Preliminary
Datasheet
RJK60S5DPP-E0
600V - 20A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.150
typ. (at I
D
= 10 A, V
GS
= 10 V, Ta = 25C)
High speed switching
t
f
= 23 ns typ. (at I
D
= 10 A, V
GS
= 10 V, R
L
= 30
,
Rg = 10
,
Ta = 25C)
R07DS0641EJ0300
Rev.3.00
Jan 23, 2013
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
MOSFET dv/dt ruggedness
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Limited by Tch max.
STch = 25C, Tch
150C
Value at Tj = 25C, V
DS
480 V
Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
DNote1
I
DNote1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse) Note1
I
AP
E
ARNote2
dv/dt
Note3
Pch
Note4
ch-c
Tch
Tstg
Note2
Ratings
600
+30,
20
20
12.6
40
20
40
5
1.36
150
33.7
3.7
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
V/ns
W
C/W
C
C
R07DS0641EJ0300 Rev.3.00
Jan 23, 2013
Page 1 of 7
RJK60S5DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.150
0.375
2.5
1600
2160
8.2
23
25
49
23
27
10.5
8.5
0.96
400
25
5.6
Max
—
1
±0.1
5
0.178
—
—
—
—
—
—
—
—
—
—
—
—
1.60
—
—
—
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note5
Ta = 150°C
Note5
I
D
= 10 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100kHz
I
D
= 10 A
V
GS
= 10 V
R
L
= 30
Note5
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
Note4
I
D
= 20 A
I
F
= 20 A, V
GS
= 0
Note5
I
F
= 20 A
V
GS
= 0
Note5
di
F
/dt = 100 A/s
R07DS0641EJ0300 Rev.3.00
Jan 23, 2013
Page 2 of 7
RJK60S5DPP-E0
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
250
100
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
I
D
(A)
200
μ
s
PW
10
Operation in this area
is limited by R
DS(on)
1
=
10
150
0
μ
s
100
50
Drain Current
0
0
25
50
75
100 125 150 175
0.1
1
Tc = 25°C
1 shot
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
40
Ta = 25°C
Pulse Test
Typical Output Characteristics
30
Ta = 125°C
Pulse Test
I
D
(A)
30
I
D
(A)
8V
10 V
15 V
7V
8V
10 V
15 V
7 V 6.5 V
25
20
6.5 V
20
Drain Current
Drain Current
6V
15
10
5
0
6V
10
5.5 V
V
GS
= 5 V
V
GS
= 5.5 V
0
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
100
Drain Current I
D
(A)
10
Ta = 125°C
25°C
0.1
1
Ta = 75°C
25°C
0.1
−25°C
V
GS
= 10 V
Pulse Test
0.01
1
10
100
0.01
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current
I
D
(A)
R07DS0641EJ0300 Rev.3.00
Jan 23, 2013
Page 3 of 7
RJK60S5DPP-E0
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.5
Preliminary
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
V
GS
= 10 V
Pulse Test
0.4
0.3
I
D
= 20 A
100
0.2
5A
0.1
10 A
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
−25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current I
DR
(A)
Typical Capacitance vs.
Drain to Source Voltage
100000
10000
V
GS
= 0
f = 100 kHz
Ta = 25°C
Ciss
4
C
OSS
Stored Energy (Typical)
Capacitance C (pF)
3
100
10
Coss
E
OSS
(μJ)
1000
2
Crss
1
0.1
0
50
100
150
200
250
300
1
0
0
50
100
150
200
250
300
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics (Typical)
V
DS
(V)
I
DR
(A)
V
GS
600
V
DS
400
V
DD
= 480 V
300 V
100 V
12
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
V
GS
(V)
100
800
16
Ta = 125°C
10
25°C
Drain to Source Voltage
Gate to Source Voltage
8
Reverse Drain Current
1
V
GS
= 0
Pulse Test
0.1
0
0.4
0.8
1.2
1.6
200
V
DD
= 480 V
300 V
100 V
20
40
4
I
D
= 20 A
Ta = 25°C
60
80
0
0
0
Gate Charge
Qg (nC)
Source to Drain Voltage
V
SD
(V)
R07DS0641EJ0300 Rev.3.00
Jan 23, 2013
Page 4 of 7
RJK60S5DPP-E0
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Drain to Source Breakdown Voltage
V
(BR)DSS
(V)
6
800
Preliminary
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
5
I
D
= 10 mA
4
3
2
1
V
DS
= 10 V
0
−25
0
25
1 mA
0.1 mA
700
600
500
I
D
= 10 mA
V
GS
= 0
400
−25
0
25
50
75
100 125 150
50
75
100 125 150
Case Temperature
Tc (°C)
Case Temperature
Tc (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
1.6
V
DD
= 50 V
Rg
≥
100
Ω
1.2
0.8
0.4
0
25
50
75
100
125
150
Channel Temperature
Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.2
0.1
0.01
0.05
0.02
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 3.7°C/W
ul
ot p
se
0.01
0.01
P
DM
PW
T
D=
1s
h
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
100
Pulse Width
PW (s)
R07DS0641EJ0300 Rev.3.00
Jan 23, 2013
Page 5 of 7
stm32/stm8
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