Bulletin I2117
25TTS..S SERIES
SURFACE MOUNTABLE
PHASE CONTROL SCR
Description/Features
The 25TTS..S new series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
V
T
I
TSM
< 1.25V @ 16A
= 250A
V
R
/ V
D
= 1200V
Output Current in Typical Applications
Applications
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
thCA
= 15°C/W
Aluminum IMS with heatsink, R
thCA
= 5°C/W
T
A
= 55°C, T
J
= 125°C, footprint 300mm
2
Single-phase Bridge
3.5
8.5
16.5
Three-phase Bridge Units
5.5
13.5
25.0
A
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
@ 16 A, T
J
= 25°C
25
800 and 1200
250
1.25
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
25TTS..S
16
Units
A
D
2
PAK (SMD-220)
1
25TTS.. S Series
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
800
1200
V
DRM
, maximum
peak direct voltage
V
800
1200
I
RRM
/
I
DRM
125°C
mA
5
25TTS08S
25TTS12S
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
RMS
Max. RMS On-state Current
I
TSM
Max. Peak One Cycle Non-Repetitive
Surge Current
I
2
t
Max. I
2
t for fusing
25TTS..S
16
25
210
250
220
310
Units
A
Conditions
50% duty cycle @ T
C
= 94° C, sinusoidal wave form
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
√s
V
mΩ
V
mA
T
J
= 25 °C
T
J
= 125 °C
mA
mA
V/µs
A/µs
V
R
= rated V
RRM
/ V
DRM
t = 0.1 to 10ms, no voltage reapplied
@ 16A, T
J
= 25°C
T
J
= 125°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
3100
1.25
12.0
1.0
0.5
5.0
100
200
500
150
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
I
L
Max. Holding Current
Max. Latching Current
Anode Supply = 6V, Resistive load, Initial I
T
=1A
Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage
di/dt
Max. rate of rise of turned-on Current
2
25TTS.. S Series
Triggering
Parameters
P
GM
Max. peak Gate Power
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
25TTS..S
8.0
2.0
1.5
10
60
45
20
Units
W
Conditions
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. required DC Gate Voltage
to trigger
2.5
2.0
1.0
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.25
2.0
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
25TTS..S
0.9
4
110
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
Soldering Temperature
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
wt
T
Approximate Weight
Case Style
2 (0.07)
g (oz.)
D
2
Pak (SMD-220)
25TTS..S
- 40 to 125
- 40 to 125
240
1.1
40
Units
°C
°C
°C
°C/W
°C/W
Conditions
for 10 seconds (1.6mm from case)
DC operation
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
3
25TTS.. S Series
Maximum Allowable Case Temperature (°C)
125
120
115
C on d uction An g le
Maximum Allowable Case Temperature (°C)
25TTS.. Series
R
t hJ C
(DC) = 1.1 K/W
125
120
115
110
105
100
95
90
85
0
5
30°
60°
25TTS.. Series
R
thJC
(DC) = 1.1 K/W
110
105
30°
100
95
90
60°
90°
120°
0
2
4
6
8
10
12
180°
16
18
Conduction Period
90°
120°
10
15
180°
20
DC
25
30
14
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
30
25
20
15
10
5
0
35
30
25
20
Fig. 2 - Current Rating Characteristics
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
15 RMS Limit
10
5
0
Conduction Period
25TTS..
T = 125°C
J
25TTS..
T = 125°C
J
0
5
10
15
20
0
5
10
15
20
25
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
230
210
190
170
150
130
110
90
25TTS..Series
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Fig. 4 - On-state Power Loss Characteristics
270
250
230
210
190
170
150
130
110
90
70
0.01
25TTS.. Series
0.1
1
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
1
10
100
Number Of Eq ua l Amplitude Ha lf Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
4
25TTS.. S Series
1000
Instantaneous On-state Current (A)
100
10
T = 25°C
T
J
= 125°C
25TTS.. Series
J
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
Instan taneous Gate Voltage (V)
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1)
(2)
(3)
(4)
(a)
PGM = 40 , tp = 1 ms
PGM = 20 W, tp = 2 ms
PGM = 8 W, tp = 5 ms
PGM = 4 W, tp = 10 ms
10
(b)
TJ = -10 °C
TJ = 25 °C
T J = 1 25 °C
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
25TTS..
0.1
1
Frequency Limited by PG(AV)
10
10 0
Instantaneous Gate Curren t (A)
Fig. 8 - Gate Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady State Value
(DC Operation)
1
0.1
Single Pulse
25TTS.. Series
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
5
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