Freescale Semiconductor
Technical Data
Document Number: MRF6S23100H
Rev. 2, 12/2008
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
•
Typical 2-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1000 mA,
P
out
= 20 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.4 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -40.5 dBc @ 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S23100HR3
MRF6S23100HSR3
2300-2400 MHz, 20 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF6S23100HR3
CASE 465A-06, STYLE 1
NI-780S
MRF6S23100HSR3
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
-0.5, +68
-0.5, +12
-65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 20 W CW
Symbol
R
θJC
0.53
0.59
Value
(2,3)
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
MRF6S23100HR3 MRF6S23100HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Class
3A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1000 mAdc, Measured in Functional Test))
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 20 W Avg., f1 = 2390 MHz, f2 = 2400 MHz,
2- Carrier W- CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3
measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
14
22.5
-35
-38
—
15.4
23.5
-37
-40.5
-10
17
—
—
—
—
dB
%
dBc
dBc
dB
MRF6S23100HR3 MRF6S23100HSR3
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
+
C6
RF
INPUT Z1
C1
+
C5
C4
C3
R1
C8
C2
Z11
Z12
Z13
C7
DUT
Z14
C9
C10
C11
V
SUPPLY
+
C12
RF
OUTPUT
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.725″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.110″ x 0.240″ Microstrip
0.140″ x 0.080″ Microstrip
0.167″ x 0.500″ Microstrip
0.130″ x 0.080″ Microstrip
0.250″ x 0.611″ Microstrip
0.060″ x 0.080″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.329″ x 0.756″ Microstrip
0.083″ x 0.756″ Microstrip
0.092″ x 0.800″ Microstrip
0.436″ x 0.800″ Microstrip
0.974″ x 0.080″ Microstrip
0.727″ x 0.080″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C2, C7, C8
C3
C4, C9
C5
C6
C10, C11
C12
R1
Description
Ferrite Bead, Surface Mount
5.6 pF Chip Capacitors, B Case
0.01
μF
Chip Capacitor
2.2
μF,
50 V Chip Capacitors
22
μF,
25 V Tantalum Capacitor
47
μF,
16 V Tantalum Capacitor
10
μF,
50 V Chip Capacitors
330
μF,
63 V Electrolytic Capacitor
10
Ω,
1/4 W Chip Resistor
Part Number
2743019447
ATC100B5R6CT500XT
C1825C103J1RAC
C1825C225J5RAC
T491D226K025AT
T491D476K016AT
GRM55DR61H106KA88B
EMVY630GTR331MMH0S
CRC120610R0FKEA
Manufacturer
Fair-Rite
ATC
Kemet
Kemet
Kemet
Kemet
Murata
Nippon Chemi-Con
Vishay
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
3
C4 C3
C2
C8
R1
B1
C6
C5
C11
C12
C9
C10
C1
CUT OUT AREA
C7
MRF6S23100 Rev 2.0
Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout
MRF6S23100HR3 MRF6S23100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
15.8
15.6
G
ps
, POWER GAIN (dB)
15.4
15.2
15
14.8
ACPR
14.6
G
ps
V
DD
= 28 Vdc, P
out
= 20 W (Avg.), I
DQ
= 1000 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
η
D
, DRAIN
EFFICIENCY (%)
η
D
25.4
24.8
24.2
23.6
3.84 MHz Channel Bandwidth
-35
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
-37
IRL
-39
-41
IM3 (dBc), ACPR (dBc)
-12
-15
-18
-21
-24
-43
14.4
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 20 Watts Avg.
15.2
15.1
15
G
ps
, POWER GAIN (dB)
14.9
14.8
14.7
14.6
14.5
14.4
14.3
ACPR
IRL
IM3
G
ps
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
35.5
V
DD
= 28 Vdc, P
out
= 40 W (Avg.), I
DQ
= 1000 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
35
34.5
34
35.5
-25
-27
-29
-31
-33
η
D
, DRAIN
EFFICIENCY (%)
η
D
IM3 (dBc), ACPR (dBc)
-12
-14
-16
-18
-20
-22
14.2
-35
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 40 Watts Avg.
18
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1500 mA
17
G
ps
, POWER GAIN (dB)
1250 mA
16
15
14
13
12
0.1
500 mA
1000 mA
750 mA
V
DD
= 28 Vdc, f1 = 2345 MHz
f2 = 2355 MHz, Two-Tone Measurements
10 MHz Tone Spacing
0
-1 0
-2 0
1500 mA
-3 0
-4 0
-5 0
750 mA
-60
-70
1
10
100
300
0.1
1
10
100
300
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
1000 mA
I
DQ
= 500 mA
1250 mA
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two-T one Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
嵌入式系统
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