PD - 95881B
IRF6613
l
l
l
l
l
l
l
Application Specific MOSFETs
Ideal for Synchronous Rectification in Isolated
DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
HEXFET
®
Power MOSFET
V
DSS
40V
R
DS(on)
max
3.4mΩ@V
GS
= 10V
4.1mΩ@V
GS
= 4.5V
Qg(typ.)
42nC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET ISOMETRIC
Description
The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Max.
40
±20
150
23
18
180
89
2.8
1.8
200
18
0.022
-40 to + 150
Units
V
i
Power Dissipation
f
Power Dissipation
f
i
@ 10V
Ãf
@ 10V
f
A
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
W
mJ
A
W/°C
°C
Linear Derating Factor
fÃ
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
Notes
through
are on page 2
www.irf.com
1
9/30/05
IRF6613
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
93
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
38
2.6
3.1
–––
-5.8
–––
–––
–––
–––
–––
42
11.5
3.3
12.6
14.6
15.9
22
18
47
27
4.9
5950
990
460
–––
–––
3.4
4.1
2.25
–––
1.0
150
100
-100
–––
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
nC
nC
V
DS
= 20V
V
GS
= 4.5V
I
D
= 18A
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 23A
e
V
GS
= 4.5V, I
D
= 18A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 18A
mV/°C Reference to 25°C, I
D
= 1mA
See Fig. 6 and 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
e
I
D
= 18A
Clamped Inductive Load
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
38
42
110
A
180
1.0
57
63
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 18A
di/dt = 100A/µs
e
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.2mH,
R
G
= 25Ω, I
AS
= 18A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of
part.
R
θ
is measured at
T
J
of approximately 90°C.
2
www.irf.com
IRF6613
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
100
2.7V
10
2.7V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000.0
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 23A
ID, Drain-to-Source Current
(Α)
VGS = 10V
100.0
10.0
(Normalized)
TJ = 150°C
1.5
1.0
TJ = 25°C
VDS = 15V
1.0
≤
60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
Fig 4.
Normalized On-Resistance vs. Temperature
12
ID= 18A
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
VDS = 32V
VDS= 20V
10
8
6
4
2
0
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
20
40
60
80
100
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF6613
1000.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100.0
TJ = 150°C
10.0
100
10
100µsec
1
1.0
TJ = 25°C
VGS = 0V
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
1msec
10msec
100
1000
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
0.01
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
150
Fig 8.
Maximum Safe Operating Area
2.5
120
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
90
1.5
ID = 250µA
60
30
1.0
0
25
50
75
100
125
150
0.5
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
100
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
A
τ
τ
2
τ
3
τ
4
τ
4
0.1
Ri (°C/W)
0.6784
17.299
17.566
9.4701
τi
(sec)
0.00086
0.57756
8.94
106
0.01
τ
1
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com
IRF6613
m
RDS (on), Drain-to -Source On Resistance (
Ω)
EAS, Single Pulse Avalanche Energy (mJ)
7.0
1000
ID = 23A
6.0
800
6.7A
8.1A
BOTTOM
18A
TOP
ID
5.0
600
4.0
TJ = 125°C
400
3.0
TJ = 25°C
2.0
2.0
4.0
6.0
8.0
10.0
200
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy Vs. Drain Current
15V
L
D
V
DS
DRIVER
VDS
L
+
V
DD
-
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
A
D.U.T
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
0.01
Ω
Fig 13a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
Fig 14a.
Switching Time Test Circuit
90%
V
DS
10%
V
GS
I
AS
t
d(on)
t
r
t
d(off)
t
f
Fig 13b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Fig 14b.
Switching Time Waveforms
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
V
GS
3mA
+
V
-
DS
Vgs(th)
I
G
I
D
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15.
Gate Charge Test Circuit
Fig 16.
Gate Charge Waveform
www.irf.com
5
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
