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BC846, BC847, BC848
Series
General Purpose
Transistors
NPN Silicon
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These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
COLLECTOR
3
1
BASE
2
EMITTER
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847
BC848
Collector-Base Voltage
BC846
BC847
BC848
Emitter-Base Voltage
BC846
BC847
BC848
Collector Current − Continuous
I
C
V
EBO
6.0
6.0
5.0
100
mAdc
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
V
CBO
80
50
30
V
XX MG
G
Symbol
V
CEO
65
45
30
V
Value
Unit
V
1
2
3
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55 to
+150
Unit
mW
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
April, 2007 − Rev. 5
Publication Order Number:
BC846AWT1/D
BC846, BC847, BC848 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector −Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mA)
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
−
−
−
110
200
420
−
−
−
−
580
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
220
450
800
0.25
0.6
−
−
700
770
V
V
mV
−
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
15
5.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CBO
nA
mA
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
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2
BC846, BC847, BC848 Series
BC847 SERIES & BC848 SERIES
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
2.0
5.0 10
1.0
20
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
V
BE(on)
@ V
CE
= 10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
VCE , COLLECTOR−EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
2.0
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
400
300
200
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
1.0
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC846, BC847, BC848 Series
BC846 SERIES
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 5 V
T
A
= 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 5.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
1.0
10 20
2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
A
= 25°C
1.6
20 mA
1.2
I
C
=
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
2.0
−1.0
−1.4
−1.8
q
VB
for V
BE
−2.2
−55°C to 125°C
0.8
0.4
−2.6
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
−3.0
0.2
0.5
10 20
1.0 2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
10
6.0
4.0
C
ob
f T, CURRENT−GAIN − BANDWIDTH PRODUCT
40
500
V
CE
= 5 V
T
A
= 25°C
200
100
50
20
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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