PD - 94739A
IRG4PH40UD2
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
UltraFast CoPack IGBT
C
V
CES
= 1200V
G
E
V
CE(on) typ.
=
1.72V
@V
GE
= 15V, I
C
= 20A
n-channel
D
S
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing.
D
G
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ Tc = 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
G
Gate
D
Drain
Max.
1200
40
20
160
160
10
40
±20
160
65
-55 to +150
S
Source
Units
V
A
Ã
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
y
y
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
2.5
–––
40
–––
Units
°C/W
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
g (oz.)
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1
01/26/06
IRG4PH40UD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
—
0.63
1.72
2.15
1.7
—
-13
18
—
—
—
3.4
3.3
—
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—
—
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
—
V
GE(th)
Gate Threshold Voltage
3.0
∆V
GE(th)
/∆T
J
Threshold Voltage temp. coefficient
—
11
gfe
Forward Transconductance
—
I
CES
Zero Gate Voltage Collector Current
—
—
V
FM
Diode Forward Voltage Drop
—
—
I
GES
Gate-to-Emitter Leakage Current
—
g
—
V V
GE
= 0V, I
C
= 250µA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 20A, V
GE
= 15V, T
J
= 25°C
2.1
V
I
C
= 40A, V
GE
= 15V, T
J
= 125°C
—
I
C
= 20A, V
GE
= 15V, T
J
= 150°C
—
V
CE
= V
GE
, I
C
= 250µA
6.0
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S V
CE
= 100V, I
C
= 20A
V
GE
= 0V, V
CE
= 1200V
250
2.0
µA V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
2500
3.8
V I
F
= 10A, V
GE
= 0V
I
F
= 10A, V
GE
= 0V, T
J
= 150°C
3.7
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
TS
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
110
18
36
23
27
100
280
1440
1410
2850
22
32
190
630
5360
13
2100
99
12
50
72
4.4
5.9
130
250
210
180
130
24
53
—
—
110
340
—
—
3740
—
—
—
—
—
—
—
—
—
76
110
7.0
8.8
200
380
—
—
nC
Conditions
I
C
= 20A
V
CC
= 400V
V
GE
= 15V
I
C
= 20A, V
CC
= 600V
V
GE
= 15V, R
G
= 10Ω
T
J
= 25°C
Energy losses inclued "tail"
I
C
= 20A, V
CC
= 600V
V
GE
= 15V, R
G
= 10Ω
T
J
= 25°C
I
C
= 20A, V
CC
= 600V
V
GE
= 15V, R
G
= 10Ω, L = 1.0mH
T
J
= 150°C
Energy losses inclued "tail"
Measured 5mm froom package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
=25°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
T
J
=125°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
T
J
=25°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
T
J
=125°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
T
J
=25°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
T
J
=125°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
ns
µJ
ns
µJ
nH
pF
ns
A
nC
A/µs
T
J
=25°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
T
J
=125°C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/µs
2
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IRG4PH40UD2
50
45
40
Square wave:
60% of rated
voltage
I
Load Current ( A )
35
30
25
20
15
10
5
0
0.1
1
10
Ideal diodes
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 35W
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 25°C
T
J
= 150°C
100
T
J
= 150°C
10
10
T
J
= 25°C
1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
1
4
6
8
V
CC
= 10V
5µs PULSE WIDTH
A
10
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PH40UD2
40
V
GE
= 15V
2.5
V
CE
, Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 40A
30
2.0
20
I
C
= 20A
1.5
10
I
C
= 10A
0
25
50
75
100
125
A
150
1.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t2
Notes:
1. Duty factor D = t / t
1 2
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH40UD2
4000
3500
3000
VGS = 0V,
f = 1 MHZ
C ies = C ge + C gd, C ce SHORTED
C res = C gc
C oes = C ce + C gc
14.0
IC= 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VCC = 400V
Capacitance (pF)
2500
2000
1500
Cies
Coes
1000
500
0
1
10
Cres
0
20
40
60
80
100
120
VCE, Collector-toEmitter-Voltage(V)
QG Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3500
VCE = 600V
VGE = 15V
11000
10000
R G = 10
Ω
Ã
IC = 40A
Total Swiching Losses (mJ)
3250
Total Swiching Losses (mJ)
TJ = 25°C
I C = 20A
9000
8000
7000
6000
5000
4000
3000
2000
1000
VGE = 15V
3000
IC = 20A
2750
IC = 10A
-55
-5
45
95
145
2500
0
10
20
30
40
50
0
RG, Gate Resistance (
Ω
)
T J, Juntion Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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5
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