Preliminary
Datasheet
RJK1560DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Capable of 2.5 V gate drive
Low on-resistance
R
DS(on)
= 0.043
typ. (at I
D
= 10 A, V
GS
= 4 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0270EJ0100
Rev.1.00
Mar 07, 2011
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
AP Note3
E
AR Note3
Pch
Note2
ch-c
Tch
Tstg
Ratings
150
±10
20
80
20
80
16
19.2
28.5
4.38
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0270EJ0100 Rev.1.00
Mar 07, 2011
Page 1 of 6
RJK1560DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
150
10
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.043
0.044
6720
205
102
43
79
250
117
52
13
14
0.83
75
Max
—
—
1
10
1.5
0.060
0.070
—
—
—
—
—
—
—
—
—
—
1.30
—
Unit
V
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
100 A,
V
DS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
10
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 4 V
Note4
I
D
= 10 A, V
GS
= 2.5 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 10 A
V
GS
= 4 V
R
L
= 7.5
Rg = 10
V
DD
= 120 V
V
GS
= 4 V
I
D
= 20 A
I
F
= 20 A, V
GS
= 0
Note4
I
F
= 20 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0270EJ0100 Rev.1.00
Mar 07, 2011
Page 2 of 6
RJK1560DPP-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
80
Ta = 25°C
Pulse Test
Typical Output Characteristics
3 V, 5 V
2V
Drain Current I
D
(A)
μ
s
Drain Current I
D
(A)
100
10
60
10 V
1.9 V
PW
10
=1
μ
s
00
Operation in this
area is limited by
R
DS(on)
40
1.8 V
1
0.1
Tc = 25°C
1 shot
0.01
0.1
1
20
1.7 V
V
GS
= 1.6 V
10
100
1000
0
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
Ta = 25°C
Pulse Test
V
GS
= 2.5 V
0.1
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
Tc = 75°C
1
25°C
−25°C
0.1
4V
0.01
0
0.4
0.8
1.2
1.6
2.0
0.01
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
0.16
V
GS
= 4 V
Pulse Test
0.12
I
D
= 20 A
0.08
10 A
0.04
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.16
V
GS
= 2.5 V
Pulse Test
0.12
I
D
= 20 A
0.08
10 A
0.04
0
-25
0
25
50
75
100 125 150
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
R07DS0270EJ0100 Rev.1.00
Mar 07, 2011
Page 3 of 6
RJK1560DPP-M0
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Capacitance C (pF)
1000
100
Coss
100
V
GS
= 0
f = 1 MHz
Ta = 25°C
10
0
20
40
Crss
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
1000
60
80
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Voltage V
GS
(V)
80
Dynamic Input Characteristics (Typical)
Drain to Source Voltage V
DS
(V)
160
Reverse Drain Current I
DR
(A)
I
D
= 20 A
Ta = 25
°C
V
DS
V
GS
V
DD
= 120 V
60 V
30 V
16
120
12
60
V
GS
= 0
Ta = 25
°C
Pulse Test
80
8
40
40
V
DD
= 120 V
60 V
30 V
0
50
100
150
200
4
20
0
0
250
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
2.0
V
DS
= 10 V
1.6
I
D
= 10 mA
1.2
1 mA
0.1 mA
0.8
0.4
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
R07DS0270EJ0100 Rev.1.00
Mar 07, 2011
Page 4 of 6
RJK1560DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
Preliminary
0.2
0.1
0.1
0.05
0.02
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.38°C/W, Tc = 25°C
P
DM
p
ot
uls
e
D=
PW
T
0.03
PW
T
0.0
1
h
1s
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 75 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0270EJ0100 Rev.1.00
Mar 07, 2011
Page 5 of 6
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