IRF634S, SiHF634S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
41
6.5
22
Single
250
0.45
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
D
2
PAK (TO-263)
K
G
D
G
S
N-Channel MOSFET
S
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
D
2
PAK (TO-263)
SiHF634STRR-GE3
a
IRF634STRRPbF
a
SiHF634STR-E3
a
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation
D
2
PAK (TO-263)
SiHF634S-GE3
IRF634SPbF
SiHF634S-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
250
± 20
8.1
5.1
32
0.59
0.025
300
8.1
7.4
74
3.1
4.8
- 55 to + 150
300
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
Avalanche Current
I
AR
a
Repetitive Avalanche Energy
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
Peak Diode Recovery dV/dt
c
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 7.3 mH, R
g
= 25
,
I
AS
= 8.1 A (see fig. 12).
c. I
SD
8.1 A, dI/dt
120 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91035
S11-1047-Rev. C, 30-May-11
W/°C
mJ
A
mJ
W
V/ns
°C
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF634S, SiHF634S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
TYP.
-
-
-
MAX.
62
40
1.7
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 5.1 A
b
V
DS
= 50 V, I
D
= 5.1 A
b
250
-
2.0
-
-
-
-
1.6
-
0.37
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.45
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
770
190
52
-
-
-
9.6
21
42
19
4.5
7.5
-
-
-
41
6.5
22
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 5.6 A, V
DS
= 200 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 125 V, I
D
= 5.6 A,
R
g
= 12
,
R
D
= 22
,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
220
1.2
8.1
A
32
2.0
440
2.4
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 8.1 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 5.6 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91035
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF634S, SiHF634S
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
I
D
, Drain Current (A)
10
1
I
D
, Drain Current (A)
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
10
1
150
°
C
10
0
25
°
C
10
0
4.5 V
20 µs Pulse Width
T
C
=
25 °C
10
-1
10
0
10
1
10
-1
4
91035_03
20 µs Pulse Width
V
DS
=
50 V
5
6
7
8
9
10
91035_01
V
DS
, Drain-to-Source Voltage (V)
V
GS,
Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (A)
10
1
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 5.6 A
V
GS
= 10 V
4.5 V
10
0
20 µs Pulse Width
T
C
=
150 °C
10
0
91035_02
10
1
91035_04
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
DS,
Drain-to-Source Voltage (V)
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91035
S11-1047-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF634S, SiHF634S
Vishay Siliconix
1750
I
SD
, Reverse Drain Current (A)
1400
Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
1
1050
150
°
C
700
C
oss
C
rss
10
0
25
°
C
350
0
10
0
91035_05
10
1
10
-1
0.4
91035_07
V
GS
= 0 V
0.6
0.8
1.0
1.2
V
DS,
Drain-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
10
3
I
D
= 5.6 A
5
2
V
GS
, Gate-to-Source Voltage (V)
Operation in this area limited
by R
DS(on)
I
D
, Drain Current (A)
16
V
DS
= 200 V
V
DS
= 125 V
10
2
5
2
12
V
DS
= 50 V
10
µs
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
10
5
2
8
1
5
2
4
For test circuit
see figure 13
0
0
91035_06
0.1
10
2
5
10
20
30
40
50
91035_08
10
2
2
5
10
3
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91035
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF634S, SiHF634S
Vishay Siliconix
V
DS
10
V
GS
R
g
R
D
D.U.T.
+
- V
DD
I
D
, Drain Current (A)
8
6
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
4
Fig. 10a - Switching Time Test Circuit
2
V
DS
25
50
75
100
125
150
90 %
0
91035_09
T
C
, Case Temperature (°C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
0
−
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
0.1
1
10
0.1
10
-2
10
-5
91035_11
10
-4
10
-3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91035
S11-1047-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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