PD - 96145A
IRF7751GPbF
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Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
HEXFET
®
Power MOSFET
V
DSS
-30V
R
DS(on)
max
35mΩ@V
GS
= -10V
55mΩ@V
GS
= -4.5V
I
D
-4.5A
-3.8A
Description
HEXFET
®
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
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signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-4.5
-3.6
-18
1.0
0.64
0.008
±20
-55 to +150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
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1
05/14/09
IRF7751GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
-30 ––– –––
V
V
GS
= 0V, I
D
= -250µA
––– 0.020 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 35
V
GS
= -10V, I
D
= -4.5A
mΩ
––– 55
V
GS
= -4.5V, I
D
= -3.8A
-1.0 ––– -2.5
V
V
DS
= V
GS
, I
D
= -250µA
6.8 ––– –––
S
V
DS
= -10V, I
D
= -4.5A
––– ––– -15
V
DS
= -24V, V
GS
= 0V
µA
––– ––– -25
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
––– ––– -100
V
GS
= -20V
nA
––– ––– 100
V
GS
= 20V
––– 29
44
I
D
= -4.5A
––– 5.5 –––
nC V
DS
= -15V
––– 5.0 –––
V
GS
= -10V
––– 13
20
V
DD
= -15V
––– 16
24
I
D
= -1.0A
ns
––– 155 233
R
G
= 6.0Ω
––– 80 120
V
GS
= -10V
––– 1464 –––
V
GS
= 0V
––– 227 –––
pF
V
DS
= -25V
––– 146 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
23
19
-1.0
A
-18
-1.2
35
28
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.0A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10 sec.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7751GPbF
100
VGS
TOP
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.7V
100
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
VGS
-10.0V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
BOTTOM -2.7V
TOP
1
-2.7V
0.1
-2.7V
1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
I
D
= -4.5A
-I
D
, Drain-to-Source Current (A)
1.5
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1.0
0.5
0.1
2.0
V DS= -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
0.0
-60 -40 -20
V
GS
= -10V
0
20 40 60 80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7751GPbF
4000
-V
GS
, Gate-to-Source Voltage (V)
3200
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
14
12
10
8
6
4
2
0
I
D
=
-4.5A
V
DS
=-24V
V
DS
=-15V
C, Capacitance (pF)
Ciss
2400
1600
800
Coss
Crss
0
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
0
10
20
30
40
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
10us
10
100us
10
T
J
= 25
°
C
1
1ms
1
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V
SD
,Source-to-Drain Voltage (V)
0.1
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7751GPbF
5.0
V
DS
4.0
R
D
V
GS
R
G
-I
D
, Drain Current (A)
D.U.T.
+
3.0
V
GS
2.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
1.0
t
d(on)
t
r
t
d(off)
t
f
V
GS
0.0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
1
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
Microchip MCU
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