emitter-base voltage
RN1116MFV
RN1117MFV
RN1118MFV
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114MFV
to 111M8FV
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
150
150
−55
to 150
Unit
V
V
0.5mm
Land Pattern Example
V
0.45mm
0.45mm
0.4mm
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mm)
Start of commercial production
2005-09
1
2014-03-01
RN1114MFV∼RN1118MFV
100
RN1114MFV
IC - V I(ON)
100
RN1115MFV
IC - V I(ON)
コレクタ電流
IC (mA)
COLLECTOR CURRENT IC (mA)
10
Ta = 100°C
-25
コレクタ電流
IC (mA)
COLLECTOR CURRENT IC (mA)
エミッタ接地
COMMON EMITTER
V
CE =
= 0.2V
V
CE
0.2 V
エミッタ接地
COMMON EMITTER
V
CE =
= 0.2V
V
CE
0.2 V
10
Ta = 100°C
-25
25
1
25
1
0.1
0.1
1
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
IC - V I(ON)
10
0.1
0.1
1
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
IC - V I(ON)
10
RN1116MFV
100
RN1117MFV
100
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA)
コレクタ電流
IC (mA)
COLLECTOR CURRENT IC (mA)
エミッタ接地
COMMON EMITTER
V CE =
V
VCE = 0.2
0.2V
エミッタ接地
COMMON EMITTER
V
V CE
0.2
0.2V
CE =
=
V
10
Ta = 100°C
-25
25
1
10
Ta = 100°C
-25
25
1
0.1
0.1
1
10
100
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
0.1
0.1
1
10
100
INPUT VOLTAGE
I(ON) ( V
(V)
入力オン 電圧
V
V
I
(ON)
)
RN1118MFV
100
IC - V I(ON)
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA)
COMMON EMITTER
エミッタ接地
VCE = 0.2 V
V CE = 0.2V
10
Ta = 100°C
25
-25
1
0.1
1
10
INPUT VOLTAGE
I(ON) ( V )
入力オン 電圧
V
V
I
(ON) (V)
100
3
2014-03-01
RN1114MFV∼RN1118MFV
RN1114MFV
10000
IC - V I(OFF)
10000
RN1115MFV
IC - V I(OFF)
コレクタ電流
IC (μA)
COLLECTOR CURRENT IC (μA)
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
COMMON EMITTER
エミッタ接地
VCE =
=
V
V CE
5
5V
1000
Ta = 100°C
25
100
-25
1000
Ta = 100°C
25
-25
100
エミッタ接地
COMMON EMITTER
VCE =
V CE = 5V
5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE
I(OFF) ( V )
入力オフ電圧
V
V
I
(OFF) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE
I(OFF) ( V )
入力オフ電圧
V
V
I
(OFF) (V)
10000
RN1116MFV
IC - V I(OFF)
10000
RN1117MFV
IC - V I(OFF)
エミッタ接地
COMMON EMITTER
V CE =
VCE = 5 V
5V
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
エミッタ接地
COMMON EMITTER
VCE =
=
V
V CE
5
5V
1000
Ta = 100°C
25
-25
1000
Ta = 100°C
25
-25
100
100
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INPUT VOLTAGE V
I
(OFF)
V )
入力オフ電圧
V I(OFF) (
(V)
10
0.8
1.2
1.6
2
2.4
2.8
INPUT VOLTAGE
I(OFF) ( V
(V)
入力オフ電圧
V
V
I
(OFF)
)
3.2
RN1118MFV
10000
IC - V I(OFF)
エミッタ接地
COMMON EMITTER
V
= 5
=
VCE
CE
V
5V
COLLECTOR CURRENT IC (μA)
コレクタ電流
IC (μA)
1000
Ta = 100°C
25
-25
100
10
1
2
3
4
5
6
INPUT VOLTAGE V
I
(OFF)
V )
入力オフ電圧
V I(OFF) (
(V)
4
2014-03-01
RN1114MFV∼RN1118MFV
RN1114MFV
1000
COMMON EMITTER
エミッタ接地
VCE = 5 V
V CE = 5V
hFE - IC
1000
RN1115MFV
hFE - IC
エミッタ接地
COMMON EMITTER
VCE = 5 V
V CE = 5V
直流電流増幅率
hFE
DC CURRENT GAIN hFE
直流電流増幅率
hFE
DC CURRENT GAIN hFE
100
Ta = 100°C
25
100
Ta = 100°C
25
-25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
hFE - IC
100
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
hFE - IC
100
RN1116MFV
1000
RN1117MFV
1000
COMMON EMITTER
エミッタ接地
VCE = 5 V
V CE = 5V
COMMON EMITTER
エミッタ接地
VCE =
=
V
V CE
5
5V
直流電流増幅率
hFE
DC CURRENT GAIN
hFE
直流電流増幅率
hFE
DC CURRENT GAIN hFE
100
Ta = 100°C
25
-25
10
100
Ta = 100°C
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
RN1118MFV
1000
COMMON EMITTER
エミッタ接地
VCE = 5 V
V CE = 5V
1
100
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
100
hFE - IC
直流電流増幅率
hFE
DC CURRENT GAIN hFE
100
Ta = 100°C
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
コレクタ電流
IC (mA )
100
5
2014-03-01
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