Preliminary
Datasheet
RJK60S5DPN
600V - 20A - MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.150
typ. (at I
D
= 10 A, V
GS
= 10 V, Ta = 25C)
High speed switching
t
f
= 23 ns typ. (at I
D
= 10 A, V
GS
= 10 V, R
L
= 30
,
Rg = 10
,
Ta = 25C)
R07DS0952EJ0200
Rev.2.00
Jan 23, 2013
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
G
1. Gate
2. Drain
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
MOSFET dv/dt ruggedness
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Limited by Tch max.
STch = 25C, Tch
150C
Value at Tj = 25C, V
DS
480 V
Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
DNote1
I
DNote1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse) Note1
Note2
I
AP
E
ARNote2
dv/dt
Note3
Pch
Note2
ch-c
Tch
Tstg
Ratings
600
+30,
20
20
12.6
40
20
40
5
1.36
150
166.6
0.75
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
V/ns
W
C/W
C
C
R07DS0952EJ0200 Rev.2.00
Jan 23, 2013
Page 1 of 7
RJK60S5DPN
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.150
0.375
2.5
1600
2160
8.2
23
25
49
23
27
10.5
8.5
0.96
400
25
5.6
Max
—
1
±0.1
5
0.178
—
—
—
—
—
—
—
—
—
—
—
—
1.60
—
—
—
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note5
Ta = 150°C
Note5
I
D
= 10 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100kHz
I
D
= 10 A
V
GS
= 10 V
R
L
= 30
Note5
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
Note4
I
D
= 20 A
I
F
= 20 A, V
GS
= 0
Note5
I
F
= 20 A
V
GS
= 0
Note5
di
F
/dt = 100 A/s
R07DS0952EJ0200 Rev.2.00
Jan 23, 2013
Page 2 of 7
RJK60S5DPN
Preliminary
Main Characteristics
Channel Dissipation
vs.
Case
Temperature
250
100
Maximum
Safe Operation Area
Channel Dissipation Pch (W)
10
I
D
(A)
200
μ
s
P
W
10
Operation
in
this area
is limited by
R
DS(on)
1
=
10
150
0
μ
s
100
50
Drain Current
0
0
25
50
75
100 125 150 175
0.1
1
Tc =
25°C
1
shot
10
100
1000
Case
Temperature Tc
(°C)
Drain to Source
Voltage
V
DS
(V)
Typical
Output Characteristics
40
Ta =
25°C
Pulse
Test
Typical
Output Characteristics
30
Ta =
125°C
Pulse
Test
I
D
(A)
30
I
D
(A)
8V
10
V
15
V
7V
8V
10
V
15
V
7 V 6.5 V
25
20
6.5 V
20
Drain Current
Drain Current
6V
15
10
5
0
6V
10
5.5 V
V
GS
= 5 V
V
GS
= 5.5 V
0
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source
Voltage
V
DS
(V)
Drain to Source
Voltage
V
DS
(V)
Typical Transfer
Characteristics
V
DS
=
10
V
Pulse
Test
Static Drain to Source on State Resistance
vs.
Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
100
Drain Current
I
D
(A)
10
Ta =
125°C
25°C
0.1
1
Ta = 75°C
25°C
0.1
−25°C
V
GS
=
10
V
Pulse
Test
0.01
1
10
100
0.01
0
2
4
6
8
10
Gate to Source
Voltage V
GS
(V)
Drain Current
I
D
(A)
R07DS0952EJ0200 Rev.2.00
Jan 23, 2013
Page 3 of 7
RJK60S5DPN
Static Drain to Source on State Resistance
vs. Temperature
(Typical)
0.5
Preliminary
Body-Drain Diode Reverse
Recovery
Time
(Typical)
Reverse Recovery
Time
trr (ns)
1000
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
V
GS
=
10
V
Pulse
Test
0.4
0.3
I
D
=
20 A
100
0.2
5
A
0.1
10 A
di/dt
=
100 A/μs
V
GS
=
0,
Ta =
25°C
10
1
10
100
0
−25
0
25
50
75
100 125 150
Case
Temperature
Tc
(°C)
Reverse Drain Current
I
DR
(A)
Typical
Capacitance
vs.
Drain to Source
Voltage
100000
10000
V
GS
=
0
f =
100 kHz
Ta =
25°C
Ciss
4
C
OSS
Stored
Energy
(Typical)
Capacitance C (pF)
3
100
10
Coss
E
OSS
(μJ)
1000
2
Crss
1
0.1
0
50
100
150
200
250
300
1
0
0
50
100
150
200
250
300
Drain to Source
Voltage
V
DS
(V)
Drain to Source
Voltage
V
DS
(V)
Dynamic
Input
Characteristics (Typical)
V
DS
(V)
I
DR
(A)
V
GS
600
V
DS
400
V
DD
= 480 V
300
V
100
V
12
Reverse Drain Current
vs.
Source to Drain
Voltage
(Typical)
V
GS
(V)
100
800
16
Ta =
125°C
10
25°C
Drain to Source
Voltage
Gate to Source
Voltage
8
Reverse Drain Current
1
V
GS
=
0
Pulse
Test
0.1
0
0.4
0.8
1.2
1.6
200
V
DD
= 480 V
300
V
100
V
20
40
4
I
D
=
20 A
Ta =
25°C
60
80
0
0
0
Gate Charge
Qg
(nC)
Source to Drain
Voltage
V
SD
(V)
R07DS0952EJ0200 Rev.2.00
Jan 23, 2013
Page 4 of 7
RJK60S5DPN
Gate to Source Cutoff
Voltage
vs.
Case
Temperature
(Typical)
Drain to Source Breakdown
Voltage
V
(BR)DSS
(V)
6
800
Preliminary
Drain to Source Breakdown
Voltage
vs.
Case
Temperature
(Typical)
Gate to Source Cutoff
Voltage
V
GS(off)
(V)
5
I
D
=
10 mA
4
3
2
1
V
DS
=
10
V
0
−25
0
25
1 mA
0.1 mA
700
600
500
I
D
=
10 mA
V
GS
=
0
400
−25
0
25
50
75
100 125 150
50
75
100 125 150
Case
Temperature
Tc
(°C)
Case
Temperature
Tc
(°C)
Maximum
Avalanche
Energy vs.
Channel
Temperature
Derating
Repetitive Avalanche
Energy E
AR
(mJ)
1.6
V
DD
= 50 V
Rg
≥
100
Ω
1.2
0.8
0.4
0
25
50
75
100
125
150
Channel
Temperature
Tch
(°C)
R07DS0952EJ0200 Rev.2.00
Jan 23, 2013
Page 5 of 7
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