SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
SMB (DO-214AA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
BR
(bi-directional)
V
WM
P
PPM
(uni-directional)
P
PPM
(bi-directional)
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 49.1 V
6.4 V to 49.1 V
5.0 V to 40 V
1000 W
800 W
100 A
150 °C
Uni-directional, bi-directional
SMB (DO-214AA)
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity:
for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
uni-directional
bi-directional
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
1000
800
See next table
100
-55 to +150
UNIT
W
A
A
°C
Revision: 16-Jan-18
Document Number: 89424
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
UNI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
BREAKDOWN
VOLTAGE
V
BR
AT I
T
(V)
(1)
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
TEST CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
1000
1000
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
CURRENT
I
PPM
(A)
(2)
108.7
97.1
89.3
83.3
77.5
73.5
69.4
64.9
58.8
54.9
50.3
46.5
43.1
41.0
38.5
36.2
34.2
30.9
28.2
25.7
23.8
22.0
20.7
18.8
17.2
15.5
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Vishay General Semiconductor
SMB10J5.0A
SMB10J6.0A
SMB10J6.5A
SMB10J7.0A
SMB10J7.5A
SMB10J8.0A
SMB10J8.5A
SMB10J9.0A
SMB10J10A
SMB10J11A
SMB10J12A
SMB10J13A
SMB10J14A
SMB10J15A
SMB10J16A
SMB10J17A
SMB10J18A
SMB10J20A
SMB10J22A
SMB10J24A
SMB10J26A
SMB10J28A
SMB10J30A
SMB10J33A
SMB10J36A
SMB10J40A
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
(4)
V = 3.5 V at I = 50 A (uni-directional only)
F
F
Revision: 16-Jan-18
Document Number: 89424
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
BI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
SMB8J5.0CA
SMB8J6.0CA
SMB8J6.5CA
SMB8J7.0CA
SMB8J7.5CA
SMB8J8.0CA
SMB8J8.5CA
SMB8J9.0CA
SMB8J10CA
SMB8J11CA
SMB8J12CA
SMB8J13CA
SMB8J14CA
SMB8J15CA
SMB8J16CA
SMB8J17CA
SMB8J18CA
SMB8J20CA
SMB8J22CA
SMB8J24CA
SMB8J26CA
SMB8J28CA
SMB8J30CA
SMB8J33CA
SMB8J36CA
SMB8J40CA
DEVICE
MARKING
CODE
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
BREAKDOWN
VOLTAGE
V
BR
(V)
(1)
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
MAX.
7.25
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
TEST CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
2000
2000
1000
400
200
100
40
20
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
CURRENT
I
PPM
(A)
(2)
87.0
77.7
71.4
66.7
62.0
58.8
55.6
51.9
47.1
44.0
40.2
37.2
34.5
32.8
30.8
29.0
27.4
24.7
22.5
20.6
19.0
17.6
16.5
15.0
13.8
12.4
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Vishay General Semiconductor
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
(1)
SYMBOL
R
JA
(1)
R
JL
VALUE
72
20
UNIT
°C/W
°C/W
Note
Mounted on minimum recommended pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMB10J5.0A-M3/52
SMB10J5.0A-M3/5B
UNIT WEIGHT (g)
0.106
0.106
PREFERRED PACKAGE CODE
52
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 16-Jan-18
Document Number: 89424
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
10
SMB10J5.0 -
SMB10J40A
1000
1
SMB8J5.0C -
SMB8J40CA
100 µs
1.0 ms
10 ms
100
V
R
, Measured at
Stand-Off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
100
200
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
Bi-Directional
10
1
t
d
- Pulse Width (s)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
Transient Thermal Impedance (°C/W)
0
25
50
75
100
125
150
175
200
10
25
0
1.0
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
t
p
- Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
150
I
PPM
- Peak Pulse Current, % I
RSM
100
Peak Value
I
PPM
Peak Forward Surge Current (A)
t
r
= 10 µs
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
10
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Revision: 16-Jan-18
Document Number: 89424
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMB
(DO-214AA)
Cathode Band
Vishay General Semiconductor
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.086 (2.18)
MIN.
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.220 REF.
Revision: 16-Jan-18
Document Number: 89424
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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