REVISIONS
LTR
A
B
DESCRIPTION
Changes in accordance with NOR 5962-R216-92.
Updated drawing to current requirements. Editorial changes throughout. - gap
DATE (YR-MO-DA)
92-06-22
01-04-04
APPROVED
Michael A. Frye
Raymond Monnin
THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
Kenneth S. Rice
B
1
B
2
B
3
B
4
B
5
B
6
B
7
B
8
B
9
B
10
B
11
B
12
B
13
B
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
Charles Reusing
APPROVED BY
Charles Reusing
DRAWING APPROVAL DATE
88-08-04
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
MICROCIRCUITS, DIGITAL, CMOS, 64K X 4 SRAM
(LOW POWER), MONOLITHIC SILICON
AMSC N/A
REVISION LEVEL
B
SIZE
A
SHEET
CAGE CODE
67268
1 OF
14
5962-88545
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E288-01
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example:
5962-88545
01
L
X
Drawing number
Device type
(see 1.2.1)
Case outline
(see 1.2.2)
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
Generic number
5C256L4
5C256L4
5C256L4
5C256L4
Circuit function
64K X 4 low power CMOS SRAM
64K X 4 low power CMOS SRAM
64K X 4 low power CMOS SRAM
64K X 4 low power CMOS SRAM
Access time
35 ns
45 ns
55 ns
70 ns
1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
L
X
Y
Descriptive designator
GDIP3-T24 or CDIP4-T24
CQCC3-N28
CDFP4-F28
Terminals
24
28
28
Package style
Dual-in-line
Rectangular leadless chip carrier
Flat package
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Voltage on any input relative to V
SS
..............................................................................
Voltage applied to outputs ............................................................................................
Storage temperature range ...........................................................................................
Maximum power dissipation (P
D
) ..................................................................................
Lead temperature (soldering, 10 seconds) ...................................................................
Thermal resistance, junction-to-case (
JC
) ....................................................................
Junction temperature (T
J
) .............................................................................................
1.4 Recommended operating conditions.
Supply voltage (V
CC
) .....................................................................................................
Supply voltage (V
SS
) .....................................................................................................
Input high voltage (V
IH
) .................................................................................................
Input low voltage (V
IL
) ...................................................................................................
Case operating temperature range (T
C
) ........................................................................
4.5 V dc to 5.5 V dc
0 V dc
2.2 V dc to V
CC
+0.5 V dc
-0.5 V dc to +0.8 V dc 2/
-55
C to +125
C
-0.5 V dc to +7.0 V dc
-0.5 V dc to +6.0 V dc
-65
C to +150
C
1.0 W
+260
C
See MIL-STD-1835
+150
C 1/
_______
1/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in
accordance with method 5004 of MIL-STD-883.
2/ V
IL
minimum = -3.0 V dc for pulse width less than 20 ns.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88545
SHEET
B
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed
in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in
the solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 -- Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 -
MIL-STD-1835 -
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-
JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer
Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-
PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying
activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan
may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device.
These modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-
PRF-38535 is required to identify when the QML flow option is used
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535, appendix A and herein.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88545
SHEET
B
3
3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection
only. Each coated microcircuit inspection lot (see inspection lot as defined in MIL-PRF-38535) shall be subjected to and pass
the internal moisture content test at 5000 ppm (see test method 1018 of MIL-STD-883). The frequency of the internal water
vapor testing shall not be decreased unless approved by the preparing activity. Samples may be pulled anytime after seal.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN
listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103 (see 6.6 herein). For
packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device.
3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance
to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a "Q" or "QML" certification mark in
accordance with MIL-PRF-38535 to identify when the QML flow option is used.
3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an
approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to
listing as an approved source of supply shall affirm that the manufacturer's product meets the requirements of MIL-PRF-
38535, appendix A and the requirements herein.
3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided
with each lot of microcircuits delivered to this drawing.
3.8 Notification of change. Notification of change to DSCC-VA shall be required in accordance with MIL-PRF-38535,
appendix A.
3.9 Verification and review. DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's
facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the
reviewer.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88545
SHEET
B
4
TABLE I. Electrical performance characteristics.
Conditions
-55
C
T
C
+125
C
V
CC
= 4.5 V to 5.5 V
V
SS
= 0 V
unless otherwise specified
t
AVAV
= t
AVAV
(minimum),
V
CC
= 5.5 V, CE = V
IL
,
all other inputs at V
IL
I
CC2
CE
Test
Symbol
Group A
subgroups
Device
type
Min
Limits
Unit
Operating supply current
1/
Standby power supply
current, TTL
1/
I
CC1
1, 2, 3
All
Max
100
mA
V
IH
, all other inputs
1, 2, 3
All
25
mA
V
IL
or
V
IH
, V
CC
= 5.5 V,
f = 0 MHz
I
CC3
CE
(V
CC
-0.2 V), f = 0 MHz,
V
CC
= 5.5 V, all other inputs
0.2 V or
(V
CC
-0.2 V)
V
CC
= 2.0 V
V
CC
= 5.5 V,
V
IN
= 0 V to 5.5 V
V
CC
= 5.5 V,
V
IN
= 0 V to 5.5 V
V
IN
0.2 V or
(V
CC
- 0.2 V),
CE
Standby power supply
current, CMOS 1/
Data retention current 1/
Input leakage current,
any input
Off-state output leakage
current
Data retention voltage
Output high voltage
Output low voltage
Input capacitance
1, 2, 3
All
3
mA
I
CC4
I
ILK
I
OLK
V
DR
V
OH
V
OL
C
IN
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
4
All
All
All
All
All
All
All
2.0
2.4
900
10
10
A
A
A
V
V
0.4
10.0
V
pF
(V
CC
- 0.2 V)
Output capacitance
C
OUT
I
OUT
= -4.0 mA, V
CC
= 4.5 V,
V
IL
= 0.8 V, V
IH
= 2.2 V
I
OUT
= 8.0 mA, V
CC
= 4.5 V,
V
IL
= 0.8 V, V
IH
= 2.2 V
V
IN
= 0 V
f = 1.0 MHz, T
C
= +25
C,
See 4.3.1c
V
IN
= 0 V
f = 1.0 MHz, T
C
= +25
C,
See 4.3.1c
4
All
12.0
pF
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88545
SHEET
B
5
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