StrongIRFET™
IRFB7730PbF
IRFS7730PbF
IRFSL7730PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
75V
2.2m
2.6m
246A
195A
G
S
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
S
D
G
TO-220AB
IRFB7730PbF
S
G
D2Pak
IRFS7730PbF
G
S
D
TO-262
IRFSL7730PbF
G
Gate
D
Drain
S
Source
Base part number
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
IRFS7730TRLPbF
RDS(on), Drain-to -Source On Resistance (m
)
8
ID = 100A
6
T J = 125°C
4
ID, Drain Current (A)
250
Limited by package
200
150
100
2
T J = 25°C
0
4
6
8
10
12
14
16
18
20
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2014 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
January 10, 2014
Absolute Maximum Rating
IRFB/S/SL7730PbF
Units
A
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
246
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
174
Continuous Drain Current, V
GS
@ 10V (Package Limited)
195
Pulsed Drain Current
984
Maximum Power Dissipation
375
Linear Derating Factor
2.5
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol
Max.
Parameter
465
E
AS (Thermally limited)
Single Pulse Avalanche Energy
100
E
AS (tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
0.40
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient (TO-220)
R
JA
–––
62
2
Junction-to-Ambient (PCB Mount) (D Pak) *
R
JA
–––
40
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
W
W/°C
V
°C
Units
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
40
––– mV/°C Reference to 25°C, I
D
= 1mA
2.2
2.6
m V
GS
= 10V, I
D
= 100A
2.6
–––
V
GS
= 6.0V, I
D
= 50A
–––
3.7
V
V
DS
= V
GS
, I
D
= 250µA
–––
1.0
V
DS
= 75 V, V
GS
= 0V
µA
––– 150
V
DS
= 75V,V
GS
= 0V,T
J
= 125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.1
–––
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 93µH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1626A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
This value determined from sample failure population, starting T
J
=25°C, L= 93µH, R
G
= 50, I
AS
=100A,
V
GS
=10V.
Pulse drain current is limited at 780A by source bonding technology.
*
2
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
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© 2014 International Rectifier
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January 10, 2014
IRFB/S/SL7730PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
249
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
271
55
79
192
21
120
180
115
13660
1120
690
1060
1275
Typ.
–––
–––
–––
16
44
51
70
97
2.6
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=100A
407
I
D
= 100A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 100A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
246
A
984
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=100A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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© 2014 International Rectifier
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January 10, 2014
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFB/S/SL7730PbF
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
1000
BOTTOM
BOTTOM
100
100
10
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 100A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
2.0
1.6
1.2
0.8
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
V GS, Gate-to-Source Voltage (V)
0.4
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID= 100A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 60V
V DS= 38V
V DS= 15V
100000
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
250
300
350
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
January 10, 2014
1000
IRFB/S/SL7730PbF
1000
TJ = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1msec
100
Limited by
package
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
100µsec
10
10
TJ = 25°C
1
10msec
DC
V GS = 0V
1.0
0.2
0.6
1.0
1.4
1.8
2.2
V SD, Source-to-Drain Voltage (V)
0.1
10
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
6.0
95
Id = 1.0mA
5.0
90
4.0
85
Energy (µJ)
3.0
2.0
80
1.0
75
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.0
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
Fig 12.
Typical C
oss
Stored Energy
3.0
2.8
2.6
2.4
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
2.2
2.0
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
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January 10, 2014
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