Ordering number : EN8750
FW349
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW349
Features
•
•
•
•
General-Purpose Switching Device
Applications
•
Motor drive application.
Low ON-resistance.
Ultrahigh-speed switching.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PT
Tch
Tstg
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(1500mm
2
✕0.8mm)1unit,
PW≤10s
Mounted on a ceramic board
(1500mm
2
✕0.8mm),
PW≤10s
Conditions
N-channel
45
±20
5
6
20
1.8
2.2
150
--55 to +150
P-channel
-
-45
±20
--4.5
--5
-
-18
Unit
V
V
A
A
A
W
W
°C
°C
Marking : W349
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PA TI IM TC-00000835 No.8750-1/6
FW349
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--45V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=-
-1mA
VDS=--10V, ID=-
-4.5A
ID=--4.5A, VGS=-
-10V
ID=--3A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--24V, VGS=-
-10V, ID=--4.5A
VDS=--24V, VGS=-
-10V, ID=--4.5A
VDS=--24V, VGS=-
-10V, ID=--4.5A
IS=--4.5A, VGS=0V
--1.2
4.5
7.6
47
76
1275
150
110
14
50
123
75
26
2.4
5.7
--0.86
--1.2
62
106
--45
--1
±10
--2.6
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=45V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=3A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=24V, VGS=10V, ID=5A
VDS=24V, VGS=10V, ID=5A
VDS=24V, VGS=10V, ID=5A
IS=5A, VGS=0V
1.2
4.2
7.1
28
47
860
105
75
14
64
60
65
18.1
2.6
4.0
0.83
1.2
37
66
45
1
±10
2.6
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Package Dimensions
unit : mm (typ)
7005-003
Electrical Connection
8
7
6
5
8
5
0.3
1
4
0.43
0.2
5.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
4.4
6.0
0.595
1.27
0.1
1.5
1.8 MAX
Top view
No.8750-2/6
FW349
Switching Time Test Circuit
[N-channel]
10V
0V
VIN
ID=5A
RL=4.8Ω
VIN
VDD=24V
[P-channel]
0V
--10V
VIN
VDD= --24V
VIN
ID= --4.5A
RL=5.33Ω
D
PW=10µs
D.C.≤1%
VOUT
PW=10µs
D.C.≤1%
D
VOUT
G
G
FW349
P.G
50Ω
FW349
P.G
50Ω
S
S
5.0
4.5
4.0
ID -- VDS
16V
[Nch]
7
ID -- VGS
VDS=10V
[Nch]
4V
6V
5V
VGS=3V
Drain Current, ID -- A
6
Drain Current, ID -- A
3.5
3.0
2.5
2.0
1.5
1.0
5
10V
4
3
Ta=
7
0
0.5
1.0
1.5
2.0
2.5
1
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
--25
3.0
3.5
°
C
25
°
C
2
5
°
C
4.0
Drain-to-Source Voltage, VDS -- V
100
IT12874
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
100
IT12875
[Nch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
90
80
70
60
50
40
30
20
10
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
ID=3A
5A
=3A
, ID
=4V
V GS
5A
I =
0V, D
=1
VGS
Gate-to-Source Voltage, VGS -- V
10
IT12876
Ambient Temperature, Ta --
°C
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IT12877
y
fs -- ID
[Nch]
IS -- VSD
[Nch]
VGS=0V
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
VDS=10V
1.0
7
5
3
2
°
C
25
C
5
°
--2
=
°
C
Ta
75
Source Current, IS -- A
0.1
0.01
2
3
5 7
0.1
2
3
5 7
1.0
2
3
Drain Current, ID -- A
10
IT12878
5 7
0.01
0.2
0.4
Ta=7
5
0.6
--25
°
C
0.8
°
C
25
°
C
1.0
1.2
IT12879
Diode Forward Voltage, VSD -- V
No.8750-3/6
FW349
3
2
SW Time -- ID
[Nch]
VDD=24V
VGS=10V
3
2
Ciss, Coss, Crss -- VDS
[Nch]
f=1MHz
Switching Time, SW Time -- ns
100
7
5
Ciss, Coss, Crss -- pF
tf
1000
7
5
3
2
Ciss
td(off)
tr
3
2
td(on)
10
7
0.1
2
3
5
7
1.0
2
3
5
10
IT12880
7
100
7
5
3
0
5
10
15
Coss
Crss
20
25
30
35
40
45
Drain Current, ID -- A
10
9
Drain-to-Source Voltage, VDS -- V
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IT12881
VGS -- Qg
VDS=24V
ID=5A
[Nch]
ASO
IDP=20A
ID=5A
10
[Nch]
≤10µs
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
IT12882
Drain Current, ID -- A
10
m
10
1m
0
µ
s
s
s
0m
s
DC
op
era
t
10
s
Operation in this
area is limited by RDS(on).
ion
0.01
0.01
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
✕0.8mm)
1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7
Total Gate Charge, Qg -- nC
--4.5
ID -- VDS
--5V
Drain-to-Source Voltage, VDS -- V
--6
IT12883
[Pch]
VDS= --10V
ID -- VGS
[Pch]
--4.0
--3.5
--4V
--10V
--6
V
VGS= --3V
Drain Current, ID -- A
--5
Drain Current, ID -- A
--3.0
--2.5
--2.0
--1.5
--1.0
--4
--16V
--3
--2
Ta=7
5
°
C
0
--0.5
--1.0
--1.5
--2.0
--2.5
--1
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
25
°
C
--3.0
--3.5
--0.5
-25
°
C
--4.0
Drain-to-Source Voltage, VDS -- V
160
IT12884
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
160
IT12885
[Pch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
140
120
140
120
100
80
60
40
20
0
--60
ID= --3A
100
--4.5A
80
60
40
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
4
= --
GS
V
3.0
= --
V, I D
A
=
--4
, ID
V
--10
S=
VG
.5A
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT12886
Ambient Temperature, Ta --
°C
IT12887
No.8750-4/6
FW349
2
y
fs -- ID
[Pch]
VDS=
--10V
Forward Transfer Admittance,
y
fs -- S
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.01
2
3
5 7
--0.1
2
3
5 7
--1.0
2
3
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
IS -- VSD
[Pch]
VGS=0V
Drain Current, ID -- A
5
3
--10
IT12888
5 7
0
--0.2
--0.4
Ta=7
5
°
C
25
°
C
--25
°
C
--0.6
--0.8
Ta
-2
=-
°
C
75
Source Current, IS -- A
°
C
25
5
°
C
--1.0
--1.2
--1.4
Diode Forward Voltage, VSD -- V
5
IT12889
SW Time -- ID
[Pch]
VDD= --24V
VGS= --10V
Ciss, Coss, Crss -- pF
3
2
Ciss, Coss, Crss -- VDS
[Pch]
f=1MHz
Switching Time, SW Time -- ns
2
td(off)
Ciss
1000
7
5
3
2
100
7
5
tf
tr
3
2
Coss
Crss
td(on)
100
7
5
3
10
7
5
--0.1
2
3
5
7
--1.0
2
3
5
--10
IT12890
7
0
--5
--10
--15
--20
--25
--30
--35
--40
--45
Drain Current, ID -- A
--10
--9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT12891
[Pch]
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP= --18A
ID= --4.5A
10
m
[Pch]
Gate-to-Source Voltage, VGS -- V
VDS= --24V
ID= --4.5A
Drain Current, ID -- A
≤10µs
--8
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
25
30
IT12892
10
10
DC
10
s
0m
s
s
1
ms
0
µ
s
op
e
Operation in this
area is limited by RDS(on).
ra
tio
n
--0.01
--0.01 2 3
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
✕0.8mm)
1unit
5 7 --0.1 2 3
5 7--1.0 2 3
5 7 --10
2 3
Total Gate Charge, Qg -- nC
2.6
Allowable Power Dissipation, PD -- W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Mounted on a ceramic board (1500mm
2
✕0.8mm)
PW≤10s
Allowable Power Dissipation, PD (FET 1) -- W
PD -- Ta
[Nch, Pch]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Drain-to-Source Voltage, VDS -- V
PD(FET 1) -- PD(FET 2)
[Nch, Pch]
Mounted on a ceramic board (1500mm
2
✕0.8mm)
PW≤10s
5 7
--100
IT12893
To
t
1u
nit
al
di
ss
ip
ati
on
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Ambient Temperature, Ta --
°C
IT12894
Allowable Power Dissipation, PD (FET 2) -- W
IT12895
No.8750-5/6
_corporation/fw349-tl-e_pdf/pg_0001.png)
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