of 350V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Features
•
350V Drain-to-Source Voltage
•
Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
•
Low On-Resistance: 8 (Typical) @ 25°C
•
Low V
GS(off)
Voltage
•
High Input Impedance
•
Low Input and Output Leakage
•
Small Package Size SOT-89 and SOT-223
•
PC Card (PCMCIA) Compatible
•
PCB Space and Cost Savings
Ordering Information
Part Number
CPC3708CTR
CPC3708ZTR
Description
SOT-89: Tape and Reel (1000/Reel)
SOT-223: Tape and Reel (1000/Reel)
Applications
•
•
•
•
•
•
•
•
LED Drive Circuits
Telecommunications
Normally On Switches
Ignition Modules
Converters
Security
Power Supplies
Regulators
Circuit Symbol
D
G
Package Pinout:
D
4
2
D
1
S
3
S
G
Pin Number
Name
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
DS-CPC3708-R03
www.ixysic.com
1
I
NTEGRATED
C
IRCUITS
D
IVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Drain-to-Source Voltage (V
(BR)DSX
)
Gate-to-Source Voltage (V
GS
)
Total Package Dissipation
1
SOT-89
SOT-223
Operational Temperature
Storage Temperature
1
CPC3708
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Ratings
350
±20
1.1
2.5
-40 to +110
-40 to +125
Units
V
V
W
o
C
o
C
Mounted on 1"x1" FR4 board.
Electrical Characteristics @25
o
C (Unless Otherwise Specified)
Parameter
Gate-to-Source Voltage
Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current
On-Resistance
Gate Leakage Current
Gate Capacitance
Symbol
V
GS
V
GS(off)
I
DS(off)
I
D
R
DS(on)
I
GSS
C
ISS
Conditions
I
D
=60mA, V
DS
=5V
I
D
=2A, V
DS
=10V, V
DS
=100V
V
GS
= -5V, V
DS
=190V
V
GS
= -5V, V
DS
=350V
V
GS
= -2.7V, V
DS
=5V, V
DS
=50V
V
GS
= -0.57V, V
DS
=5V
V
GS
= -0.35V, I
DS
=50mA
V
GS
=±20V
V
DS
= V
GS
=0V
Min
-1.005
-2
-
-
-
130
-
-
-
Typ
-
-
-
-
-
-
8
-
-
Max
-1.735
-3.6
20
1
5
-
14
100
300
Units
V
V
nA
A
mA
mA
nA
pF
Thermal Resistance
Package
SOT-89
Parameter
Junction to Case
Junction to Ambient
SOT-223
Junction to Case
Junction to Ambient
Symbol
R
JC
R
JA
R
JC
R
JA
Conditions
-
Min
-
Typ
-
Max
50
90
14
55
ºC/W
Units
-
-
-
2
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R03
I
NTEGRATED
C
IRCUITS
D
IVISION
CPC3708Z (SOT-223) PERFORMANCE DATA*
Output Characteristics
(T
A
=25ºC)
On-Resistance ( )
CPC3708
0.35
0.30
0.25
I
D
(A)
0.20
0.15
0.10
0.05
0.00
0
V
GS
=-0.5
V
GS
=-1
V
GS
=-1.5
V
GS
=-2
20
On-Resistance vs. Drain Current
(V
GS
=0V)
300
250
Transconductance vs Drain Current
(V
DS
=10V)
T
A
=-40ºC
T
A
=25ºC
T
A
=125ºC
15
G
FS
(m )
0.0
0.1
0.2
0.3
I
D
(A)
0.4
0.5
0.6
200
150
100
50
10
5
0
0
0
50
I
D
(mA)
100
150
1
2
V
DS
(V)
3
4
5
250
200
I
D
(mA)
150
100
50
0
-3.0
Transfer Characteristics
(V
DS
=10V)
-2.3
-2.4
V
GS(off)
vs. Temperature
(V
DS
=10V, I
D
=2 A)
On-Resistance ( )
12
11
10
9
8
7
6
5
4
On-Resistance vs. Temperature
(V
GS
=0V, I
D
=100mA)
V
GS(off)
(V)
-1.5
-1.0
T
A
=125ºC
T
A
=25ºC
T
A
=-40ºC
-2.5
-2.6
-2.7
-2.8
-2.9
-3.0
-2.5
-2.0
V
GS
(V)
-40
-20
0
20
40
60
Temperature (ºC)
80
100
-40
-20
0
20
40
60
Temperature (ºC)
80
100
300
250
Capacitance (pF)
200
150
100
50
0
Capacitance vs. Drain-Source Voltage
(V
GS
=-5V)
1
Forward Safe Operating Bias
(V
GS
=0V, DC Load, T
C
=25ºC)
Limited by
Device Channel
Saturation
I
DS
(A)
C
ISS
C
OSS
C
RSS
0.1
Limited by
Device R
DS(on)
0.01
0.001
0
5
10
15
V
DS
(V)
20
25
30
1
10
V
DS
(V)
100
1000
*The Performance data shown in the graphs above is typical of device performance in SOT-223 Package. For guaranteed parameters not indicated in the written
ABI Research最近评选并公布了全球超高频无源和高频无源 RFID芯片的前十大制造商。 前十大超高频无源芯片制造商是： 前十大高频无源芯片制造商是： 超高频的得奖名单并不出人意外，因为实际上似乎总是前三家公司获得大订单。ABI分析家 Mike Liard称，ABI很容易就评选出 Alien、Avery,和 Raflatac为全球...[详细]
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